1
Item Symbol Rating Unit
Drain-source voltage V DS 60
Continuous drain current ID40
Pulsed drain current ID(puls] 160
Continuous reverse drain current IDR 40
Gate-source peak voltage VGS ±20
Max. power dissipation PD40
Operating and storage Tch +150
temperature range Tstg
2SK2259-01MR FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
V
A
A
A
V
W
°C
°C
-55 to +150
FAP-IIA SERIES
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
Min. Typ. Max. Units
V
V
µA
mA
µA
mΩ
S
pF
ns
A
V
ns
µC
Min. Typ. Max. Units
Thermal resistance Rth(ch-a) channel to ambient
Rth(ch-c) channel to case 62.5
3.125 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
(ton=td(on)+tr)
Turn-off time toff
(toff=td(off)+tf)
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=60V VGS=0V Tch=25°C
Tch=125°C
VGS=±16V VDS=0V
ID=20A VGS=4V
VGS=10V
ID=20A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=30V RG=25 Ω
ID=40A
VGS=10V
L=100µH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs Tch=25°C
60
1.0 1.5 2.0
500
1.0
10.0
30.0 50.0
20.0 30.0
13.0 25.0
1600 2400
580 870
320 480
15 23
90 140
300 450
190 290
40 1.4
80
0.17
Outline Drawings
Features
High current
Low on-resistance
No secondary breakdown
Low driving power
High forward Transconductance
Avalanche-proof
Including G-S Zener diode
Applications
Motor controllers
General purpose power amplifier
DC-DC converters JEDEC
EIAJ SC-67
TO-220F15
3. Source
2.54
Gate(G)
Source(S)
Drain(D)
2
Characteristics
2SK2259-01MR
FUJI POWER MOSFET
Typical output characteristics
VDS [ V ]
ID
[ A ]
On state resistance vs. Tch
RDS(on)
[ Ω ]
Tch [ °C ]
Typical transfer characteristics
VGS [ V ]
ID
[ A ]
Typical Drain-Source on state resistance vs. ID
ID [ A ]
RDS(on)
[ Ω ]
Typical forward transconductance vs. ID
ID [ A ]
gfs
[ S ]
Gate threshold voltage vs. Tch
Tch [ °C ]
VGS(th)
[ V ]
-40 0 -40 80 120 160
0 2 4 6 8 10 12
0 2 4 6 8 10
100
80
60
40
20
0
0 20 40 60 80 100
50
40
30
20
10
0 0 20 40 60 80 100
4
3
2
1
0
100
80
60
40
20
0
100
80
60
40
20
0
120
100
80
60
40
20
0
-40 0 -40 80 120
3
FUJI POWER MOSFET
Typical capacitance vs. VDS
VDS [ V ]
C
[nF]
Forward characteristics of reverse diode
VSD [ V ]
IF
[ A ]
Allowable power dissipation vs. Tc
Tc [ °C ]
PD
[ W ]
Transient thermal impedance
t [ sec. ]
Rth
[°C/W]
Safe operating area
ID
[ A ]
VDS [ V ]
Typical input charge
VDS
[ V ]
Qg [ nC ]
VGS
[ V ]
0 1.0 2.0
0 50 100 150
0 10 20 30 40
20
16
12
8
4
0
60
50
40
30
20
10
0 0 50 100 150
2SK2259-01MR
50
40
30
20
10
0
100
10-1
10-2
10-5 10-4 10-3 10-2 10-1 100 101
104
103
102
101
10-1 100 101 102
103
102
101
100
10-1
102
101
100
10-1
