COMSET SEMICONDUCT ORS 1/4
2
2N
N6
60
05
50
0/
/5
51
1/
/5
52
2
2
2N
N6
60
05
57
7/
/5
58
8/
/5
59
9
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
2N6050
2N6057 60
2N6051
2N6058 80
VCBO Collector-Base Voltage IE=0
2N6052
2N6059 100
V
2N6050
2N6057 60
2N6051
2N6058 80
VCEO Collector-EmitterVoltage IB=0
2N6052
2N6059 100
V
2N6050
2N6057 60
2N6051
2N6058 80
VCEX Collector-EmitterVoltage VBE=- 1.5 V
2N6052
2N6059 100
V
The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-
base PNP transistors in monolithic Darlington
configuration mounted in Jedec TO-3 metal case. They
are inteded for use in power linear and low frequency
switching applications. The complementary NPN types are
2N6057, 2N6058 and 2N6059 res pecti ve ly.
P
PO
OW
WE
ER
R
C
CO
OM
MP
PL
LE
EM
ME
EN
NT
TA
AR
RY
Y
S
SI
IL
LI
IC
CO
ON
N
T
TR
RA
AN
NS
SI
IS
ST
TO
OR
RS
S
COMSET SEMICONDUCT ORS 2/4
2
2N
N6
60
05
50
0/
/5
51
1/
/5
52
2
2
2N
N6
60
05
57
7/
/5
58
8/
/5
59
9
VEBO Emitter-Base Voltage IC=0
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
5.0 V
ICCollector Current
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
12 A
ICM Collector Peak Curr ent
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
20 A
IBBase Current
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
0.2 mA
PTPower Dissipation @ TC < 25°
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
150 Watts
TJ TsJunction
Storage Temperature
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
200
-65 to +200 °C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
RthJ-C Thermal Resistance, Junction to Case
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
1.17 °C/W
2
2N
N6
60
05
50
0/
/5
51
1/
/5
52
2
COMSET SEMICONDUCT ORS 3/4
2
2N
N6
60
05
50
0/
/5
51
1/
/5
52
2
2
2N
N6
60
05
57
7/
/5
58
8/
/5
59
9
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
2N6050
2N6057 --
2N6051
2N6058 --
VCE= VCEX VBE=-1.5 V
2N6052
2N6059 --
500 µA
2N6050
2N6057 --
2N6051
2N6058 --
ICEX Collector Cutoff Current
VCE= VCEX VBE=-1.5 V
TC=150°C 2N6052
2N6059 --
5mA
VCE=30 Vdc, IB=0 2N6050
2N6057 --
VCE=40 Vdc, IB=0 2N6051
2N6058 --
ICEO Collector Cutoff Current
VCE=50 Vdc, IB=0 2N6052
2N6059 --
1.0 mA
2N6050
2N6057 --
2N6051
2N6058 --
IEBO Emitter Cutoff Current VEB=5 V
2N6052
2N6059 --
2.0 mA
2N6050
2N6057 60 - -
2N6051
2N6058 80 - -
VCEO(SUS)
Collector-Emitter Sustaining
Voltage (*) IC=0.1 A
2N6052
2N6059 100 - -
V
COMSET SEMICONDUCT ORS 4/4
2
2N
N6
60
05
50
0/
/5
51
1/
/5
52
2
2
2N
N6
60
05
57
7/
/5
58
8/
/5
59
9
IC=6 A, IB=24 mA
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
--2.0
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=12 A, IB=120 mA
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
--3.0
V
VBE(SAT)
Base-Emitter Satu ration
Voltage (*) IC=12 A, IB=120 mA
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
--4V
VBE(ON) Base-Emitter Voltage (*) IC=6 A, VCE=3 V
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
--2.8V
fTTransition Frequency IC=5 A, VCE=3 V, f=1 MHz
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
4--
MHz
VCE=3 V, IC=6.0 A
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
750 -- -
hFE DC Current Gain (*)
VCE=3.0 V, IC=12 A
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
100 --
! ! ! For PNP types current and voltage values are negative ! ! !
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%