2N6050/51/52 2N6057/58/59 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxialbase PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VCEX Ratings Collector-Base Voltage Collector-EmitterVoltage Collector-EmitterVoltage IE=0 IB=0 VBE=-1.5 V Value 2N6050 2N6057 60 2N6051 2N6058 80 2N6052 2N6059 100 2N6050 2N6057 60 2N6051 2N6058 80 2N6052 2N6059 100 2N6050 2N6057 60 2N6051 2N6058 80 2N6052 2N6059 100 COMSET SEMICONDUCTORS Unit V V V 1/4 2N6050/51/52 2N6057/58/59 VEBO Emitter-Base Voltage IC Collector Current ICM Collector Peak Current IB Base Current PT Power Dissipation TJ Ts Junction Storage Temperature IC=0 @ TC < 25 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 5.0 V 12 A 20 A 0.2 mA 150 Watts 200 -65 to +200 C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 Value Unit 1.17 C/W 2N6050/51/52 COMSET SEMICONDUCTORS 2/4 2N6050/51/52 2N6057/58/59 ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol Ratings Test Condition(s) VCE= VCEX VBE=-1.5 V ICEX Collector Cutoff Current VCE= VCEX VBE=-1.5 V TC=150C ICEO IEBO VCEO(SUS) Collector Cutoff Current Emitter Cutoff Current Min Typ Mx Unit 2N6050 2N6057 - - 2N6051 2N6058 - - - - - - - - - - 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 500 A 5 mA 1.0 mA 2.0 mA VCE=30 Vdc, IB=0 2N6050 2N6057 - - VCE=40 Vdc, IB=0 2N6051 2N6058 - - VCE=50 Vdc, IB=0 2N6052 2N6059 - - 2N6050 2N6057 - - 2N6051 2N6058 - - 2N6052 2N6059 - - 2N6050 2N6057 60 - - 2N6051 2N6058 80 - - 2N6052 2N6059 100 - - VEB=5 V Collector-Emitter Sustaining IC=0.1 A Voltage (*) COMSET SEMICONDUCTORS 3/4 V 2N6050/51/52 2N6057/58/59 IC=6 A, IB=24 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC=12 A, IB=120 mA VBE(SAT) VBE(ON) fT Base-Emitter Saturation Voltage (*) Base-Emitter Voltage (*) Transition Frequency IC=12 A, IB=120 mA IC=6 A, VCE=3 V IC=5 A, VCE=3 V, f=1 MHz VCE=3 V, IC=6.0 A hFE DC Current Gain (*) VCE=3.0 V, IC=12 A 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 - - 2.0 V - - 3.0 - - 4 V - - 2.8 V 4 - - MHz 750 - - - 100 - - ! ! ! For PNP types current and voltage values are negative ! ! ! (*) Pulse Width 300 s, Duty Cycle 2.0% COMSET SEMICONDUCTORS 4/4