V23990-P501-F
preliminary data
fast PACK 0 H, 600
V
version 0303
Maximum Ratings / Höchstzulässige Werte
Parameter Condition Symbol Datasheet values Unit
max.
Transistor Inverter
Transistor Wechselrichter
Collector-emitter break down voltage VCE 600 V
Kollektor-Emitter-Sperrspannung
DC collector current Tj=150°C Th=80°C, IC22 A
Kollektor-Dauergleichstrom
Repetitive peak collector current tp=1ms Th=80°C Icpuls 44 A
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT Tj=150°C Th=80°C Ptot 42 W
Verlustleistung pro IGBT
Gate-emitter peak voltage VGE ±20 V
Gate-Emitter-Spitzenspannung
SC withstand time Tj=125°C VGE=15V tSC 3us
Kurzschlußverhalten Vce=390V
Diode Inverter
Diode Wechselrichter
DC forward current Tj=150°C Th=80°C, IF15,5 A
Dauergleichstrom
Repetitive peak forward current tp=1ms Th=80°C IFRM 31 A
Periodischer Spitzenstrom
Power dissipation per Diode Tj=150°C Th=80°C Ptot 24 W
Verlustleistung pro Diode
Thermal properties
Thermische Eigenschaften
max. Chip temperature T
j
max 150 °C
max. Chiptemperatur
Storage temperature Tst
g
-40…+125 °C
Lagertemperatur
Operation temperature To
p
-40…+125 °C
Betriebstemperatur
Insulation properties
Modulisolation
Insulation voltage t=1min Vi
s
4000 Vdc
Isolationsspannung
Creepage distance min 12,7 mm
Kriechstrecke
Clearance min 12,7 mm
Luftstrecke
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P501-F
preliminary data
fas
t
PACK 0 H, 600
V
version 0303
Characteristic values
Description Symbol Conditions Datasheet values Unit
T(C°) Other conditions VGE(V)
VR(V)
VCE(V)
IC(A)
IF(A)
(Rgon-Rgoff) VGS(V) VDS(V) Id(A) Min Typ Max
Transistor Inverter, inductive load
Transistor Wechselrichter
Gate emitter threshold voltage VGE(th) Tj=25°C VCE=VGE 0,00025 5,6 V
Gate-Schwellenspannung Tj=125°C
Collector-emitter saturation voltage VCE(sat) Tj=25°C 15 12 2,5 2,75 V
Kollektor-Emitter Sättigungsspannung Tj=125°C 1,8
Collector-emitter cut-off ICES Tj=25°C 0 600 0,25 mA
Kollektor-Emitter Reststrom Tj=125°C 2
Gate-emitter leakage current IGES Tj=25°C 25 0 300 nA
Gate-Emitter Reststrom Tj=125°C
Turn-on delay time td(on) Tj=25°C Rgon=12 Ohm 15 300 12 ns
Einschaltverzögerungszeit Tj=125°C Rgoff=2 Ohm 17
Rise time trTj=25°C Rgon=12 Ohm 15 300 12 ns
Anstiegszeit Tj=125°C Rgoff=2 Ohm 8
Turn-off delay time td(off) Tj=25°C Rgon=12 Ohm 15 300 12 ns
Abschaltverzögerungszeit Tj=125°C Rgoff=2 Ohm 80
Fall time tfTj=25°C Rgon=12 Ohm 15 300 12 ns
Fallzeit Tj=125°C Rgoff=2 Ohm 29
Turn-on energy loss per pulse Eon Tj=25°C Rgon=12 Ohm 15 300 12 mWs
Einschaltverlustenergie pro Puls Tj=125°C Rgoff=2 Ohm 0,155
Turn-off energy loss per pulse Eoff Tj=25°C Rgon=12 Ohm 15 300 12 mWs
Abschaltverlustenergie pro Puls Tj=125°C Rgoff=2 Ohm 0,133
Input capacitance Cies Tj=25°C f=1MHz 0 25 1,2 nF
Eingangskapazität Tj=125°C
Output capacitance Coss Tj=25°C f=1MHz 0 25 0,15 nF
Ausgangskapazität Tj=125°C
Reverse transfer capacitance Crss Tj=25°C f=1MHz 0 25 0,05 nF
Rückwirkungskapazität Tj=125°C
Gate charge QGate Tj=25°C 15 300 12 78 96 nC
Gate Ladung Tj=125°C
Thermal resistance chip to heatsink per chip RthJH
Thermal grease
thickness≤50um 1,7 K/W
Wärmewiderstand Chip-Kühlkörper pro Chip
Warmeleitpaste
Dicke≤50um
λ = 0,61 W/mK
Diode Inverter
Diode Wechselrichter
Diode forward voltage VFTj=25°C 12 1,92 2,3 V
Durchlaßspannung Tj=125°C 1,48
Peak reverse recovery current IRM Tj=25°C Rgon=12Ohm 15 300 12 A
Rückstromspitze Tj=125°C 22,7
Reverse recovery time trr Tj=25°C Rgon=12Ohm 15 300 12 ns
Sperreverzögerungszeit Tj=125°C 50
Reverse recovered charge Qrr Tj=25°C Rgon=12Ohm 15 300 12 uC
Sperrverzögerungsladung Tj=125°C 0,55
Reverse recovered energy Erec Tj=25°C Rgon=12Ohm 15 300 12 mWs
Sperrverzögerungsenergie Tj=125°C 0,089
Thermal resistance chip to heatsink per chip RthJH
Thermal grease
thickness≤50um 3,0 K/W
Wärmewiderstand Chip-Kühlkörper pro Chip
Warmeleitpaste
Dicke≤50um
λ = 0,61 W/mK
NTC-Thermistor
NTC-Widerstand
Rated resistance R25 Tj=25°C Tol. ±5% 9,5 10 10,5 kOhm
Nennwiderstand
Deviation of R100 DR/R Tc=100°C R100=1503Ohm 3,4 %/K
Abweichung von R100
Power dissipation given Epcos-Typ P Tj=25°C 210 mW
Verlustleistung Epcos-Typ angeben
B-value B(25/100) Tj=25°C Tol. ±3% 4500 K
B-Wert
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P501-F
preliminary data
fast PACK 0 H, 600V version 0303
Output inverter
Fi
g
ure 1. T
yp
ical out
p
ut characteristic
s
Fi
g
ure 2. T
yp
ical out
p
ut characteristic
s
Output inverter IGBT Output inverter IGBT
Ic= f(VCE) Ic= f(VCE)
parameter: tp = 250 ms Tj = 25 °C parameter: tp = 250 ms Tj = 125 °C
VGE parameter: from: 6 V to 16 V VGE parameter: from: 6 V to 16 V
in 1 V steps in 1 V steps
Fi
g
ure 3. T
yp
ical transfer characteristic
s
Fi
g
ure 4. T
yp
ical diode forward current a
s
Output inverter IGB
T
a function of forward voltag
e
Ic= f(VGE) Output inverter FRED IF=f(VF)
parameter: tp = 250 ms VCE = 4 V parameter: tp = 250 ms
0
5
10
15
20
25
012345
VCE (V)
IC (A)
0
5
10
15
20
25
0246810
VGE (V)
IC (A)
125 oC
25
o
C
0
5
10
15
20
25
0 0,5 1 1,5 2 2,5 3VF (V)
IF (A)
25 oC
125 oC
0
5
10
15
20
25
012345
VCE (V)
IC (A)
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P501-F
preliminary data
fast PACK 0 H, 600V version 0303
Output inverter
Figure 5. Typical switching energy losses Figure 6. Typical switching energy losses
as a function of collector current as a function of gate resistor
Output inverter IGBT Output inverter IGBT
E = f (Ic) E = f (RG)
inductive load, Tj = 125 °C inductive load, Tj = 125 °C
VCE =300 V VCE =300 V
VGE=15 V VGE=15 V
RGon = 6*RGoff =12 Ohm Ic = 12 A
Figure 7. Typical switching times as a Figure 8. Typical switching times as a
function of collector current function of gate resistor
Output inverter IGBT Output inverter IGBT
t = f (Ic) t = f (RG)
inductive load, Tj = 125 °C inductive load, Tj = 125 °C
VCE =300 V VCE =300 V
VGE=15 V VGE=15 V
RGon =6* RGoff =12 Ohm Ic = 12 A
tdoff
tf
tdon
tr
0,001
0,01
0,1
1
0 5 10 15 20 25 30
IC (A)
t ( µs)
Eoff
Eon
Erec
0
0,05
0,1
0,15
0,2
0,25
0,3
0,35
0,4
0 5 10 15 20 25 30
IC (A)
E (mWs)
Eoff
Eon
Erec
0
0,05
0,1
0,15
0,2
0,25
0,3
0,35
0,4
0 20406080100
RG (
Ω
)
E (mWs)
tdoff
tf
tdon tr
0,001
0,01
0,1
1
0 102030405060708090100
RG (
Ω
)
t ( µs)
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P501-F
preliminary data
fast PACK 0 H, 600V version 0303
Output inverter
Figure 9. Typical reverse recovery time Figure 10. Typical reverse recovery current
as a function of gate resistor as a function of gate resistor
Output inverter FRED diode Output inverter FRED diode
trr = f (Rgon) IRRM = f (Rgon)
Tj = 125 °C Tj = 125 °C
VR =300 V VR =300 V
In= 12 A In= 12 A
Figure 11. Typical reverse recovery charge Figure 12. Typical diode peak rate of fall of
as a function of gate resistor forward and reverse recovery current
Output inverter FRED diode as a function of gate resistor
Qrr = f (Rgon) Output inverter FRED diode
di0/dt,dIrec/dt= f (Rgon)
Tj = 125 °C Tj = 125 °C
VR =300 V VR =300 V
In= 12 A IF=12 A
In
0
0,01
0,02
0,03
0,04
0,05
0,06
0,07
0 20 40 60 80 100 120
Rgon( Ω)
t rr(µs)
In
0
5
10
15
20
25
30
0 20 40 60 80 100 120
Rgon( Ω)
IrrM (A)
In
0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
0,8
0 20 40 60 80 100 120
Rgon ( Ω)
Qrr ( µC)
dIrec/dt
dI0/dt
100
600
1100
1600
2100
2600
3100
0 20 40 60 80 100 120
Rgon ( Ω)
di/ dt (A/ µs)
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
V23990-P501-F
preliminary data
fast PACK 0 H, 600V version 0303
Thermistor
Figure 23. Typical NTC characteristic
as a function of temperature
NTC
RT / R25 = f (T)
NTC-typical temperature characteristic
0,0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
0,8
0,9
1,0
25 45 65 85 105 125
T (°C)
RT/R25
copyright by Tyco Electronics Rupert-Mayer-Str. 44, D81359 München power.switches@tycoelectronics.com
