DPAK
DPAK Ñ N-Channel
V
(BR)DSS
R
DS(on)
I
D
P
D
1
Mfr.Õs I
D
(V) (½) @ (Cont.) (W)
Type
4
(A)
Min. Max. (A) Max.
MTD10N10EL 100 0.2200 5.00 10.0 1.75
MTD20N06HD 60 0.0450 10.00 20.0 1.75
MTD20N06HDL
2
60 0.0450 10.00 20.0 1.75
MTD20N03HDL
2
30 0.0350 10.00 20.0 1.75
3
TO-220AB
TO-220AB Ñ N-Channel
MTP1N100E 1000 9.0000 0.50 1.0 75.00
MTP3N100E 1000 4.0000 1.50 3.0 125.00
MTP4N80E 800 3.0000 2.00 4.0 125.00
MTP1N60E 600 8.0000 0.50 1.0 50.00
MTP3N60E 600 2.2000 1.50 3.0 75.00
MTP6N60E 600 1.2000 3.00 6.0 125.00
MTP2N50E 500 3.6000 1.00 2.0 75.00
MTP8N50E 500 0.8000 4.00 8.0 125.00
MTP5N40E 400 1.0000 2.50 5.0 75.00
MTP10N40E 400 0.5500 5.00 10.0 125.00
MTP20N20E 200 0.1600 10.00 20.0 125.00
MTP10N10E 100 0.2500 5.00 10.0 75.00
MTP12N10E 100 0.1600 6.00 12.0 75.00
MTP33N10E 100 0.0600 16.50 33.0 150.00
MTP52N06V 60 0.0240 26.00 52.0 135.00
MTP60N06HD 60 0.0140 30.00 60.0 150.00
MTP75N06HD 60 0.0100 37.50 75.0 150.00
MTP75N05HD 50 0.0095 37.50 75.0 150.00
MTP75N03HDL
2
30 0.0075 37.50 75.0 150.00
TO-220AB Ñ P-Channel
MTP6P20E 200 1.0000 3.00 6.0 75.00
MTP12P10 100 0.3000 6.00 12.0 88.00
MTP50P03HDL
2
30 0.0250 25.00 50.0 150.00
1
TC=25¡C.
2
Indicates Logic Level.
3
Power rating when mounted on an FR-4 glass epoxy printed circuit board with the
minimum recommended footprint.
4
Available in tape and reel Ñ add T4 suffix to Part Number.
5
ESD protected to 4 KV.
Field Effect Transistors and Power TMOS
¨
MOSFETs
Check Pricing And Availability Of All Items On The Internet At www.alliedelec.com ALLIED
c
847
Field Effect Transistors
JFETs
JFETs operate in the depletion mode. They are available in both P- and N-channel and are
offered in both Through-hole and Surface Mount Packages. Applications include general-
purpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are
economical and very rugged. The drain and source are interchangeable on many typical FETs.
JFET Low-Frequency/Low-Noise (Case 29-04 Ñ TO-226AA (TO-92) Ñ N-Channel)
The following table is a listing of small-signal JFETs intended for low-noise applications in the
audio range. These devices exhibit good linearity and are candidates for hi-fi and instrumentation
equipment.
Mfr.Õs
Type
R
e
Y
fs
@ f
mmho
Min. (kHz)
R
e
Y
os
@ f
µmho
Max. (kHz)
V
(BR)GSS
C
iss
C
rss
V
(BR)GDO
(pF) (pF) (V)
Max. Min. Min.
V
GS(off)
(V)
I
DSS
(mA)
Min. Max. Min. Max.
Style
2N5458 1.5 1.0 50 1.0 7.0 3.0 25 1.00 7.0 2.0 9.0 5
2N5457 1.0 1.0 50 1.0 7.0 3.0 25 0.50 6.0 1.0 5.0 5
JFET Low-Frequency/Low-Noise (Case 29-04 Ñ TO-226AA (TO-92) Ñ P-Channel)
2N5460 1.0 1.0 75 1.0 7.0 2.0 40 0.75 6.0 1.0 5.0 7
2N5461 1.5 1.0 75 1.0 7.0 2.0 40 1.00 7.5 2.0 9.0 7
2N5462 2.0 1.0 75 1.0 7.0 2.0 40 1.80 9.0 4.0 16.0 7
Mfr.Õs
Type
R
e
Y
fs
@ f
mmho
Min. (MHz)
R
e
Y
os
@ f
µmho
Max. (MHz)
NF @ RG=1 K
dB
Max.
f
(MHz)
C
iss
C
rss
(pF) (pF)
Max. Min.
V
GS(off)
(V)
I
DSS
(mA)
Min. Max. Min. Max.
Style
2N5485 3.0 400 100 400 5.0 1.0 4.0 400 25 0.5 4.0 4.0 10.0 5
2N5486 3.5 400 100 400 5.0 1.0 4.0 400 25 2.0 6.0 8.0 20.0 5
J309 12
1
100 250
1
100 7.5 2.5 1.5
1
100 25 1.0 4.0 12 30.0 5
J310 12
1
100 250
1
100 7.5 2.5 1.5
1
100 25 2.0 6.5 24 60.0 5
1
Typical.
JFET High-Frequency Amplifiers (Case 29-04 Ñ TO-226AA (TO-92) Ñ N-Channel)
The following is a listing of small signal JFETs that are intended for hi-frequency applications. These are candidates for
VHF/UHF oscillators, mixers and front-end amplifiers.
V
(BR)GSS
V
(BR)GDO
(V)
Min.
Field Effect Transistors
TMOS MOSFETs
Mfr.Õs
Type
R
DS(on)
@ ID
½
Max. (A)
V
GS(th)
(V)
Min. Max.
V(
BR)DSS
C
iss
C
rss
t
on
t
off
(V) (pF) (pF) (ns) (ns) Style
Min. Max. Max. Max. Max.
MPF960 1.7 1.00 1.0 3.5 60 70
1
20.0
1
15.0 15.0 22
TMOS Switches and Choppers (Case 29-04 Ñ TO-226AA (TO-92) Ñ N-Channel)
2N7000 5.0 0.50 0.8 3.0 60 60 5.0 10.0 10.0 22
BS170 5.0 0.20 0.8 3.0 60 25
1
3.0
1
10.0 10.0 30
BS107A 6.4 0.25 1.0 3.0 200 60
1
6.0
1
15.0 15.0 30
VN2222LL 7.5 0.50 0.6 2.5 60 60 5.0 10.0 10.0 22
BS107 14.0 0.20 1.0 3.0 200 60
1
6.0
1
15.0 15.0 30
1
Typical.
TMOS Switches and Choppers (Case 29-05 Ñ TO-226AE (1-WATT TO-92) Ñ N-Channel)
The following is a listing of small-signal TMOS devices that are intended for switching and chopper applications. These
devices offer low R
DS(on)
characteristics.
Field Effect Transistors
Surface Mount FETs
Mfr.Õs Marking
Type
NF
dB
Typ.
f
(MHz)
Y
fs
@ V
DS
mmhos
Min.
mmhos
Max. (V) V
(BR)GSS
Style
MMBFJ309LT1 6U 1.5 450 10.0 20.0 10 25 10
MMBFJ310LT1 6T 1.5 450 8.0 18.0 10 25 10
MMBFU310LT1 M6C 1.5 450 10.0 18.0 10 25 10
MMBF4416LT1 M6A 2.0
1
100 4.5 7.5 15 30 10
1
Max.
R
DS(on)
t
off
Mfr.Õs Marking (½) ns V
(BR)GSS
Type Max. Max.
I
DSS
(mA)
Min.
(mA)
Max.
V
GS(off)
(V)
Min.
(V)
Max.
Style
MMBF4393LT1 6G 100 50 30 0.5 3.0 5.0 30 10
Surface Mount Choppers/Switches JFETs
Pinout: 1 Ñ Drain, 2 Ñ Source, 3 Ñ Gate (Case 318-07 Ñ TO-236AB (SOT-23) ÑP-Channel)
MMBFJ177LT1 6Y 300 Ñ Ð30 0.8 2.5 1.5 20 10
Surface Mount Choppers/Switches JFETs
Pinout: 1 Ñ Drain, 2 Ñ Source, 3 Ñ Gate (Case 318-07 Ñ TO-236AB (SOT-23)) ÑN-Channel
The following is a listing of small-signal surface mount JFET devices intended for switching and chopper applications.
This section contains the FET plastic packages available for
surface mount applications. Most of these devices are the most
popular metal-can and insertion type parts carried over to the new
surface mount packages.
Surface Mount RF JFETs
Pinout: 1 Ñ Drain, 2 Ñ Source, 3 Ñ Gate (Case 318-07 Ñ TO-236AB (SOT-23) Ñ N-Channel)
The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications.
TMOS FETs
Pinout: 1 Ñ Gate, 2 Ñ Source, 3 Ñ Drain (Case 318-07 Ñ TO-236AB (SOT-23) Ñ N-Channel)
The following is a listing of small-signal surface mount TMOS FETs which exhibit low R
DS(on)
characteristics.
Mfr.Õs Marking
Type
Switching Time
t
on
(ns)
t
off
(ns)
V
GS(th)
(V)
Min.
(V)
Max.
R
DS(on)
@ I
D
(½) (mA) Style
BSS123LT1 SA 6.0 100 100 0.8 2.8 20 40 21
2N7002LT1 702 7.5 500 60 1.0 2.5 20 20 21
TMOS FETs
Pinout: 1 Ñ Gate, 2 Ñ Drain, 3 Ñ Source, 4 Ñ Drain (Case 318E (SOT-223) Ñ N-Channel)
The following is a listing of small-signal surface mount TMOS FETs which exhibit low R
DS(on)
characteristics.
MMFT960T1 FT960 1.7 1000 60 1.0 3.5 15 15 3
V
DSS
Mfr.Õs Marking V
(BR)GSS
Type
I
DSS
(mA)
Min.
(mA)
Max.
Yfs @ V
DS
mmhos
Min.
mmhos
Max. (V) Style
MMBF5460LT1 M6E 40 1.0 4.0 15 1.0 5.0 10
Surface Mount General-Purpose JFETs
Pinout: 1 Ñ Drain, 2 Ñ Source, 3 Ñ Gate (Case 318-07 Ñ TO-236AB (SOT-23)) Ñ P-Channel
The following table is a listing of surface mount small-signal general purpose FETs. These devices are intended for small-
signal amplification for DC, audio. and lower RF frequencies. They also have applications as oscillators and general-
purpose, low-voltage switches.
Power TMOS¨MOSFETs
ON
Semiconductor
13