MMBZ5248BLT1 - FREESCALE - Datasheet.Directory

October, 2016 − Rev. 8

1Publication Order Number:

MMBZ5221ELT1/D

MMBZ52xxELT1G Series,

SZMMBZ52xxELT1G Series

Zener Voltage Regulators

225 mW SOT−23 Surface Mount

This series of Zener diodes is offered in the convenient, surface

mount plastic SOT−23 package. These devices are designed to provide

voltage regulation with minimum space requirement. They are well

suited for applications such as cellular phones, hand held portables,

and high density PC boards.

Features

•225 mW Rating on FR−4 or FR−5 Board

•Zener Voltage Range − 2.4 V to 91 V

•Package Designed for Optimal Automated Board Assembly

•Small Package Size for High Density Applications

•ESD Rating of Class 3 (>16 kV) per Human Body Model

•Peak Power − 225 W (8 x 20 ms)

•SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•Pb−Free Packages are Available

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

POLARITY: Cathode indicated by polarity band

FLAMMABILITY RATING: UL 94 V−0

MAXIMUM RATINGS

Rating Symbol Max Unit

Peak Power Dissipation @ 20 ms (Note 1)

@ TL ≤ 25°C

Ppk 225 W

Total Power Dissipation on FR−5 Board,

(Note 2) @ TA = 25°C

Derated above 25°C

225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W

Total Power Dissipation on Alumina

Substrate, (Note 3) @ TA = 25°C

Derated above 25°C

300

2.4

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature Range TJ, Tstg −65 to

+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Nonrepetitive current pulse per Figure 9.

2. FR−5 = 1.0 X 0.75 X 0.62 in.

3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.

Cathode

Anode

See specific marking information in the device marking

column of the Electrical Characteristics table on page 2 of

this data sheet.

DEVICE MARKING INFORMATION

www.onsemi.com

SOT−23

CASE 318

STYLE 8

MARKING

DIAGRAM

Bxx M G

Bxx = Device Code

xx = (Refer to page 2)

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

Device Package Shipping†

ORDERING INFORMATION

MMBZ52xxELT3G SOT−23

(Pb−Free)

10000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBZ52xxELT1G SOT−23

(Pb−Free)

3000 / Tape &

Reel

SZMMBZ52xxELT1G SOT−23

(Pb−Free)

3000 / Tape &

Reel

MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series

www.onsemi.com

ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C

unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)

Symbol Parameter

VZReverse Zener Voltage @ IZT

IZT Reverse Current

ZZT Maximum Zener Impedance @ IZT

IZK Reverse Current

ZZK Maximum Zener Impedance @ IZK

IRReverse Leakage Current @ VR

VRReverse Voltage

IFForward Current

VFForward Voltage @ IF

Zener Voltage Regulator

IZT

ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.)

Device*

Device

Marking

Zener Voltage (Note 4) Zener Impedance Leakage Current

VZ (V) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR

Min Nom Max mA W W mA mAV

MMBZ5221ELT1/T3G BE2 2.28 2.4 2.52 20 30 1200 0.25 100 1

MMBZ5226ELT1/T3G BE7 3.13 3.3 3.47 20 28 1600 0.25 25 1

MMBZ5228ELT1/T3G BE9 3.70 3.9 4.10 20 23 1900 0.25 10 1

MMBZ5229ELT1/T3G BF1 4.08 4.3 4.52 20 22 2000 0.25 5 1

MMBZ5230ELT1/T3G BF2 4.46 4.7 4.94 20 19 1900 0.25 5 2

MMBZ5231ELT1/T3G BF3 4.84 5.1 5.36 20 17 1600 0.25 5 2

MMBZ5232ELT1/T3G BF4 5.32 5.6 5.88 20 11 1600 0.25 5 3

MMBZ5234ELT1/T3G BF6 5.89 6.2 6.51 20 7 1000 0.25 5 4

MMBZ5235ELT1/T3G BF7 6.46 6.8 7.14 20 5 750 0.25 3 5

MMBZ5236ELT1/T3G BF8 7.12 7.5 7.88 20 6 500 0.25 3 6

MMBZ5237ELT1/T3G BF9 7.79 8.2 8.61 20 8 500 0.25 3 6.5

MMBZ5239ELT1/T3G BG2 8.65 9.1 9.55 20 10 600 0.25 3 7

MMBZ5240ELT1/T3G BG3 9.50 10 10.50 20 17 600 0.25 3 8

MMBZ5242ELT1/T3G BG5 11.40 12 12.60 20 30 600 0.25 1 9.1

MMBZ5243ELT1/T3G BG6 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9

MMBZ5244ELT1/T3G BG7 13.30 14 14.70 9 15 600 0.25 0.1 10

MMBZ5245ELT1/T3G BG8 14.25 15 15.75 8.5 16 600 0.25 0.1 11

MMBZ5246ELT1G† BG9 15.20 16 16.80 7.8 17 600 0.25 0.1 12

MMBZ5248ELT1/T1G BH2 17.10 18 18.90 7 21 600 0.25 0.1 14

MMBZ5250ELT1/T3G BH4 19.00 20 21.00 6.2 25 600 0.25 0.1 15

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

*Includes SZ−prefix devices where applicable.

†MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel.

MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series

www.onsemi.com

ELECTRICAL CHARACTERISTICS (continued) (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.)

Device*

Device

Marking

Zener Voltage (Note 5) Zener Impedance Leakage Current

VZ (V) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR

Min Nom Max mA W W mA mAV

MMBZ5252ELT1G† BH6 22.80 24 25.20 5.2 33 600 0.25 0.1 18

MMBZ5253ELT1/T3G BH7 23.75 25 26.25 5 35 600 0.25 0.1 19

MMBZ5254ELT1/T3G BH8 25.65 27 28.35 4.6 41 600 0.25 0.1 21

MMBZ5255ELT1/T3G BH9 26.60 28 29.40 4.5 44 600 0.25 0.1 21

MMBZ5256ELT1/T3G BJ1 28.50 30 31.50 4.2 49 600 0.25 0.1 23

MMBZ5257ELT1/T3G BJ2 31.35 33 34.65 3.8 58 700 0.25 0.1 25

MMBZ5258ELT1/T3G BJ3 34.20 36 37.80 3.4 70 700 0.25 0.1 27

MMBZ5261ELT1G BJ6 49.35 47 44.65 2.7 105 1000 0.25 0.1 36

MMBZ5262ELT1/T3G BJ7 48.45 51 53.55 2.5 125 1100 0.25 0.1 37

MMBZ5263ELT1/T3G BJ8 53.20 56 58.80 2.2 150 1300 0.25 0.1 43

MMBZ5265ELT1G† BK1 58.90 62 65.10 2 185 1400 0.25 0.1 47

5. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

*Includes SZ−prefix devices where applicable.

†MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel.

MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series

www.onsemi.com

TYPICAL CHARACTERISTICS

VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ

VZ, NOMINAL ZENER VOLTAGE (V)

−3

−2

−1

12111098765432

Figure 1. Temperature Coefficients

(Temperature Range −55°C to +150°C)

TYPICAL TC VALUES

FOR MMBZ52xxBLT1G SERIES,

SZMMBZ52xxBLT1G SERIES

VZ @ IZT

VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ

100

110 100

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 2. Temperature Coefficients

(Temperature Range −55°C to +150°C)

TYPICAL TC VALUES

FOR MMBZ52xxBLT1G SERIES,

SZMMBZ52xxBLT1G SERIES

VZ @ IZT

100

VZ, NOMINAL ZENER VOLTAGE

Figure 3. Effect of Zener Voltage on

Zener Impedance

101

ZZT, DYNAMIC IMPEDANCE ( )Ω

1000

100

TJ = 25°C

IZ(AC) = 0.1 IZ(DC)

f = 1 kHz

IZ = 1 mA

5 mA

20 mA

, FORWARD VOLTAGE (V)

Figure 4. Typical Forward Voltage

1.21.11.00.90.80.70.60.50.4

IF, FORWARD CURRENT (mA)

1000

100

75 V (MMBZ5267BLT1)

91 V (MMBZ5270BLT1)

150°C75°C 25°C 0°C

MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series

www.onsemi.com

TYPICAL CHARACTERISTICS

C, CAPACITANCE (pF)

100

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 5. Typical Capacitance

1000

100

1101

BIAS AT

50% OF VZ NOM

TA = 25°C

0 V BIAS

1 V BIAS

VZ, ZENER VOLTAGE (V)

100

0.1

0.01 1086420

TA = 25°C

IZ, ZENER CURRENT (mA)

VZ, ZENER VOLTAGE (V)

100

0.1

0.0110 30 50 70 90

TA = 25°C

IR, LEAKAGE CURRENT ( A)m

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 6. Typical Leakage Current

1000

100

0.1

0.01

0.00

0.0001

0.00001 80706050403020100

+150°C

+25°C

-55°C

IZ, ZENER CURRENT (mA)

Figure 7. Zener Voltage versus Zener Current

(VZ Up to 12 V)

Figure 8. Zener Voltage versus Zener Current

(12 V to 91 V)

100

Figure 9. 8 × 20 ms Pulse Waveform

0020406080

t, TIME (ms)

PULSE WIDTH (tP) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 ms

HALF VALUE IRSM/2 @ 20 ms

% OF PEAK PULSE CURRENT

PEAK VALUE IRSM @ 8 ms

MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series

www.onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

THE BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

SOLDERING FOOTPRINT*

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.000

b0.37 0.44 0.50 0.015

c0.08 0.14 0.20 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.30 0.43 0.55 0.012

0.039 0.044

0.002 0.004

0.017 0.020

0.006 0.008

0.114 0.120

0.051 0.055

0.075 0.080

0.017 0.022

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.027

0−−− 10 0 −−− 10

T____

TOP VIEW

SIDE VIEW

END VIEW

2.90

0.80

DIMENSIONS: MILLIMETERS

0.90

PITCH

3X 0.95

RECOMMENDED

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

STYLE 8:

PIN 1. ANODE

2. NO CONNECTION

3. CATHODE

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Phone: 81−3−5817−1050

MMBZ5221ELT1/D

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