Pb
RoHS
EH2525TTS-101.000M TR
EH25 25 T TS -101.000M TR
Series
RoHS Compliant (Pb-free) 5.0V 4 Pad 5mm x 7mm
Ceramic SMD HCMOS/TTL High Frequency Oscillator
Frequency Tolerance/Stability
±25ppm Maximum
Operating Temperature Range
0°C to +70°C
Duty Cycle
50 ±5(%)
Packaging Options
Tape & Reel
Nominal Frequency
101.000MHz
Pin 1 Connection
Tri-State (High Impedance)
ELECTRICAL SPECIFICATIONS
Nominal Frequency 101.000MHz
Frequency Tolerance/Stability ±25ppm Maximum (Inclusive of all conditions: Calibration Tolerance at 25°C, Frequency Stability over the
Operating Temperature Range, Supply Voltage Change, Output Load Change, First Year Aging at 25°C,
Shock, and Vibration)
Aging at 25°C ±5ppm/year Maximum
Operating Temperature Range 0°C to +70°C
Supply Voltage 5.0Vdc ±10%
Input Current 50mA Maximum (No Load)
Output Voltage Logic High (Voh) 2.4Vdc Minimum with TTL Load, Vdd-0.4Vdc Minimum with HCMOS Load (IOH= -16mA)
Output Voltage Logic Low (Vol) 0.4Vdc Maximum with TTL Load, 0.5Vdc Maximum with HCMOS Load (IOH= +16mA)
Rise/Fall Time 4nSec Maximum (Measured at 0.8Vdc to 2.0Vdc with TTL Load; Measured at 20% to 80% of waveform
with HCMOS Load)
Duty Cycle 50 ±5(%) (Measured at 50% of waveform with TTL Load or with HCMOS Load)
Load Drive Capability 5TTL Load or 15pF HCMOS Load Maximum
Output Logic Type CMOS
Pin 1 Connection Tri-State (High Impedance)
Tri-State Input Voltage (Vih and Vil) +2.2Vdc Minimum to enable output, +0.8Vdc Maximum to disable output (High Impedance), No Connect to
enable output.
Absolute Clock Jitter ±250pSec Maximum, ±100pSec Typical
One Sigma Clock Period Jitter ±50pSec Maximum, ±30pSec Typical
Start Up Time 10mSec Maximum
Storage Temperature Range -55°C to +125°C
ENVIRONMENTAL & MECHANICAL SPECIFICATIONS
ESD Susceptibility MIL-STD-883, Method 3015, Class 1, HBM: 1500V
Fine Leak Test MIL-STD-883, Method 1014, Condition A
Flammability UL94-V0
Gross Leak Test MIL-STD-883, Method 1014, Condition C
Mechanical Shock MIL-STD-883, Method 2002, Condition B
Moisture Resistance MIL-STD-883, Method 1004
Moisture Sensitivity J-STD-020, MSL 1
Resistance to Soldering Heat MIL-STD-202, Method 210, Condition K
Resistance to Solvents MIL-STD-202, Method 215
Solderability MIL-STD-883, Method 2003
Temperature Cycling MIL-STD-883, Method 1010, Condition B
Vibration MIL-STD-883, Method 2007, Condition A
www.ecliptek.com | Specification Subject to Change Without Notice | Rev F 3/12/2011 | Page 1 of 7
EH2525TTS-101.000M TR
MECHANICAL DIMENSIONS (all dimensions in millimeters)
1.60 ±0.20
5.00
±0.15
7.00
±0.15
MARKING
ORIENTATION
3.68
±0.15
1.4 ±0.1 1.4 ±0.2
2.20
±0.15
5.08
±0.15
12
34
PIN CONNECTION
1 Tri-State
2 Ground
3 Output
4 Supply Voltage
LINE MARKING
1ECLIPTEK
2101.00M
3XXXXXX
XXXXXX=Ecliptek
Manufacturing Identifier
All Tolerances are ±0.1
Suggested Solder Pad Layout
Solder Land
(X4)
All Dimensions in Millimeters
2.88
1.81
2.0 (X4)
2.2 (X4)
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EH2525TTS-101.000M TR
OUTPUT DISABLE
(HIGH IMPED ANCE
STATE)
OUTPUT WAVEFORM & TIMING DIAGRAM
VOH
VOL
80% or 2.0VDC
50% or 1.4VDC
20% or 0.8VDC
Fall
Time Rise
Time TW
T
Duty Cycle (%) = TW/T x 100
VIH
VIL
tPLZ tPZL
CLOCK OUTPUT TRI-STATE INPUT
Supply
Voltage
(VDD)
Test Circuit for TTL Output
Output
No Connect
or Tri-State
Ground
+ +
+
+
_
_
__
Power
Supply Voltage
Meter
Current
Meter
0.01µF
(Note 1) 0.1µF
(Note 1) CL
(Note 3)
RL
(Note 4)
Power
Supply
Oscilloscope Frequency
Counter
Probe
(Note 2)
Note 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency
ceramic bypass capacitor close to the package ground and VDD pin is required.
Note 2: A low capacitance (<12pF), 10X attenuation factor, high impedance (>10Mohms), and high bandwidth
(>300MHz) passive probe is recommended.
Note 3: Capacitance value CL includes sum of all probe and fixture capacitance.
Note 4: Resistance value RL is shown in Table 1. See applicable specification sheet for 'Load Drive Capability'.
Note 5: All diodes are MMBD7000, MMBD914, or equivalent.
Table 1: RL Resistance Value and CL Capacitance
Value Vs. Output Load Drive Capability
Output Load
Drive Capability RL Value
(Ohms) CL Value
(pF)
10TTL
5TTL
2TTL
10LSTTL
1TTL
390
780
1100
2000
2200
15
15
6
15
3
www.ecliptek.com | Specification Subject to Change Without Notice | Rev F 3/12/2011 | Page 3 of 7
EH2525TTS-101.000M TR
Supply
Voltage
(VDD)
Test Circuit for CMOS Output
Output
No Connect
or Tri-State
Ground
+ +
+_
__
Power
Supply 0.01µF
(Note 1) 0.1µF
(Note 1) CL
(Note 3)
Note 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency
ceramic bypass capacitor close to the package ground and VDD pin is required.
Note 2: A low capacitance (<12pF), 10X attenuation factor, high impedance (>10Mohms), and high bandwidth
(>300MHz) passive probe is recommended.
Note 3: Capacitance value CL includes sum of all probe and fixture capacitance.
Voltage
Meter
Current
Meter
Oscilloscope Frequency
Counter
Probe
(Note 2)
www.ecliptek.com | Specification Subject to Change Without Notice | Rev F 3/12/2011 | Page 4 of 7
DIA 50 MIN
DIA 20.2 MIN
DIA 13.0 ±0.2
2.5 MIN Width
10.0 MIN Depth
Tape slot in Core
for Tape Start
DIA 40 MIN
Access Hole at
Slot Location
1.5 MIN
Tape & Reel Dimensions
*Compliant to EIA 481A
EH2525TTS-101.000M TR
16.0
+0.3/-0.1
7.5 ±0.1
6.75 ±0.10
4.0 ±0.1
2.0 ±0.1
8.0 ±0.1 B0*
1.5 +0.1/-0.0
A0*
0.30 ±0.05
K0*
22.4 MAX
360 MAX
Quantity Per Reel: 1,000 Units
16.4 +2/-0
www.ecliptek.com | Specification Subject to Change Without Notice | Rev F 3/12/2011 | Page 5 of 7
T Min
S
T Max
S
Critical Zone
T to T
L P
Ramp-up Ramp-down
TL
TP
t 25°C to Peak
t Preheat
StL
tP
Temperature (T)
Time (t)
Recommended Solder Reflow Methods
EH2525TTS-101.000M TR
High Temperature Infrared/Convection
TS MAX to TL (Ramp-up Rate) 3°C/second Maximum
Preheat
- Temperature Minimum (TS MIN) 150°C
- Temperature Typical (TS TYP) 175°C
- Temperature Maximum (TS MAX) 200°C
- Time (tS MIN) 60 - 180 Seconds
Ramp-up Rate (TL to TP)3°C/second Maximum
Time Maintained Above:
- Temperature (TL)217°C
- Time (tL)60 - 150 Seconds
Peak Temperature (TP)260°C Maximum for 10 Seconds Maximum
Target Peak Temperature (TP Target) 250°C +0/-5°C
Time within 5°C of actual peak (tp)20 - 40 seconds
Ramp-down Rate 6°C/second Maximum
Time 25°C to Peak Temperature (t) 8 minutes Maximum
Moisture Sensitivity Level Level 1
Additional Notes Temperatures shown are applied to body of device.
www.ecliptek.com | Specification Subject to Change Without Notice | Rev F 3/12/2011 | Page 6 of 7
T Min
S
T Max
S
Critical Zone
T to T
L P
Ramp-up Ramp-down
TL
TP
t 25°C to Peak
t Preheat
StL
tP
Temperature (T)
Time (t)
Recommended Solder Reflow Methods
EH2525TTS-101.000M TR
Low Temperature Infrared/Convection 240°C
TS MAX to TL (Ramp-up Rate) 5°C/second Maximum
Preheat
- Temperature Minimum (TS MIN) N/A
- Temperature Typical (TS TYP) 150°C
- Temperature Maximum (TS MAX) N/A
- Time (tS MIN) 60 - 120 Seconds
Ramp-up Rate (TL to TP)5°C/second Maximum
Time Maintained Above:
- Temperature (TL)150°C
- Time (tL)200 Seconds Maximum
Peak Temperature (TP)240°C Maximum
Target Peak Temperature (TP Target) 240°C Maximum 1 Time / 230°C Maximum 2 Times
Time within 5°C of actual peak (tp)10 seconds Maximum 2 Times / 80 seconds Maximum 1 Time
Ramp-down Rate 5°C/second Maximum
Time 25°C to Peak Temperature (t) N/A
Moisture Sensitivity Level Level 1
Additional Notes Temperatures shown are applied to body of device.
Low Temperature Manual Soldering
185°C Maximum for 10 seconds Maximum, 2 times Maximum. (Temperatures shown are applied to body of device.)
High Temperature Manual Soldering
260°C Maximum for 5 seconds Maximum, 2 times Maximum. (Temperatures shown are applied to body of device.)
www.ecliptek.com | Specification Subject to Change Without Notice | Rev F 3/12/2011 | Page 7 of 7
