2N3702 |yrouszh 2N/'3706 MPS 3702 through MPS 3706 PNP . NPN SILICON GENERAL PURPOSE AF TRANSISTORS CASE TO-92B TRANSISTORS FOR GENERAL PURPOSE AF MEDIUM POWER APPLICATIONS. THE 2N3702 SERIES ARE SUPPLIED IN { THR ABOVE TYPES ARE SILICON PLANAR EPITAXIAL CASE TO-92A CASE TO-92B. THE MPS3702 SERIES ARE SUPPLIED IN CASE TO-92A. ~ a enor (PNP) ce) NPN NPN aOR ABSOLUTE MAXIMUM RATINGS 2N/MPS3702 2N/MPS3703 2N/MPS3705 2N/MPS3706 Collector-Base Voltage VoBo 40V 50V 50V 40V Collector-Emnitter Voltage Voro 25V 30V 30V 20V Emitter-Base Voltage VEBO 5V 5V 5V 5V Collector Current Te 0.2A 0.2A 0.84 0.8A Collector Peak Current IcM 0.6A 0.64 ~ 2 Total Power Dissipation (Te<250C) Ptot 1w o~ (Ta < 250C) 360mW Operating Junction & Storage Tj. Tstg -55 to 150C Temperature ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) " PARAMETER SYMBOL MIN TYP MAX |UNIT| TEST CONDITIONS | Collector-Base Breakdown Voltage BYCBO f v I=0.lmaA Ip=0 Collector-Emitter Breakdown Voltage | LVggo [Note 1 Vv I=lOmA pee Emitter-Base Breakdown Voltage BVEBO } Vv Ip=0.1mA Te=0 Collector Cutoff Current IcBo 100 | nA Vop=20V. Ip=0 Emitter Cuteff Current IEBO 100 | nA VeR=3V = Ic=0 Collector-Emitter Saturation Voltage] Vcen(sat)* 2N/MPS3702, 3 O.1 0.25) V Ic=50mA IB=5mA | 2n/MPS3704 0.12 0.6 | V Ig=100mA Ip=5mA ~ 2N/MPS3705 0.15 0.8 | V Tc=100mA Ip=SmA | 2N/MPS3706 0.15 1{v Iq=100mA Ip=5mA | Base-Emitter Voltage VBR #* a 2n/MPS3702 , 3 0.6 0.78 1|V I=50mA VgE=5V 2n/MPS3704, 5,6 0.5 0.83 1/7 Ig=100mA Vog=2V ~~ |D.C. Current Gain | Ere * oN | sp 2n/MPS3702 60 300 Ic=50mA Vog=5V 2n/MPS3703 30 150 Tg=50mA Vor=5V 2n/MPS3704 100 300 Tc=50mA VCER=2V For p-n-p devices, voltage and current values are negative. 0, KWUN TONG, HONG KONG, TELEX fasio MICRO ELECTR ONICS LTD. area BOX(9477 CABLE ADDRESS MICROTRON" | TELEP . -3-8933-63;3-002423- . FAX: 3-410321 He : - - - Continued - - - PARAMETER SYMBOL | MIN TYP MAX |UNIT| TEST CONDITIONS D.C. Current Gain 2n/MPS3705 Ere * 50 150 To=50mA VcH=2V 2N/MPS3706 30 600 T=50mA vor-20 5 Current Gain-Bandwidth Product fm ob 7 2N/MPS3702, 3 100 MHz| IC=50mA VoR=5V 2n/MPS3704,5,6 100 MHz| Ic=50mA Von=2V Gollector-Base Capacitance Cob 2N/MPS3702,3 5 12 | pF | Vcp=l0V IE=0 2N/MPS3704,5,6 4 12 | pP| f=1MHz Note 1: * Pulse Test : Pulse Width=0.4mS, Duty Cycle=1% equal to the values of absolute maximum ratings. TYPICAL CHARACTERISTICS (Pa=250C unless otherwise noted) Prot vs Ta | Hpp (NORMALIZED) ve Ic 400 2.0 Tone > 1.6 300 \ eB ri 21.2 P \ tot 45 5 = 0.8 (mw) _ . \ E ~ 100 X 0.4 \ 00 0 50 100 150 200 1 10 1 is? 10 Ta (C) | 0 Vez & Vou(sat) vs Ic 250 fp vs Ic 2s Pulse Test 1.6 200 1.2 fp 150 vour (wz) | 0.8 100 0.4 50 0 1 10 ~100 1000 1 10 100 , 1000 Ic (mA) I (mA) . * 2.78.0650B.6500B- a nnn oe En: . THE FOLLOWING TRANSISTORS, WHICH ARE CLOSELY EQUIVALENT TO THE 2n/MPS3702 TRANSISTORS EQUIVALENT TO 2N/MPS3702 FAMILY 10-928 TO-92A WITH X-67 HEAT SINK -~ FAMILY, ARE ALSO AVAILABLE. : GS | - N : ~~ lt ed : i Smm AD. de ECB EBC _ SPECIFICATIONS AT Ta=25C For p-n-p devices, voltage and current values are negative. . cype |potartty| CASE |LVcEO|BVEBO}ICBO @ VCB Hre @ Ic/VcE Wex(sat) @ Ic/tBlfr @ Ig (Ptot) | (Vv) | Cv) f@a) (ma) (Vv) { (V)__GA) (ma) | (uttz ) (ma) min | min | max min-max max min 2N3402 25] 5 1 0.1 @ 25 | 75-225 @ 2/4.5] 0.3 @ 50/3 - 2N3403 with 67 25 | 5 | 0.1 @ 25 180-540 @ 2/4.5| 0.3 @ 50/3 onzaog| PN |ueat sink} 50] 5 | 0.1 @ 50 | 75-225 @ 2/4.5| 0.3 @ 50/3 2N3405 (560mW) 50} 5 | 0.1 @ 50 4180-540 @ 2/4.5] 0.3 @ 50/3 2N4425 40 5 {#0.03@ 40 [180-540 @ 2/4.5].0.3. @ 50/5 | "8 2N3414 25 | 5 | Ol @ 25 | 75-225 @ 2/4.5] 0.3 @ 50/3 2N3415| pw TO-92B 251 5 | 0.1 @ 25 J180-540 @ 2/4,51 0.3 @ 50/3 2N3416 (360mw) 50 5 0.1 @ 50 | 75-225 @ 2/4.5] 0,3. @ 50/3 (2N3417 50! 5 | 0.2 @ 50 |180-540 @ 2/4.5| 0.3 .@ 50/3 724424 40 5 -}*0.03@ 40 [180-540 @ .2/4.540.3@ 50/3 F.-Y 2N5220| NPN 15] 3 | 0.110 | Se 609 20/18 0.5 @150/15 | 100 @ 20 . : 25- @ 10/10 2N52211 PNP 15} 3 | 0.1 @10 0.5 @ 150/15 10-924 30-600 @ 50/10 . (350mW) - 2n5225| NEN "| 95] 4 | 0.3 @15 25" 1 @ te Ay | On8 @ 100/10 2N5226| PNP 25, 4 | 0.315] 2 co @ we 0.8 @ 100/10 2N5354) PNP 25] 4 |#*0.1 @ 25 arte C is TO-92B 100-300 @ 50/1 | 0.25 @ 50/2.5 2N5355) PNP | (360mW) 25} 4 J*O.1 @ 25 Fyo @ 300/5]}1.0 @ 300/30 2ns356| uP 25 | 4 [r0.1 0 25 [7207500 @ 50/2, uaa 0-120 @ 50/1 | [215365 PNP 40 4 [6.1 @ 40 tO 8 Oe: ~ 10-928 1 0.25 @ 50 725366] pee | (360mm) J}. 40]. 4. Jx0-2.040 200-500. 30/0, | ro ge 6 ef ; 250-500 @ 50/1 J2N5367| PNP. AOE. eaee ons | oR 00B.0650B 2.78.65 2n/MPS3702 FAMILY - =~ Continued - - - nm case | tvcro|BvEBo|IoRs @ VoE| Erg @ Ic/Vce |Vcx(sat) @ I/IB | fr @ Ic (Ptot) | (Vv) | Cv) [@A) _ W) (mA) (V) (v) (mA) (ma)| (Mz) (ma) min min max min-max max min TYPE {POLARITY 40-120 @ 50/1 2N5418| NPN 25 | 4 | O-1@ 25 | 50. @ 3500/5 TO-92B 0.25 @ 50/2.5 100-300 @ 50/1 25419} FPN | (goomyy| 25 | 4 | 0-2 25 | go." @ 5300/5] 1.0 @ 300/30 2N54201 NPN 25 | 4 | 0.1 @ 25 aed 5 2N5447] PNP 2N5448] PNP These are TO-92F transistors. Thir electrical 2N5449 NPN characteristics are exactly identical to 2N3702, 3, 4, 5, 6 respectively. 2N5450| NPN ON5451| NPN 2.78.6500B.0650B