2SK3471 - Toshiba - Datasheet.Directory

2SK3471

2010-04-13

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

2SK3471

Switching Regulator and DC-DC Converter Applications

• Low drain-source ON-resistance: RDS (ON) = 10 Ω (typ.)

• High forward transfer admittance: |Yfs| = 0.4 S (typ.)

• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)

• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 500 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V

Gate-source voltage VGSS ±30 V

DC (Note 1) ID 0.5

Drain current

Pulse (Note 1) IDP 1.5

Drain power dissipation PD 0.5 W

Drain power dissipation (Note 2) PD 1.5 W

Single pulse avalanche energy

(Note 3)

EAS 14.3 mJ

Avalanche current IAR 0.5 A

Repetitive avalanche energy (Note 4) EAR 0.05 mJ

Channel temperature Tch 150 °C

Storage temperature range Tstg −55 to150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to ambient Rth (ch-a) 250 °C/W

Note 1: Ensure that the channel temperature does not exceed 150°C

Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)

Note 3: VDD = 90 V, Tch = 25°C (initial), L = 100 mH, RG = 25 Ω, IAR = 0.5 A

Note 4: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC ―

JEITA SC-62

TOSHIBA 2-5K1B

Weight: 0.05 g (typ.)

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2SK3471

2010-04-13

Marking

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS V

GS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA

Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V

Drain cut-OFF current IDSS V

DS = 500 V, VGS = 0 V ⎯ ⎯ 100 μA

Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V

Gate threshold voltage Vth V

DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V

Drain-source ON resistance RDS (ON) V

GS = 10 V, ID = 0.25 A ⎯ 10 18 Ω

Forward transfer admittance ⎪Yfs⎪ V

DS = 10 V, ID = 0.25 A 0.2 0.4 ⎯ S

Input capacitance Ciss ⎯ 75 ⎯

Reverse transfer capacitance Crss ⎯ 7 ⎯

Output capacitance Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯ 24 ⎯

Rise time tr ⎯ 11 ⎯

Turn-ON time ton ⎯ 18 ⎯

Fall time tf ⎯ 54 ⎯

Switching time

Turn-OFF time toff

⎯ 95 ⎯

Total gate charge

(gate-source plus gate-drain) Qg ⎯ 3.8 ⎯

Gate-source charge Qgs ⎯ 1.9 ⎯

Gate-drain (“miller”) charge Qgd

VDD ≈ 400 V, VGS = 10 V, ID = 0.5 A

⎯ 1.9 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 0.5 A

Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 1.5 A

Forward voltage (diode) VDSF I

DR = 0.5 A, VGS = 0 V ⎯ ⎯ −1.5

Reverse recovery time trr ⎯ 190 ⎯ ns

Reverse recovery charge Qrr

IDR = 0.5 A, VGS = 0 V,

dIDR/dt = 100 A / μs ⎯ 380 ⎯ nC

Note 5: A line beside a Lot No. identifies the indication of product

Labels.

Without a line: [[Pb]]/INCLUDES > MCV

With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament

and of the Council of 27 January 2003 on the restriction of the use of

certain hazardous substances in electrical and electronic equipment.

Z G

Part No.

(or abbreviation code)

Lot No.

Note 5

Duty ≤ 1%, tw = 10 μs

0 V

10 V

VGS

RL = 1 kΩ

VDD ≈ 250 V

ID = 0.25 A

VOUT

4.7 Ω

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2SK3471

2010-04-13

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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of

noncompliance with applicable laws and regulations.

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