DPG 60 I 400 HA V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns Part number DPG 60 I 400 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Housing: TO-247 Conditions rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage min. typ. V VR = 400 V 1 A VR = 400 V TVJ = 150 C 0.3 mA IF = TVJ = 25 C 1.47 V 1.80 V 1.22 V 1.59 V TC = 120C 60 A TVJ = 175C 0.81 V 60 A IF = TVJ = 150 C 60 A I F = 120 A I FAV average forward current threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current t rr CJ rectangular d = 0.5 for power loss calculation only R thJC reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. Unit 400 I F = 120 A VF0 max. TVJ = 25 C TVJ = 25 C -55 6.1 m 0.55 K/W 175 C TC = 25 C 275 W t = 10 ms (50 Hz), sine TVJ = 45C 450 A TVJ = 25 C 4 A IF = TVJ = 125C 9.5 A 60 A; VR = 270 V -di F /dt = 200 A/s VR = 200 V; f = 1 MHz TVJ = 25 C 45 ns TVJ = 125C 85 ns TVJ = 25 C 61 pF Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100128a DPG 60 I 400 HA Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 70 0.25 -55 Weight A K/W 150 C 6 MD mounting torque FC mounting force with clip 1) typ. 1) g 0.8 1.2 Nm 20 120 N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Logo Marking on product DateCode Assembly Code Ordering Standard D P G 60 I 400 HA abcdef YYWW = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-247AD (2) XXXXXX Part Name DPG 60 I 400 HA Similar Part DPG60IM400QB IXYS reserves the right to change limits, conditions and dimensions. Marking on Product DPG60I400HA Package TO-3P (3) Delivering Mode Tube Base Qty Code Key 30 506242 Voltage Class 400 Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100128a DPG 60 I 400 HA Outlines TO-247 L B E F C A H D G J K IXYS reserves the right to change limits, conditions and dimensions. M N Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.216 0.212 0.244 G H 1.65 - 2.13 4.5 0.065 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.055 0.426 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100128a DPG 60 I 400 HA 22 1.0 120 100 IF = 120 A 60 A 30 A 0.8 20 16 80 0.6 IF [A] IF = 120 A 60 A 30 A 18 IRM 14 Qrr 60 40 12 0.4 TVJ = 150C [A] 10 [C] 25C 20 6 0.0 0.0 0.4 0.8 1.2 VF [V] 1.6 4 0 2.0 200 400 600 110 1.2 100 1.0 90 Kf 0.8 1200 TVJ = 125C VR = 270 V [ns] 70 IF = 120 A 60 A 30 A 60 Qrr 50 40 80 120 160 TVJ [C] 200 400 -diF /dt [A/s] 40 11 10 9 800 8 700 7 600 6 500 5 400 4 300 3 600 Fig. 5 Typ. reverse recovery time trr versus -diF /dt VFR 900 200 0 Fig. 4 Dynamic parameters Qrr, IRM versus T VJ TVJ = 125C VR = 270 V IF = 60 A 1000 [ns] IRM 600 12 tfr 1100 80 0.6 400 Fig. 3 Typ. reverse recovery current IRM versus -diF /dt tfr trr 0 200 -diF /dt [A/s] Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt 1.4 0.2 0 -diF /dt [A/s] Fig. 1 Forward current IF versus forward voltage VF 0.4 TVJ = 125C VR = 270 V 8 TVJ = 125C VR = 270 V 0.2 0 200 400 -diF /dt [A/s] VFR [V] 2 600 Fig. 6 Typ. forward recovery voltage VFR & forward recovery time tfr vs. diF /dt 1.0 IF = 120 A 30 60 A 30 A Erec ZthJC 20 [K/W] [J] 10 TVJ = 125C VR = 270 V 0 0 200 400 -diF /dt [A/s] 600 0.1 10 0 Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. 10 1 10 2 t [ms] 10 3 10 4 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100128a