IGBT - NPT 600 V HGTG30N60B3 Description The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies. www.onsemi.com VCES IC 1200 V 30 A Features * * * * * * C 30 A, 600 V, TC = 110C Low Saturation Voltage: VCE(SAT) = 1.45 V @ IC = 30 A Typical Fall Time . . . . . . . . . . . . . 90 ns at TJ = 150C Short Circuit Rating Low Conduction Loss This Device is Pb-Free G E E C G TO-247-3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K G30N60B3 $Y &Z &3 &K G30N60B3 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2001 March, 2020 - Rev. 3 1 Publication Order Number: HGTG30N60B3/D HGTG30N60B3 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Ratings Unit 600 V TC = 25C 60 A TC = 110C 30 A Collector Current Pulsed (Note 1) 220 A VGES Gate to Emitter Voltage Continuous 20 V VGEM Gate to Emitter Voltage Pulsed 30 V SSOA Switching Safe Operating Area at TJ = 150C (Figure 2) BVCES IC ICM PD EARV TJ, TSTG TL TSC Description Collector to Emitter Voltage Collector Current Continuous 60 A at 600 V Power Dissipation Total TC = 25C 208 W Power Dissipation Derating TC > 25C 1.67 W/C 100 mJ -55 to +150 C Reverse Voltage Avalanche Energy Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering 260 C Short Circuit Withstand Time (Note 2) VGE = 12 V 4 s Short Circuit Withstand Time (Note 2) VGE = 10 V 10 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360 V, TJ = 125C, RG = 3 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Shipping HGTG30N60B3 G30N60B3 TO-247 Tube 450/Tube ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit BVCES Collector to Emitter Breakdown Voltage IC = 250 A, VGE = 0 V 600 - - V BVECS Emitter to Collector Breakdown Voltage IC = -10 mA, VGE = 0 V 20 - - V Collector to Emitter Leakage Current VCE = BVCES, TC = 25C - - 250 A VGE = BVCES, TC = 150C - - 3.0 mA IC = IC110, VGE = 15 V, TC = 25C - 1.45 1.9 V IC = IC110, VGE = 15 V, TC = 150C - 1.7 2.1 V Gate to Emitter Threshold Voltage IC = 250 A, VCE = VGE 4.2 5.0 6.0 V Gate to Emitter Leakage Current VGE = 20 V - - 250 nA Switching SOA TJ = 150C, RG = 3 VGE = 15 V, L = 100 H, VCE(PK) = 480 V 200 - A TJ = 150C, RG = 3 VGE = 15 V, L = 100 H, VCE(PK) = 600 V 60 - A Gate to Emitter Plateau Voltage IC = IC110, VCE = 0.5 BVCES - 7.2 - V On-State Gate Charge IC = IC110, VCE = 0.5 BVCES, VGE = 15 V - 170 190 nC IC = IC110, VCE = 0.5 BVCES, VGE = 20 V - 230 250 nC ICES VCE(SAT) VGE(th) IGES SSOA VGEP QG(ON) Collector to Emitter Saturation Voltage www.onsemi.com 2 HGTG30N60B3 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25C unless otherwise noted) (continued) Symbol Td(on)I TrI Td(off)I TfI Parameter Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Test Conditions Min. Typ. Max. Unit IGBT and Diode at TJ = 25C ICE = IC110 VCE = 0.8 BVCES VGE = 15 V RG = 3 L = 1 mH Test Circuit (Figure 17) - 36 - ns - 25 - ns - 137 - ns - 58 - ns Eon1 Turn-On Energy (Note 4) - 500 Eon2 Turn-On Energy (Note 4) - 550 800 J Eoff Turn-Off Energy (Note 3) - 680 900 J - 32 - ns - 24 - ns - 275 320 ns - 90 150 ns Td(on)l Trl Td(off)I Tfl Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time IGBT and Diode at TJ = 150C ICE = IC110 VCE = 0.8 BVCES VGE = 15 V RG = 3 L = 1 mH Test Circuit (Figure 17) J Eon1 Turn-On Energy (Note 4) - 500 - J Eon2 Turn-On Energy (Note 4) - 1300 1550 J Eoff Turn-Off Energy (Note 3) - 1600 1900 J Thermal Resistance Junction To Case - - 0.6 C/W RJC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. www.onsemi.com 3 HGTG30N60B3 TYPICAL PERFORMANCE CURVES 225 VGE = 15V ICE, Collector to Emitter Current (A) 50 40 30 20 10 0 25 50 75 100 125 TJ = 150oC, RG = 3 W, VGE= 15V, L =100 mH 200 175 150 125 100 75 50 25 0 150 0 100 TC, Case Temperature (5C) tSC, Short Circuit Withstand Time (ms) FMAX, Operating Frequency (kHz) 10 TC VGE fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 1 o fMAX2 = (PD - PC) / (EON2 + EOFF) 75 C 15V o PC = CONDUCTION DISSIPATION 75o C 10V 110 C 15V (DUTY FACTOR = 50%) 110oC 10V RjJC = 0.6oC/W, SEE NOTES 0.1 5 20 40 10 60 20 450 16 14 350 12 300 10 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) TC = 150oC TC = 25oC 100 75 50 25 0 0 2 4 6 250 tSC 200 8 6 10 11 12 13 14 15 150 Figure 4. Short Circuit Withstand Time DUTY CYCLE <0.5%, VGE = 10V 200 PULSE DURATION = 250 ms 125 400 ISC VGE, Gate to Emitter Voltage (V) 225 TC 700 500 18 Figure 3. Operating Frequency vs. Collector to Emitter Current 150 600 VCE = 360V, RG = 3 W, TJ = 125oC ICE, Collector to Emitter Current (A) = -55oC 500 400 Figure 2. Minimum Switching Safe Operating Area TJ = 150oC, RG = 3 W, L = 1mH, V CE = 480V 175 300 VCE, Collector to Emitter Voltage (V) Figure 1. DC Collector Current vs. Case Temperature 100 200 ISC, Peak Short Circuit Current (A) ICE, DC Collector Current (A) 60 8 10 350 DUTY CYCLE <0.5%, VGE = 15 V PULSE DURATION = 250 ms 300 250 TC = -55oC 200 TC = 150oC 150 100 TC = 25oC 50 0 0 VCE, Collector to Emitter Voltage (V) 1 2 3 4 5 6 VCE, Collector to Emitter Voltage (V) Figure 5. Collector to Emitter On-State Voltage Figure 6. Collector to Emitter On-State Voltage www.onsemi.com 4 7 HGTG30N60B3 TYPICAL PERFORMANCE CURVES (Continued) 4.5 RG = 3 W, L = 1mH, VCE= 480V 5 EOFF, Turn-off Energy Loss (mJ) EON2, Turn-on Energy Loss (mJ) 6 TJ = 25oC, TJ = 150oC, VGE = 10V 4 3 2 1 TJ = 25oC, TJ = 150oC, VGE = 15V 0 10 20 30 40 50 3.5 3.0 2.5 TJ = 150oC, VGE = 10V OR 15V 2.0 1.5 1.0 TJ = 25oC, VGE = 10V OR 15V 0.5 0 60 RG = 3 W, L = 1mH, VCE = 480V 4.0 10 50 60 RG = 3 W, L = 1mH, VCE= 480V TJ = 25oC, TJ = 150oC, VGE = 10V 45 TJ = 25oC, TJ = 150oC, VGE = 10V 40 35 150 TJ = 25oC, TJ = 150oC, VGE = 15V 100 50 30 TJ = 25oC, TJ = 150oC, VGE = 15V 10 20 30 40 50 0 10 60 Figure 9. Turn-on Delay Time vs. Collector to Emitter Current 300 120 Tfl, Fall Time (ns) 250 TJ = 150oC, VGE = 10V, VGE = 15V TJ = 25oC, VGE = 10V, VGE = 15V 200 150 20 30 40 30 40 50 60 Figure 10. Turn-on Rise Time vs. Collector to Emitter Current RG = 3 W, L = 1mH, VCE = 480V 100 10 20 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) Td(off), Turn-off Delay Time (ns) 40 200 Trl, Rise Time (ns) Tdl, Turn-on Delay Time (ns) 250 RG = 3 W, L = 1mH, VCE= 480V 50 25 30 Figure 8. Turn-off Energy Loss vs. Collector to Emitter Current Figure 7. Turn-on Energy Loss vs. Collector to Emitter Current 55 20 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) 50 RG = 3 W, L = 1mH, VCE = 480V 100 80 60 40 10 60 TJ = 150oC, VGE = 10V AND 15V TJ = 25oC, VGE = 10V AND 15V 20 30 40 50 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) Figure 11. Turn-off Delay Time vs. Collector to Emitter Current Figure 12. Fall Time vs. Collector to Emitter Current www.onsemi.com 5 60 HGTG30N60B3 300 16 DUTY CYCLE <0.5%, V CE = 10V PULSE DURATION = 250 ms 250 VGE, Gate to Emitter Voltage (V) ICE, Collector to Emitter Current (A) TYPICAL PERFORMANCE CURVES (Continued) TC = -55oC 200 150 TC = 150oC TC = 25oC 100 50 0 5 4 7 6 8 9 10 14 12 VCE = 600V 10 8 6 VCE = 200V 4 VCE = 400V 2 0 11 Ig (REF) = 1mA, RL = 10 W, TC = 25oC 0 50 100 150 200 QG, Gate Charge (nC) VGE, Gate to Emitter Voltage (V) Figure 13. Transfer Characteristics Figure 14. Gate Charge Waveforms 10 C, Capacitance (nF) FREQUENCY = 1MHz 8 CIES 6 4 COES 2 CRES 0 0 5 10 15 20 25 VCE, Collector to Emitter Voltage (V) ZQJC, Normalized Thermal Response Figure 15. Capacitance vs. Collector to Emitter Voltage 100 0.50 0.20 10-1 0.10 0.05 0.02 10-2 t1 0.01 10-5 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZqJC X RqJC ) + TC SINGLE PULSE 10-4 10-3 10-2 10-1 t1, Rectangular Pulse Duration (s) Figure 16. Normalized Transient Thermal Response, Junction to Case www.onsemi.com 6 PD t2 100 101 HGTG30N60B3 TEST CIRCUITS AND WAVEFORMS HGTG30N60B3D 90% 10% VGE EON EOFF VCE L = 1mH RG = 3 W 90% + - VDD = 480 V 10% ICE td(OFF)I Figure 17. Inductive Switching Test Circuits tfI trI td(ON)I Figure 18. Switching Test Waveforms HANDLING PRECAUTIONS FOR IGBTs 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDt LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. www.onsemi.com 7 HGTG30N60B3 OPERATING FREQUENCY INFORMATION fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 18. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. All other brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO-247-3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2018 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800-282-9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 1 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative