ree ee ere ED a SILICON TRANSISTOR 2SA1413-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION 28A1413-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES @ High Vottage : Vceo = -600 V High Speed : te 2 1.0 us @ Complement to 28C3632-Z2 QUALITY GRADE Standard Please refer to Quality grade on NEC Semiconductor Devices (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Collector to Base Voltage Veso + -600 Vv Collector to Ernitter Voltage Vceo -600 Vv Emitter to Base Voltage Veso 7 v Collector Current (DC) ic -1.0 A Collector Current (Puise}* Ic ~2.0 A Total Power Dissipation (Te = 25 C)** Pr 2.0 Ww Junction Temperature Tj 150 c Storage Temperature Tstg-55 to +150 C * PW = 10 ms, Duty Cycle 3 50 % ** When mounted on ceramic substrate of 7.5 cm? x 0.7 mm PACKAGE DIMENSIONS {in millimeters} 23402 0.5 + 0.1 OB Document No. TC-16364 (0.D. No. TC-5955) Date Published Oecember 1993 M Printed in Japan NEC Corporation 1985 NEC 2SA1413-Z ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Coltector Cutoff Current \eso -10 pA Ves = -600 V, Ie = 6 Emitter Cutoff Current leno -10 BA Ves = -7.0V, io=0 OC Current Gain hee *** 30 58 120 Vee = -8.0 V, fo =-.1A DC Current Gain heea*** 5 19 Vee = -5,0 V, Ie = -O.5 A Coltector Saturation Voltage Veetsan* ** 0.28 -1.0 v Ic = -0.3 A, ia = -60 mA Base Saturation Voltage Vetiean*** 0.85 1.2 Vv le = -0.3 A, tp = ~GO mA Gain Bandwidth Product tr 28 MHz Vce = -10 V, le = 50 MA Output Capacitance Coo 42 pF Ves = -10 V, le = 0, f = 1.0 MHz Turn-on Time ton O41 0.5 BS lez -O.5 A, Rix 5009 Storage Time tue 3.6 5.0 us ler = 42 = -O.1 A Fall time tu 0.08 0.8 ps | Vers -250V *** Pulsed: PW 3 350 us, Duty Cycle 3 2% hre Classification MARKING M L K hres 30 to 60 40 to 80 60 to 120 TYPICAL CHARACTERISTICS (Ta = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE FORWARD SAFE OPERATING AREA ~5.0 Pr ~ Total Power Dissipation - W with 2 era: amie Subst, Mn 50 100 150 Ts ~ Ambient Temperature ~ C 200 ic ~ Collector Current ~ A -1.0 0.5 ~0.01 ~1.0 -3.0 -10 ~30 100 -300 -1000 Ver ~ Collector to Emitter Vaitage - V 197 NEC 2SA1413-Z 198 REVERSE BIAS SAFE OPERATING AREA ic - Collector Currant -A Veceo isus) Q ~200 400 -600 -800 Vce ~ Collector to Emitter Voltage ~ V -1 000 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE -1.0 Vee = -5.0V < ~0.3 5 0.1 6 8 2-0.03 3 oO 1 -0.01 -0.003 0 ~-02 -04 -06 -08 -1.0 -1.2 -14 Vee ~ Base to Emitter Voltage - V COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT ' w o Vettsev ~ Collector Saturation Voltage - V Veetse - Base Saturation Voltage - V 0.53 -0.005 -0.01 ~0.02 ~0.05 -01 -0.2 tc Collector Current - A -1.6 2618 ~0.5 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE tc ~ Collector Current - mA 0.4 0 ~2.0 4.6 6.0 ~3.0 10 Vee ~ Collector to Emitter Voltage ~ DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 300 & s 2 400 co 2 3 30 ie) a 10 3 4 0.002 0.006 0.01 0.02 -0.05 i 2 AS 0 -20 Ic - Collector Current - A TURN OFF TIME vs. COLLECTOR CURRENT 5.0 wo + 4 20 oY 2 8 05 2 Ww 1 th 9 0.03 0.1 +0.3 -1.0 ~3.0 ic ~ Collector Curernt ~ & NEC 2SA1413-Z GAIN BANDWIDTH PRODUCT vs. OUTPUT CAPACITANCE vs. COLLECTOR CURRENT COLLECTOR TO BASE VOLTAGE 100 le=O 50 20 10 5.0 Cob - Output Capacitance - pF 2.0 ft ~ Gain Bandwidth Product - MHz 10 . ~0.002 -0.005 -0.01 -0.02 -0.05 -O.1 ~-02 -3.0 ~10 -30 -100 300 ic Collector Current - mA Vca - Collector to Base Voltage ~ V TRANSIENT THERMAL RESISTANCE oC 1.0 Rwy Transient Thermal Resistance 03 0.01 01 1.0 10 100 PW Pulse Width ~ s 199