TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/354
T4-LDS-0092 Rev. 2 (101320) Page 1 of 4
DEVICES LEVELS
2N2604 2N2604UB JAN
2N2605 2N2605UB JANTX
JANTXV
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N2604 2N2605 Unit
Collector-Base Voltage VCBO 80 70 Vdc
Collector-Emitter Voltage VCEO 60 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current IC 30 mAdc
Total Power Dissipation @ TA = +25°C (1) P
T 400 mW/°C
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Max. Unit
Thermal Resistance, Junction-to-Ambient
RθJA
437
°C/mW
UB 275
Note:
1/ Consult 19500/354 for thermal curves
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Base Cutoff Current
ICBO
VCB = 80V dc
VCB = 70V dc
VCB = 50V dc
VCB = 50V dc, TA = +150°C
2N2604, UB
2N2605, UB
2N2604, 2N2605, UB
2N2604, 2N2605, UB
10.0
10.0
10.0
5.0
uAdc
nAdc
uAdc
uAdc
Collector-Emitter Breakdown Current
IC = 10mAdc V(BR)CEO 60 Vdc
Emitter-Base Cutoff Current
VEB = 6.0Vdc
VEB = 5.0Vdc
IEBO
10.0
2.0
uAdc
ηAdc
Collector-Emitter Cutoff Current
VCE = 50Vdc ICES 10
ηAdc
TO-46 (TO-206AB )
UB Package
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0092 Rev. 2 (101320) Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERTICS (2)
Forward-Current Transfer Ratio
hFE
IC = 10
μ
Adc, VCE = 5.0Vdc 2N2604, UB
2N2605, UB
40
100
120
300
IC = 500
μ
Adc, VCE = 5.0Vdc 2N2604, UB
2N2605, UB
60
150
180
450
IC = 10mAdc, VCE = 5.0Vdc 2N2604, UB
2N2605, UB
40
100
160
400
IC = 10mAdc, VCE = 5.0Vdc, TA = -55°C 2N2604, UB
2N2605, UB
15
30
Collector-Emitter Saturation Voltage
VCE(sat)
Vdc
IC = 10mAdc, IB = 500
μ
Adc 0.3
Base-Emitter Saturation Voltage
VBE(sat)
Vdc
IC = 10mA, IB = 500
μ
Adc 0.7 0.9
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Small-Signal Short-Circuit Input Impedance
hie
kΩ
IC = 1.0mAdc, VCB = 5.0Vdc, f = 1.0kHz 2N2604, UB
2N2605, UB
1.0
2.0
10
20
Small-Signal Open-Circuit Forward Current Output Admittance
hoe
μmhos
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz 2N2604, UB
2N2605, UB
40
60
Small-Signal Short-Circuit Forward Current Transfer Ratio
hfe
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz 2N2604, UB
2N2605, UB
60
150
180
450
Magnitude of Small-Signal Forward Current Transfer Ratio
|hfe|
IC = 0.5mAdc, VCE = 5.0Vdc, f = 30MHz 1.0 8.0
Output Capacitance
Cobo
pF
VCB = 5.0Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz 6.0
Noise Figure
dB
VCE = 5.0Vdc, IC = 10
μ
Adc, Rg = 10kΩ, f = 100Hz
VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 1.0kHz
VCE = 5.0Vdc, IC = 10μAdc, Rg = 10kΩ, f = 10kHz
F
1
F2
F3
5.0
3.0
3.0
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0092 Rev. 2 (101320) Page 3 of 4
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.
2. Millimeters are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods or by the gauge and gauging procedure.
6. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
7. Lead number three is electrically connected to case.
8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
9. Symbol r applied to both inside corners of tab.
10. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions - (TO-46).
Symbol
Dimensions
Inches Millimeters Note
Min Max Min Max
CD .178 .195 4.52 4.95
CH .065 .085 1.65 2.16
HD .209 .230 5.31 5.84
LC .100 TP 2.54 TP 5
LD .016 .021 0.41 0.53 6
LL .500 1.750 12.70 44.45 6
LU .016 .019 0.41 0.48 6
L1 .050 1.27 6
L2 .250 6.35 6
Q .040 1.02 4
TL .028 .048 0.71 1.22 3, 8
TW .036 .046 0.91 1.17 3, 8
r .010 0.25 9
α 45° TP 45° TP 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0092 Rev. 2 (101320) Page 4 of 4
PACKAGE DIMENSIONS
Dimensions
Dimensions
Symbol Inches Millimeters Notes
Symbol Inches Millimeters Notes
Min Max Min Max
Min Max Min Max
BH .046 .056 1.17 1.42 LS1 .035 .039 0.89 0.99
BL .115 .128 2.92 3.25 LS2 .071 .079 1.80 2.01
BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61
CL .128 3.25
r .008 0.20
CW .108 2.74
r
1 .012 0.31
LL1 .022 .038 0.56 0.97 r
2 .022 0.56
LL2 .017 .035 0.43 0.89
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions, surface mount (UB version).
