AP0903GH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D Simple Drive Requirement Fast Switching Characteristic BVDSS 30V RDS(ON) 9m ID G 51A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-252(H) The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current 51 A ID@TC=100 Continuous Drain Current 32.5 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation TSTG TJ 200 A 39 W Storage Temperature Range -55 to 150 Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case 3 Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice Value Units 3.2 /W 62.5 /W 1 200812112 AP0903GH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=30A - - 9 m VGS=4.5V, ID=20A - - 14.5 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=30A - 30 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=20V - - 100 nA ID=20A - 6.5 10.5 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 1.8 nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.7 nC VDS=15V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=20A - 56 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 15 - ns tf Fall Time RD=0.75 - 3.7 - ns Ciss Input Capacitance VGS=0V - 600 960 pF Coss Output Capacitance VDS=25V - 185 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 80 - pF Rg Gate Resistance f=1.0MHz - 2.5 3.8 Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=30A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=10A, VGS=0V, - 23 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 16 - nC Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP0903GH 160 100 10V 7.0 V 6.0V ID , Drain Current (A) o T C =150 C 10V 7 .0V 6.0V 5.0 V 80 ID , Drain Current (A) o T C =25 C 120 5.0 V 80 V G = 4.0 V 60 V G =4.0V 40 40 20 0 0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 V DS , Drain-to-Source Voltage (V) 1.0 2.0 3.0 4.0 5.0 6.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 16 I D =20A I D =30A V G =10V T C =25 o C Normalized RDS(ON) RDS(ON) (m) 14 12 10 1.6 1.2 0.8 8 0.4 6 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 20 Normalized VGS(th) (V) IS(A) 16 12 T j =25 o C o T j =150 C 8 1.2 0.8 0.4 4 0 0.0 0 0.4 0.8 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP0903GH 8 f=1.0MHz 800 V DS =15V V DS =18V V DS =24V 6 C iss 600 C (pF) VGS , Gate to Source Voltage (V) I D =20A 4 400 C oss 200 2 C rss 0 0 0 2 4 6 8 1 10 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 1000 ID (A) 100 100us 10 1ms 10ms 100ms DC T C =25 o C Single Pulse 1 0.1 1 10 Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 100 0.00001 0.0001 Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) V DS ,Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4