RF2484 RF2484Direct Quadrature Modulator DIRECT QUADRATURE MODULATOR NOT FOR NEW DESIGNS NO T IREF ISIG QSIG 13 SI GN S 14 12 GND GND 3 11 GND -45 +45 6 7 8 9 GND 5 RF OUT 10 VCC PD LO 4 W Functional Block Diagram Product Description NE FO R Dual-Band CDMA Base Stations TDMA/TDMA-EDGE Base Stations GSM-EDGE/EGSM Base Stations W-CDMA Base Stations WLAN and WLL Systems GMSK,QPSK,DQPSK,QAM Modulation 15 GND 2 Applications 16 VCC 1 GND Typical Carrier Suppression>35dBc, Sideband Suppression>35dBc over temperature with highly linear operation Noise Floor better than 152dBm/Hz from 800MHz to 2200MHz Single 5V Power Supply DE QREF Features GND RoHS Compliant & Pb-Free Product Package Style: QFN, 16-pin, 4x4 The RF2484 is a monolithic integrated quadrature modulator IC capable of universal direct modulation for high-frequency AM, PM, or compound carriers. This low-cost IC features excellent linearity, noise floor, and over-temperature carrier suppression performance. The device implements differential amplifiers for the modulation inputs, 90 carrier phase shift network, carrier limiting amplifiers, two matched double-balanced mixers, summing amplifier, and an output RF amplifier which will drive 50 from 800MHz to 2500MHz. It is packaged in a small industry-standard QFN 16-pin plastic package. Ordering Information RF2484 RF2484PCBA-410 GaAs HBT GaAs MESFET InGaP HBT Direct Quadrature Modulator Fully Assembled Evaluation Board Optimum Technology Matching(R) Applied SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS111219 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 12 RF2484 Supply Voltage Rating Unit -0.5 to +7.5 VDC +10 dBm Input LO and RF Levels Operating Ambient Temperature -40 to +85 C Storage Temperature -40 to +150 C Parameter Min. Specification Typ. Max. Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. SI GN S Absolute Maximum Ratings Parameter Unit Condition T=25C, VCC =5V, VREF =4.1V; I and Q driven single-ended LO Input Power Level 800 2500 -6 +6 Input Impedance 45-j95 52-j54 58-j50 Modulation Input DC Reference Voltage (VREF) Input Resistance 250 4.1 NE Frequency Range W 63-j40 FO R RF Output (880MHz) At 880MHz At 1960MHz At 2140MHz At 2400MHz MHz V 30 Input Bias Current MHz dBm DE Frequency Range k 40 A LO= -5dBm at 880MHz; Single sideband testing unless otherwise noted CDMA Output Channel Power -12 dBm For ACPR=-72dBc; I&Q Amplitude=1.1VPP (single-ended) CDMA ACPR -72 dBc Channel Power=-12dBm; see Test Setup for detailed information 50 dBc T=25C; POUT =-10dBm; optimized I,Q DC offsets Carrier Suppression over Temperature 35 dBc Temperature cycled from -40C to +85C after optimization at T=25C; POUT =-10dBm Sideband Suppression 50 dBc T=25C; POUT =-10dBm; optimized I,Q amplitude and phase balance Sideband Suppression over Temperature 35 dBc Temperature cycled from -40C to +85C after optimization at T=25C; POUT =-10dBm dBm/Hz At 20MHz offset, 30kHz res BW, VCC =5V; ISIG, QSIG, IREF, and QREF tied to VREF NO T Carrier Suppression Broadband Noise Floor EVM Phase Error -152.5 2.3 % See Test Setup for detailed information 1 RMS See Test Setup for detailed information Rho .9993 Output Impedance 28-j72 2 of 12 See Test Setup for detailed information 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111219 RF2484 Parameter Min. Specification Typ. Max. Unit Condition LO=-5dBm at 1960MHz; Single sideband testing unless otherwise noted RF Output (1960MHz) PCS CDMA Output Power -13 dBm For ACPR=-72dBc; I&Q Amplitude=1.2VPP (single-ended) PCS CDMA ACPR -72 dBc Channel Power=-13dBm; see Test Setup for detailed information 50 dBc T=25C; POUT =-13dBm; optimized I,Q DC offsets Carrier Suppression over Temperature 35 dBc Temperature cycled from -40C to +85C after optimization at T=25C; POUT =-13dBm Sideband Suppression 50 Sideband Suppression over Temperature 35 -154.5 EVM 2.3 Phase Error 1 Rho .9988 Output Impedance 46-j22 dBc Temperature cycled from -40C to +85C after optimization at T=25C; POUT =-13dBm dBm/Hz At 20MHz offset, 30kHz res BW, VCC =5V; ISIG, QSIG, IREF, and QREF tied to VREF % See Test Setup for detailed information See Test Setup for detailed information See Test Setup for detailed information dBm For ACPR=-60dBc; I&Q Amplitude=1.4VPP (single-ended) dBc Channel Power=-16dBm; see Test Setup for detailed information 50 dBc T=25C; POUT =-13dBm; optimized I,Q DC offsets Carrier Suppression over Temperature 35 dBc Temperature cycled from -40C to +85C after optimization at T=25C; POUT =-13dBm Sideband Suppression 50 dBc T=25C; POUT =-13dBm; optimized I,Q amplitude and phase balance Sideband Suppression over Temperature 35 dBc Temperature cycled from -40C to +85C after optimization at T=25C; POUT =-13dBm dBm/Hz At 20MHz offset, 30kHz res BW, VCC =5V; ISIG, QSIG, IREF, and QREF tied to VREF W-CDMA ACPR -16 LO= -5dBm at 2140MHz; Single sideband testing unless otherwise noted NE W-CDMA Output Channel Power T=25C; POUT =-13dBm; optimized I,Q amplitude and phase balance RMS W RF Output (2140MHz) dBc DE Broadband Noise Floor SI GN S Carrier Suppression -60 FO R Carrier Suppression -152 NO T Broadband Noise Floor EVM 5.9 % See Test Setup for detailed information Phase Error 2.4 RMS See Test Setup for detailed information Rho .9961 Output Impedance 58-j16 See Test Setup for detailed information Power Down Turn On/Off Time PD Input Resistance 100 50 Power Control "ON" Power Control "OFF" DS111219 2.8 1.0 ns k 1.2 V Threshold voltage V Threshold voltage 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 12 RF2484 Parameter Min. Specification Typ. Max. Unit Condition Power Supply Voltage 5.0 4.5 66 Specifications 6.0 V Operating Limits 70 mA 25 A Power Down NO T FO R NE W DE SI GN S Current V 4 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111219 RF2484 5 6 GND VCC 7 PD 8 GND VCC GND GND Q SIG The input of the phase shifting network. This pin has an internal DC blocking capacitor. This port is voltage-driven so matching at different frequencies is generally not required. Same as pin 1. Power supply. An external capacitor is needed if no other low frequency bypass capacitor is nearby. Power Down control. When this pin is "low," all circuits are shut off. A "low" is typically 1.2V or less at room temperature.When this pin is "high" (VCC), all circuits are operating normally. If PD is below VCC, output power and performance will be degraded. Operating in this region is not recommended, although it might be useful in some applications where power control is required. RF Output. This pin has an internal DC blocking capacitor. At some frequencies, external matching may be needed to optimize output power. A small amount of DC current may be present at this output. As a result, if the voltage at this pin is measured using a high impedance probe, some DC voltage may be observed at this output. Same as pin 1. Same as pin 6. Same as pin 1. Same as pin 1. Baseband input to the Q mixer. This pin is DC coupled. The input drive level determines output power and linearity performance; for better carrier suppression, sideband suppression, and dynamic range, the drive level should be as high as possible to meet the required linearity performance. The recommended DC level for this pin is 4.1V. NO T FO R 9 10 11 12 13 RF OUT Same as pin 1. 14 15 I SIG I REF LO SI GN S GND GND LO Interface Schematic V CC 2 0 0 PD DE 2 3 4 Description Ground connection. This pin should be connected directly to the ground plane. Same as pin 1. RF OUT W Function GND NE Pin 1 For optimum carrier suppression, the DC voltages on I REF, Q REF, I SIG and Q SIG should be adjusted slightly to compensate for inherent undesired internal DC offsets; for optimum sideband suppression, phase and signal amplitude on IREF, Q REF, I SIG and Q SIG should be adjusted slightly to compensate for inherent undesired internal offsets. See RFMD AN0001 for more detail. Baseband input to the I mixer. This pin is DC coupled. The input drive level determines output power and linearity performance; for better carrier suppression, sideband suppression, and dynamic range, the drive level should be as high as possible to meet the required linearity performance. The recommended DC level for this pin is 4.1V; see pin 13 for more information. V CC 1 0 0 1 p V CC 1 0 0 1 p Reference voltage for the I mixer. This voltage should be the same as the DC voltage supplied to the I SIG pin. A voltage of 4.1V is recommended; see pin 13 for more information. V CC 1 0 0 The SIG and REF inputs are inputs of a differential amplifier. Therefore the REF and SIG inputs are interchangeable. If swapping the I SIG and I REF pins, the Q SIG and Q REF also need to be swapped to maintain the correct phase. It is also possible to drive the SIG and REF inputs in a differential mode. This will increase the gain. DS111219 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 p 5 of 12 RF2484 Pin 16 Function Q REF Description Interface Schematic Reference voltage for the Q mixer. This voltage should be the same as the DC voltage supplied to the Q SIG pin. A voltage of 4.1V is recommended; see pin 13 for more information. V CC 1 0 0 1 p Pkg Base GND Ground connection. The package base should be connected to the ground plane. SI GN S Package Drawing 0.10 C B -B- 2 PLCS 4.00 0.10 C B 3.75 2 PLCS 2.00 0.80 A TYP 2 1.60 2 PLCS 4.00 DE 1.50 3.75 SQ. 0.75 0.50 0.10 C A INDEX AREA NE 12 MAX Dimensions in mm. 0.10 C A 2 PLCS 3.20 2 PLCS 1.00 0.90 0.05 0.00 0.10 M C A B C 0.05 0.75 0.65 NO T FO R Shaded pin is lead 1. 2.00 0.45 0.28 W 2 PLCS 6 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111219 RF2484 CDMA/W-CDMA Test Setup Rohde & Schwarz AMIQ 1110.2003.02 I SIG Hewlett-Packard 8665B I REF Q SIG Q REF Rohde & Schwarz FSIQ 1119.6001.26 SI GN S LO IN RF2484 Evaluation Board VCC Agilent 66332A RF OUT VPD General Agilent 89441 Vector Signal Analyzer W DE The above setup was used to evaluate the RF2484 under CDMA and W-CDMA modulation conditions. An AMIQ was required to provide the appropriate DC reference voltage (4.1V) for the I and Q pins. I and Q were driven single-endedly; differential drive may improve performance. A PC-controlled Rohde & Schwarz AMIQ generated the CDMA I and Q signals. In order to reduce AMIQ noise contributions to adjacent channel power, W-CDMA baseband signals were filtered using a high order low pass filter before application to the RF2484. EVM, Phase Error, and Rho FO R NE To measure EVM, phase error, and Rho, signals were generated using the AMIQ and decoded with the Agilent VSA. For CDMA Cellular and PCS, I and Q input signals were generated with the Pilot Channel active, 32x oversampling and base station equifilters. For W-CDMA, the Common Pilot Channel was active with 8x oversampling and a root cosine filter. In all cases, relative signal amplitude levels were adjusted to optimize signal quality. CDMA Modulation Setup (Cellular and PCS) NO T To measure ACPR, I and Q input signals were generated using the following settings: * Pilot Channel active * Sync Channel active * Paging Channel active * 6 Traffic Channels active * 32x Oversampling * Base Station equifilter W-CDMA Modulation Setup To measure W-CDMA ACPR, I and Q input signals were generated using the following settings in the AMIQ: * P-CPICH (Common Pilot Channel) active * P-SCH (Sync Channel) active * P-CCPCH (Primary Common Control Physical Channel) active * P-ICH (Page Indicator Channel) Active * DL-DPCCH (Dedicated Physical Control Channel) active * 6 DPCH (Dedicated Physical Channels) active * 8x Oversampling DS111219 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 7 of 12 RF2484 Application Schematic 3 pF 100 nF IREF ISIG QREF QSIG 3 pF 100 nF 1 16 15 14 12 3 LO 11 -45 4 3 pF 100 nF 5 6 VCC 10 +45 VCC 7 8 9 100 nF 100 nF RF OUT NO T FO R NE W DE PD SI GN S 2 13 8 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111219 RF2484 Evaluation Board Schematic P1 NOTES: 1. R1 is installed for non-independent control of I and Q reference voltages. R1a gives independent control of reference voltages. 2. Components with * following the reference designator should not be populated on the evaluation board. P1-1 P2 1 VCC 2 GND 3 GND P2-1 P2-3 CON3 R1a* 0 1 VREF/QREF 2 GND 3 IREF CON3 J3 ISIG R1 0 C5 3 pF C6 100 nF VREF/QREF C7 3 pF C8 100 nF 16 15 14 DE 3 -45 4 +45 6 7 NE W 5 8 11 VCC 10 C3 3 pF 9 C4 100 nF 2484400- J1 RFOUT C2 100 nF NO T FO R C1 3 pF 13 12 J2 LO J4 QSIG U1 1 2 VCC SI GN S IREF DS111219 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 9 of 12 RF2484 Evaluation Board Layout Board Size 2.0" x 2.0" NO T FO R NE W DE SI GN S Board Thickness 0.028", Board Material FR-4 10 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111219 RF2484 RF2484 Cellular CDMA Spectra at Various Output Levels (ACPR @ 885kHz, Vcc = 5.0V, Vref = 4.1V, T = 25C) -20 -20 -30 -30 -40 CP = -9.5 dBm; ACPR = -68 dBc -50 CP = -10.6 dBm; ACPR = -70 dBc -60 CP = -12.0 dBm; ACPR = -72 dBc CP = -14.7 dBm; ACPR = -73 dBc -70 -80 CP = -12.9 dBm; ACPR = -72 dBc -60 CP = -14.3 dBm; ACPR = -73 dBc -70 -80 -90 -90 -100 877.5 878 878.5 879 879.5 880 880.5 881 881.5 882 -100 1957.5 1958 1958.5 1959 1959.5 1960 1960.5 1961 1961.5 1962 1962.5 882.5 Frequency (MHz) Frequency (MHz) RF2484 Output Channel Power vs I, Q Input Voltage Level (Vcc = 5.0V, Vref = 4.1V, T = 25C, CDMA/W-CDMA Mod.) DE RF2484 Output Power versus I, Q Input Voltage Level (Vcc = 5.0V, Vref = 4.1V, T = 25C, Single Sideband) 5 -5 NE -5 -10 880 MHz -15 -20 0 200 FO R 1960 MHz 400 600 800 1000 Output Channel Power (dBm) -10 W 0 SSB Output Power (dBm) CP = -11.1 dBm; ACPR = -71 dBc -50 SI GN S Note: Below ~-90dBm, test setup noise inhibits accurate ACP measurement. Power (dBm) Power (dBm) -40 RF2484 PCS CDMA Spectra at Various Output Levels (ACPR @ 885 kHz, Vcc = 5.0V, Vref = 4.1V, T = 25C) -15 -20 880 MHz CDMA Signal 1960 MHz CDMA Signal 2140 MHz W-CDMA Signal -25 2140 MHz -30 1200 1600 250 500 750 1000 1250 1500 1750 2000 2250 2500 I, Q Input Voltage Level (mVpp) NO T I, Q Input Voltage Level (mVp) 1400 DS111219 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 11 of 12 RF2484 RoHS* Banned Material Content Bill of Materials Die Molding Com pound Lead Fram e Die Attach Epoxy Wire Solder Plating Yes 0.037 526 e3 Pb 0 0 0 0 0 0 Cd 0 0 0 0 0 0 Parts Per Million (PPM) Hg Cr VI 0 0 0 0 0 0 0 0 0 0 0 0 PBB 0 0 0 0 0 0 SI GN S RoHS Compliant: Package total w eight in grams Compliance Date Code: Bill of Materials Revision: Pb Free Category: PBDE 0 0 0 0 0 0 DE This RoHS banned m aterial content declaration w as prepared solely on inform ation, including analytical data, provided to RFMD by its suppliers, and applies to the Bill of Materials (BOM) revision noted above. NO T FO R NE W * DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment 12 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111219