MITS MINARY 2c von Hee pRELI notice Some change 5.9~6.4GHz BAND 10W IN 9 (nal SP e = Ts ic nits ay pat UBISHI SEMICONDUCTOR <GaAs FET> MGFC40VS964A TERNALLY MATCHED GaAs FET \ DESCRIPTION The MGFC40V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES @ Class A operation @ internally matched to 5022 system High output power Pigg = 10W (TYP) @ 5.9~6.4GHz High power gain G_p = 9 dB (TYP) @5.9~6.4GHz @ High power added efficiency Naga = 31%(TYP) @5.9~6.4GHz, PiaB @ Hermetically sealed metal-ceramic package @ Low distortion [Item: -51] IM; = -45 dBc (TYP) @ P, = 29 (dBm) S.C.L. e@ Low thermal resistance Rth(ch-c)S2.8C/W APPLICATION Item-01: 5.9~6.4GHz band power amplifier \tem-51: Digital radio communication QUALITY GRADE 1G OUTLI N E DRAW] NG Unit: millimeters (inches) R125 _20.4 + 0.2 (0.803 + 0.008) (R0.049) I~ | Z| ztre 0.60.15 s{\2 N O(\ooeexe 006) (AO, 047) uy C ITT 2 Yl ce co fT | 38D . sg oF t ge) Sle es HY 4H 2 ~8 Q|2 @ ~~] Lu s| 4sp- - ~ Zz z 2 UC UP ir J ai5_| a oO 24+0.3(0.945 + 0.012) @ ~ Oo Tl ong 3 ~ 13.4 (0.528) Sl ol4 wo S| Hts <Q = 21S oof) eo] sjo HH C=] t eR oO 1 Ss |3 1G mls ~ @ GATE @ SOURCE (FLANGE) GF-18 @ DRAIN ABSOLUTE MAXIMUM RATINGS (Ta =25'c) Symbol Parameter Ratings Unit Vepo Gate to drain voltage 15 v V6so Gate to source voltage 15 Vv lo Orain current 6 A Sor Reverse gate current 20 mA lor Forward gate current 42 mA Pr Total power dissipation =) 53.5 Ww Toh Channel temperature 175 C Tsig Storage temperature 65~- +175 c #1: To = 25C ELECTRICAL CHARACTERISTICS (ta =2s5'c) RECOMMENDED BIAS CONDITIONS Vpos=10V Ip=2.4A Rg=502 Refer to Bias Procedure Limits Symbol Parameter Test conditions Unit Min Typ Max 'pss Saturated drain current Vos=3V, Ves =0V _ 4.5 6 A Sm Transconductance Vos=3V, Ip=2.2A _ 2 _ s Ves(ott) Gate to source cut-off voltage Vos=3V, Ip =40mA -2 3 4 Vv Pigs Output power at 1dB gain 39.5 40.5 dBm Gie Linear power gain 8 9 _ dB Ip Drain current Vos=10V, tp=2.4A, f=5.9~6.4GHz _ 3.0 ~ A Tadd Power added efficiency _ 31 _ % i IM3 3rd order |M distortion *1 42 45 dBe Rth(h-c) | Thermal resistance *2 AVt method _ 2.8 c/w #1: Item-51, 2-tone test P, = 29 dBm Single Carrier Level f=6.4GHz f= 10MHz. * 2: Channel to case NOV. ' 97 MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> N ARY MGFC40V5964A non snot Bee ehange- P RELIM! ana is Notice: THis ec * genits ave 8 Some pares 5.9~6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (ta=25) Pide, Grp vs. f Po, Nadd VS. Pin = 42 & Vps=10V Vps=10V G_up=11dB1098 Ss = Ipg=2.4A Ipg=2.4A ~ 2 4 P.. 80h 6. 15GHz 2 o 1dB oO & ~=40 2 440 9 = & = 35k Z e o - 39 Zz to 430 it 2 < zg w E oc & 397 3 6 120 w 5 420 4 jH_| [Ste 3 | 2 +] o > 25- x ~~ 0 & o dio 6 3 = z & 8 a 20 1 1 L 1 0 5.9 6.0 6.1 6.2 6.3 6.4 15 20 25 30 FREQUENCY f (GHz) , INPUT POWER P;,, (dBm) Po, IM3 vs. Pi, 35 ] Vos=10V _ pear} a lps =2.4A Pout 4 S33) t=6.4GHz2 10 n Af=10MHz /1 Sf | E Lo. 20 eo 31 2-tone test 7 7 2 2 Sf / g 29 IMs -30 = a 7 . s 7 / s oO S/S = ao a7 40 5 LY a | a a 25 50 17 9 (1 23.025 INPUT POWER Pin (dBm S.C.L.) S PARAMETERS (ta=25'c, Vos =10V, Ips =2.4A) S Parameters (TYP.) f Sn Sai Siz S22 (GHz) Magn. Angle (deg. } Magn. Angle (deg. ) Magn. Angle (deg.} Magn. Angle (deg.) 5.9 0.40 170.9 3.59 34.3 0.071 ~ 24.8 0.32 134.4 6.0 0.41 140.3 3.55 6.5 0.072 65.4 0.31 171.2 6.1 0.40 92.6 3.47 47.4 0.073 106.6 0.29 155.1 6.2 0.39 41.3 3.35 88.0 0.073 147.2 0.26 123.6 6.3 0.40 15.1 3.24 ~129.5 0.073 171.2 0.21 95.4 6.4 0.44 76.5 3.09 173.5 0.071 127.6 0.14 77.0 NOV. 97 ELECTRIC