To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDN5630
FDN5630 Rev. 3.32000 Fairchild Semiconductor Corporation
Absolute Maximum Ratings TA = 25 C unless otherwise noted
Symbol Parameter Ratings Units
VDSSDrain-Source Voltage 60 V
VGSS Gate-Source Voltage ±20 V
IDDrain Current - Continuous (Note 1a) 1.7 A
- Pulsed 10
PDPower Dissipation for Single Operation (Note 1a) 0.5 W
(Note 1b) 0.46
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
5630 FDN5630 7 8mm 3000 units
GS
D
G
D
S
SuperSOT -3
TM
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
This MOSFET features very low RDS(ON) in a small SOT23
footprint. Fairchild’s PowerTrench technology provides
faster switching than other MOSFETs with comparable
RDS(ON) specifications. The result is higher overall
efficiency with less board space.
Applications
•DC/DC converter
•Motor drives
Features
•1.7 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V
RDS(ON) = 0.120 Ω @ VGS = 6 V.
•Optimized for use in high frequency DC/DC converters.
•Low gate charge.
•Very fast switching.
•SuperSOTTM - 3 provides low RDS(ON) in SOT23 footprint.
FDN5630
60V N-Channel PowerTrench
MOSFET
October 2015
FDN5630
FDN5630 Rev. 3.3
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
a) 250°C/W when
mounted on a 0.02 in2
Pad of 2 oz. Cu.
b) 270°C/W when
mounted on a minimum
pad.
Electrical Characteristics TA = 25 C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA60 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA,Referenced to 25°C63 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 µA
IGSSF Gate-Body Leakage Current,
Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate-Body Leakage Current,
Reverse VGS = -20 V, VDS = 0 V -100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA12.4 3 V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient ID = 250 µA,Referenced to 25°C-6.9 mV/°C
RDS(ON) Static Drain-Source
On-Resistance VGS = 10 V, ID = 1.7 A
VGS = 10 V, ID = 1.7 A, TJ = 125°C
VGS = 6 V, ID = 1.6 A
0.073
0.127
0.083
0.100
0.180
0.120
Ω
ID(on) On-State Drain Current VGS = 10 V, VDS = 1.7 V 5 A
gFS Forward Transconductance VDS = 10 V, ID = 1.7 A 6 S
Dynamic Characteristics
Ciss
Coss
Crss Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics (Note 2)
td(on) Turn-On Delay Time 10 20 ns
trTurn-On Rise Time 6 15 ns
td(off) Turn-Off Delay Time 15 28 ns
tfTurn-Off Fall Time
VDD = 30 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
515ns
QgTotal Gate Charge 7 10 nC
Qgs Gate-Source Charge 1.6 nC
Qgd Gate-Drain Charge
VDS = 20 V, ID = 1.7 A,
VGS = 10 V,
1.2 nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current 0.42 A
VSD Drain-Source Diode Forward
Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.72 1.2 V
Input Capacitance 400 pF
560
Output Capacitance 65 pF
95
27 pF
40
FDN5630
FDN5630 Rev . 3.3
Typical Characteristics
Figure 1. On-Region Characteristics. Figure 2. On-Resistance V ariation
with Drain Current and Gate Voltage.
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward V oltage
V ariation with Source Current
and Temperature.
Figure 3. On-Resistance V ariation
with Temperature. Figure 4. On-Resistance V ariation
with Gate-to-Source V oltage.
0
2
4
6
8
10
12345
VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CUR RE NT (A)
TA = -55oC
25oC
125oC
VDS =5V
0.001
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE VOLTAGE (V)
IS, REVERSE DRAI N CURRE NT (A )
TJ=125oC
25oC
-55oC
VGS=0
0.9
1
1.1
1.2
1.3
1.4
1.5
02468
ID, DRAIN CURR E NT ( A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 4.5V
10V
6.0V 7.0V
5.0V
0
0.05
0.1
0.15
0.2
0.25
246810
VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = 1.7A
TA = 125oC
TA = 25oC
0
2
4
6
8
10
012345
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CUR RE NT (A)
6.0V 5.0V
4.5V
4.0V
3.5V
VGS = 10V
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
TJ, JUN CTIO N TEMPERATURE ( oC)
RDS(ON), NOR MALIZED
DRAIN-S OURCE ON-RESISTANCE
ID =1.7A
VGS = 10V
FDN5630
FDN5630 Rev . 3.3
Typical Characteristics (continued)
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRAN SIENT THERMAL RES IST ANCE
R (t) = r(t) * R
R = 270 C/W
Dut y Cycle, D = t /t
1 2
θJA
θJA
θJA
T - T = P * R (t)
θJA
A
J
P(pk)
t
1 t
2
r(t), NORMALIZ ED EFFECTIVE
1
Single Pu ls e
D = 0.5
0.1
0.05
0.02
0.01
0.2
0
4
8
12
16
20
0.0001 0.001 0.01 0.1 1 10 100 1000
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
RθJA=270oC/W
TA=25oC
0
2
4
6
8
10
02468
Qg, GATE CHARGE (nC)
VGS, GA TE - S OU RCE VOLTAGE (V)
ID = 1.7A VDS = 10V 20V
30V
0
100
200
300
400
500
600
0 102030405060
VDS, DRAIN TO SOURCE VOLTAG E (V)
CAPACITANCE (pF)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
0.01
0.1
1
10
0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
DC10s
1s
100ms
10ms
1ms
100µs
RDS(ON) LIMIT
VGS = 10V
SINGLE PULSE
RθJA = 270oC/W
TA = 25oC
NOTES: UNLESS OTHERWISE SPECIFIED
A) NO JEDEC REFERENCE AS OF AUGUST 2003
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 2009.
E) DRAWING FILE NAME: MKT-MA03BREV3
(0.29)
C
SCALE: 50:1
0.178
0.102
(0.56)
0.43
0.33
0.20
SEATING
PLANE
1.40
LAND PATTERN RECOMMENDATION
SEE DETAIL A
3
1.90
1
0.95
GAGE PLANE
(0.94)
1.12 MAX
0.10 MC
B
BA
M
0.10
0.508
0.382
2
1.40±0.12
0.10
0.00
2.92±0.12 A
1.90
2.51±0.20
2.20
1.00
0.95
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
