IRLML6246TRPbF
2www.irf.com
D
S
G
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
Drain-to-Source Breakdown Voltage 20 ––– ––– V
V
/
T
Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C
––– 30 46
––– 45 66
V
Gate Threshold Voltage 0.5 0.8 1.1 V
I
––– ––– 1.0
––– ––– 10
––– ––– 150
I
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
R
Internal Gate Resistance ––– 4.0 ––– Ω
gfs Forward Transconductance 10 ––– ––– S
Q
Total Gate Charge ––– 3.5 –––
Q
Gate-to-Source Charge ––– 0.26 –––
Q
Gate-to-Drain ("Miller") Charge ––– 1.7 –––
t
Turn-On Delay Time ––– 3.6 –––
t
Rise Time ––– 4.9 –––
t
Turn-Off Delay Time ––– 11 –––
t
Fall Time ––– 6.0 –––
C
Input Capacitance ––– 290 –––
C
Output Capacitance ––– 64 –––
C
Reverse Transfer Capacitance ––– 41 –––
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units
I
Continuous Source Current
(Body Diode)
I
Pulsed Source Current
c
V
Diode Forward Voltage ––– ––– 1.2 V
t
Reverse Recovery Time ––– 8.6 13 ns
Q
Reverse Recovery Charge ––– 2.8 4.2 nC
I
= 1.0A
T
= 25°C, V
= 15V, I
=1.3A
V
= 16V, V
= 0V, T
= 55°C
V
= 16V
ƒ = 1.0MHz
R
= 6.8Ω
V
= 4.5V
d
di/dt = 100A/μs
d
V
= 12V
V
= -12V
T
= 25°C, I
= 4.1A, V
= 0V
d
integral reverse
Conditions
V
= 0V, I
= 250μA
Reference to 25°C, I
= 1mA
V
= 4.5V, I
= 4.1A
d
MOSFET symbol
V
=10V
Conditions
V
= 4.5V
V
= 0V
R
DS(on)
V
= 2.5V, I
= 3.3A
d
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current μA
mΩ
V
=10V
d
nA
nC
ns
V
= V
, I
= 5μA
V
=16V, V
= 0V
V
= 16V, V
= 0V, T
= 125°C
V
= 10V, I
= 4.1A
I
= 4.1A
––– –––
––– –––
pF
A
1.3
16