V23990-P501-F preliminary data version 0303 fast PACK 0 H, 600V Maximum Ratings / Hochstzulassige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom Repetitive peak collector current Periodischer Kollektorspitzenstrom Power dissipation per IGBT Verlustleistung pro IGBT Gate-emitter peak voltage Gate-Emitter-Spitzenspannung SC withstand time Kurzschluverhalten Diode Inverter Diode Wechselrichter DC forward current Dauergleichstrom Repetitive peak forward current Periodischer Spitzenstrom Power dissipation per Diode Verlustleistung pro Diode copyright by Tyco Electronics 600 V Tj=150C Th=80C, IC 22 A tp=1ms Th=80C Icpuls 44 A Tj=150C Th=80C Ptot 42 W VGE 20 V Tj=125C Vce=390V VGE=15V tSC 3 us Tj=150C Th=80C, IF 15,5 A tp=1ms Th=80C IFRM 31 A Tj=150C Th=80C Ptot 24 W Tjmax 150 C Tstg -40...+125 C Top -40...+125 C Vis 4000 Vdc min 12,7 mm min 12,7 mm Thermal properties Thermische Eigenschaften max. Chip temperature max. Chiptemperatur Storage temperature Lagertemperatur Operation temperature Betriebstemperatur Insulation properties Modulisolation Insulation voltage Isolationsspannung Creepage distance Kriechstrecke Clearance Luftstrecke VCE t=1min Rupert-Mayer-Str. 44, D81359 Munchen power.switches@tycoelectronics.com V23990-P501-F preliminary data version 0303 fast PACK 0 H, 600V Characteristic values Description Symbol Conditions T(C) Transistor Inverter, inductive load Transistor Wechselrichter Gate emitter threshold voltage Gate-Schwellenspannung Collector-emitter saturation voltage Kollektor-Emitter Sattigungsspannung Collector-emitter cut-off Kollektor-Emitter Reststrom Gate-emitter leakage current Gate-Emitter Reststrom Turn-on delay time Einschaltverzogerungszeit Rise time Anstiegszeit Turn-off delay time Abschaltverzogerungszeit Fall time Fallzeit Turn-on energy loss per pulse Einschaltverlustenergie pro Puls Turn-off energy loss per pulse Abschaltverlustenergie pro Puls Input capacitance Eingangskapazitat Output capacitance Ausgangskapazitat Reverse transfer capacitance Ruckwirkungskapazitat Gate charge Gate Ladung Thermal resistance chip to heatsink per chip VGE(th) VCE(sat) ICES IGES td(on) tr td(off) tf Eon Eoff Cies Coss Crss QGate Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Thermal resistance chip to heatsink per chip VF IRM trr Qrr Erec Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C Tj=25C Tj=125C copyright by Tyco Electronics VCE=VGE 15 Rgon=12 Ohm Rgoff=2 Ohm Rgon=12 Ohm Rgoff=2 Ohm Rgon=12 Ohm Rgoff=2 Ohm Rgon=12 Ohm Rgoff=2 Ohm Rgon=12 Ohm Rgoff=2 Ohm Rgon=12 Ohm Rgoff=2 Ohm f=1MHz 600 25 0 15 300 Typ 0,00025 5,6 12 2,5 1,8 Max V 2,75 V 0,25 2 300 mA 12 nA ns 17 15 300 12 ns 8 15 300 12 ns 80 15 300 12 ns 29 15 300 12 mWs 0,155 15 300 12 mWs 0 25 f=1MHz 0 25 0,15 nF f=1MHz 0 25 0,05 nF 15 300 12 78 Rgon=12Ohm 96 1,7 12 15 300 1,92 1,48 nF nC K/W 2,3 12 V A 22,7 Rgon=12Ohm 15 300 12 ns 50 Rgon=12Ohm 15 300 12 uC 0,55 Rgon=12Ohm 15 300 12 mWs 0,089 Tj=25C Tol. 5% DR/R Tc=100C R100=1503Ohm 3,0 9,5 10 K/W 10,5 3,4 Tj=25C B(25/100) Tj=25C Unit 0,133 1,2 R25 P 0 Min Thermal grease thickness50um Warmeleitpaste Dicke50um = 0,61 W/mK RthJH Warmewiderstand Chip-Kuhlkorper pro Chip NTC-Thermistor NTC-Widerstand Rated resistance Nennwiderstand Deviation of R100 Abweichung von R100 Power dissipation given Epcos-Typ Verlustleistung Epcos-Typ angeben B-value B-Wert Other conditions (Rgon-Rgoff) Thermal grease thickness50um Warmeleitpaste Dicke50um = 0,61 W/mK RthJH Warmewiderstand Chip-Kuhlkorper pro Chip Diode Inverter Diode Wechselrichter Diode forward voltage Durchlaspannung Peak reverse recovery current Ruckstromspitze Reverse recovery time Sperreverzogerungszeit Reverse recovered charge Sperrverzogerungsladung Reverse recovered energy Sperrverzogerungsenergie Datasheet values VR(V) IC(A) VGE(V) VCE(V) IF(A) VGS(V) VDS(V) Id(A) %/K 210 Tol. 3% Rupert-Mayer-Str. 44, D81359 Munchen 4500 kOhm mW K power.switches@tycoelectronics.com V23990-P501-F preliminary data version 0303 fast PACK 0 H, 600V Output inverter Figure 1. Typical output characteristics Figure 2. Output inverter IGBT Ic= f(VCE) Typical output characteristics Output inverter IGBT Ic= f(VCE) 25 IC (A) IC (A) 25 20 20 15 15 10 10 5 5 0 0 0 1 2 3 VCE (V) 4 0 5 1 2 3 4 VCE (V) parameter: tp = 250 ms Tj = 25 C VGE parameter: from: 6 V to 16 V in 1 V steps parameter: tp = 250 ms Tj = 125 C VGE parameter: from: 6 V to 16 V in 1 V steps Figure 3. Figure 4. Typical transfer characteristics Output inverter IGBT Ic= f(VGE) Typical diode forward current as a function of forward voltage Output inverter FRED IC (A) IF (A) 25 20 5 IF=f(VF) 25 20 15 15 125 oC o 125 C 10 10 25 oC 25 oC 5 5 0 0 0 2 4 6 8 V GE (V) 10 parameter: tp = 250 ms VCE = copyright by Tyco Electronics 0 0,5 4V Rupert-Mayer-Str. 44, D81359 Munchen 1 1,5 2 2,5 VF (V) 3 parameter: tp = 250 ms power.switches@tycoelectronics.com V23990-P501-F preliminary data version 0303 fast PACK 0 H, 600V Output inverter Figure 5. Typical switching energy losses as a function of collector current Figure 6. Output inverter IGBT E = f (Ic) Typical switching energy losses as a function of gate resistor Output inverter IGBT E = f (RG) E (mWs) E (mWs) 0,4 0,4 0,35 0,35 0,3 0,3 0,25 0,25 Eon Eon 0,2 0,2 Eoff 0,15 0,15 Eoff 0,1 0,1 Erec Erec 0,05 0,05 0 0 0 5 10 15 20 25 IC 30 (A) 0 inductive load, Tj = 125 C VCE = 300 V VGE= 15 V RGon = 6*RGoff = 12 Ohm Figure 7. 20 40 60 80 RG () 100 inductive load, Tj = 125 C VCE = 300 V VGE= 15 V Ic = 12 A Typical switching times as a function of collector current Figure 8. Output inverter IGBT t = f (Ic) Typical switching times as a function of gate resistor Output inverter IGBT t = f (RG) 1 t ( s) t ( s) 1 tdoff 0,1 tdoff 0,1 tf tf tdon 0,01 tr tdon 0,01 tr 0,001 0,001 0 5 10 15 inductive load, Tj = 125 C VCE = 300 V VGE= 15 V RGon =6* RGoff = 12 Ohm copyright by Tyco Electronics 20 25 IC (A) 30 0 10 20 30 40 50 60 70 80 R G90( ) 100 inductive load, Tj = 125 C VCE = 300 V VGE= 15 V Ic = 12 A Rupert-Mayer-Str. 44, D81359 Munchen power.switches@tycoelectronics.com V23990-P501-F preliminary data version 0303 fast PACK 0 H, 600V Output inverter Figure 9. Typical reverse recovery time as a function of gate resistor Figure 10. Typical reverse recovery current as a function of gate resistor Output inverter FRED diode trr = f (Rgon) Output inverter FRED diode IRRM = f (Rgon) 0,07 IrrM (A) 30 t rr( s) In 0,06 25 0,05 20 0,04 15 0,03 In 10 0,02 5 0,01 0 0 0 20 Tj = VR = In= 40 60 80 100 Rgon( )120 0 125 C 300 V 12 A 40 Tj = VR = In= Figure 11. Typical reverse recovery charge as a function of gate resistor 60 80 100 Rgon( ) 120 125 C 300 V 12 A Figure 12. Typical diode peak rate of fall of forward and reverse recovery current as a function of gate resistor Output inverter FRED diode Qrr = f (Rgon) Output inverter FRED diode di0/dt,dIrec/dt= f (Rgon) di/ dt (A/ s) 0,8 Qrr ( C) 20 0,7 3100 2600 0,6 2100 0,5 0,4 1600 In 0,3 1100 0,2 600 0,1 dI0/dt dIrec/dt 0 100 0 20 Tj = VR = In= 40 125 C 300 V 12 A copyright by Tyco Electronics 60 80 100Rgon ( ) 120 0 20 40 Tj = VR = IF= Rupert-Mayer-Str. 44, D81359 Munchen 60 80 100 Rgon ( )120 125 C 300 V 12 A power.switches@tycoelectronics.com V23990-P501-F preliminary data version 0303 fast PACK 0 H, 600V Thermistor Figure 23. Typical NTC characteristic as a function of temperature RT/R25 NTC RT / R25 = f (T) NTC-typical temperature characteristic 1,0 0,9 0,8 0,7 0,6 0,5 0,4 0,3 0,2 0,1 0,0 25 45 copyright by Tyco Electronics 65 85 105 T (C) 125 Rupert-Mayer-Str. 44, D81359 Munchen power.switches@tycoelectronics.com