1N4947GP-E3/53 - Vishay Semiconductors

1N4942GP, 1N4944GP, 1N4946GP, 1N4947GP, 1N4948GP

www.vishay.com Vishay General Semiconductor

Revision: 07-Nov-16 1Document Number: 88511

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Glass Passivated Junction Fast Switching Plastic Rectifier

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

• Fast switching for high efficiency

• Low leakage current

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in fast switching rectification of power supply,

inverters, converters and freewheeling diodes for consumer

and telecommunication.

MECHANICAL DATA

Case: DO-204AL, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

IF(AV) 1.0 A

VRRM 200 V, 400 V, 600 V, 800 V, 1000 V

IFSM 25 A

trr 150 ns, 250 ns, 500 ns

IR1.0 μA

VF1.3 V

TJ max. 175 °C

Package DO-204AL (DO-41)

Diode variation Single die

DO-204AL (DO-41)

SUPERECTIFIER®

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL 1N4942GP 1N4944GP 1N4946GP 1N4947GP 1N4948GP UNIT

Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1000 V

Maximum RMS voltage VRMS 140 280 420 560 700 V

Maximum DC blocking voltage VDC 200 400 600 800 1000 V

Maximum average forward rectified current

0.375" (9.5 mm) lead length at TA = 55 °C IF(AV) 1.0 A

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load IFSM 25 A

Operating junction and storage temperature range TJ, TSTG -65 to +175 °C

1N4942GP, 1N4944GP, 1N4946GP, 1N4947GP, 1N4948GP

www.vishay.com Vishay General Semiconductor

Revision: 07-Nov-16 2Document Number: 88511

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL 1N4942GP 1N4944GP 1N4946GP 1N4947GP 1N4948GP UNIT

Maximum instantaneous

forward voltage 1.0 A VF1.3 V

Maximum DC reverse

current at rated DC

blocking voltage

TA = 25 °C

1.0

μA

TA = 150 °C 200

Maximum reverse

recovery time

IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A trr 150 250 500 ns

Typical junction

capacitance 4.0 V, 1 MHz CJ15 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL 1N4942GP 1N4944GP 1N4946GP 1N4947GP 1N4948GP UNIT

Typical thermal resistance RJA (1) 55 °C/W

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

1N4946GP-E3/54 0.336 54 5500 13" diameter paper tape and reel

1N4946GP-E3/73 0.336 73 3000 Ammo pack packaging

Ambient Temperature (°C)

Average Forward Rectied Current (A)

25 50 75 100 125 150 175

0.25

0.50

0.75

1.00

Resistive or Inductive Load

0.375" (9.5 mm) Lead Length

Peak Forward Surge Current (A)

110 100

Number of Cycles at 60 Hz

TJ = TJ Max.

8.3 ms Single Half Sine-Wave

1N4942GP, 1N4944GP, 1N4946GP, 1N4947GP, 1N4948GP

www.vishay.com Vishay General Semiconductor

Revision: 07-Nov-16 3Document Number: 88511

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.01

0.1

TJ = 25 °C

Pulse Width = 300 μs

1 % Duty Cycle

Percent of Rated Peak Reverse Voltage (%)

020 40 60 80 100

0.01

0.1

100

Instantaneous Reverse Current (μA)

= 125 °C

= 25 °C

= 75 °C

Reverse Voltage (V)

Junction Capacitance (pF)

110 100

100

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

0.01 0.1 110 100

0.1

100

t - Pulse Duration (s)

Typical Thermal Impedance (°C/W)

DO-204AL (DO-41)

1.0 (25.4)

MIN.

1.0 (25.4)

MIN.

0.205 (5.2)

0.160 (4.1)

0.107 (2.7)

0.080 (2.0)

DIA.

0.034 (0.86)

0.028 (0.71)

DIA.

• Lead diameter isfor sufx “E” part numbers

0.026 (0.66)

0.023 (0.58)

Note

Legal Disclaimer Notice

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Revision: 08-Feb-17 1Document Number: 91000

Disclaimer



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