2N71i0A-2N780 Numerical Index gle MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS 6 | ce | REPLACE: | PAGE Pp |B] ty | Vee | Vce- |= fre @ Ic Veeisat) @ Ie 2) fle TYPE (EIS | ment | Numper | USE & 5 Ee ala. lB] "2B =/o. @ 25C | S| C | wolts) | (volts) |S | (min) (max) >] (volts) = 3 5\s 2N710A| G] P uss] 150m | AJ 100] 15 15 | s[ 25 10M 0.5] 10M 2n711 | G| P 8-25 | HSS] 150M | A] 100] 12 12 | S{ 20} 250] Lom 0.5} 10M 150M | T 2N711A} G] P 8-25 uss] 150M | Aj 1oo| 15 {7.0 | of 25] 150} 10M | 0.55] 50M 150M | T 2N711B| Gl] P 8-25 | HSS| 150M { Al Loo] 18 [7.0 | of 30] 150| 1om | 0.25| lom 150M | T 2N715 | S| N] 2N2221] 8-108 | RFA} 500M | A] 175] 50 35 | of 10) 30] 15M 1.2{ Lsm 70M | E 2N716 | S| N]| 2N2221| 8-108 | RFA| 500M | A] 175| 70 40 | o} 10] 50] 15M 1.2; 15M 7OM | E 2N717 1 S| N| 2N222%] 8-108 | RFA] 400M | Aj] 175| 60 | 40 | R] 20; 60} 150M 1.5] 150M 40M | T 2N718 | S| N 8-28 | RFA] 400M | A] 175] 60 | 40 | R| 40} 120] 150m 1.5] 150M 50M | T 2N718A] S| N 8-30 | RFA] 500M | AJ 200] 75 50 | R] 40} 120] 150M 1.5] 150m {| 30 | E] 60m | T 2n719 { S| N[ 2N3498} 8-232 | RFA] 400M [ A| 175] 120 | 80 | R| 20] 60} 150M 5.0/ tom | 15 | E| 40m | T 2n7194| S| N| 2N3498] 8-232 | RFA} 500M | A| 200] 120 so | R} 20] 60} 150M 1.2} 50M | 15 ] E] 40M | T 2n720 | S| N{ 2N3498| 8-232 | RFA| 400M | A] 175] 120 go | R]| 40] 120] 150M 5.0] 150M | 35 | BE] 50M { T 2N720A] S| N| 2N3498| 8-232 | msal Soom | al 200] 120 [100 | rR] 40] 1207 150m 5,0] 150m | 30 f e] Som [ t 2n721 | s} P 8-34 | RFA} 400M | A| 200] 50 50 | R]| 20] 45] 150M 1.5] 150M 15 | E| 50M | T 2nN721A| s| P RFA| 500M | A} 200} 50 50 | R}| 20] 45] 150M 0.5] 150m | 15 | E} Som | T 2N722 ) 8) P 8-36 | REA} 400M | Aj 175| 50 50 | R} 30) 96) 150M 1.5} 150m } 25 ) BE) 6om | tT 2n722A| Ss] P] 2N2837| 8-161 | RFA] 500M | A| 200] 50 50 | R} 30] 90] 150M 0.5] 150m | 25 | E| 60m | 2n725 |} G] P HSA| 150M | A] 100] 15 12 | s| 20 10M 2n726 | S| P| 2n3250] 8-208 | AFA] 300M | A] 175] 25 20 | o| 15] 45] 10m 0.6; 1om | 15 | E| 140M | T 2N727 | S| P| 2N3250] 8-208 | AFA] 300M | AJ 175] 25 20 | o| 30] 120] 10M 0.6] tom | 30 | E| 140M | r 2N728 | S} N| 2N2539} 8-251 | HsS{ 4.0M | A] 175] 15 15 | 0} 20] 200] 10M 0.7| LOM 100M | T 2729 | s|} w\ 2n2539} 8-151 | uss} 4.om | At izs| 30 | 30 | 0} 20] 200) 10M 0.7) LOM 100M | T 2n730 | S| N| 2N2218| 8-108 | AFA] 500M | A] 175] 60 | 40 | R{| 20} 60] 150M 1.5} 150M 4om | T 2n731 | S| N 8-38 | aFA| 500M | A] 175{ 60 | 40 [| R} 40] 120] 150M 1.5] 150M 25M | T 2n734 | S| N{ 2N2221{ 8-i08 | APA] Soom [ A| 175] 80 60 [ol is} 50} 5.0m 1.0] 10m | 20 | E 2N734A| S| N AFA| 0.5W | A] 200| 80 60 | oO] 15] 50] 5.0m 0.5| tom | 20 | Ee] 30M | T 2n735 | S| N| 2n2221| 8-108 | AFA{ Soom | A| 175| 80 60 | o| 30] 100| 5.0m 1.0] 10M | 40 | E 2N735A| S|] N AFA} 0.5W | A] 200] 80 60 | oO} 30] 100) 5.0m 0.5} tom | 40 | E}] 60M | T 2N736 | S| N| 2N2222] 8-108 | AFA] 500M | A] 175] 80 60 | Oo} 60] 200] 5.0m 1.0] lom | 80 | E 2N736A| S| N| 2Nn2222| 8-108 | ara] 500M | A] 175] 80 60 | Oo} 60] 200] 5.0m 0.6| 10M { 80 | FE] 100M | T 2n736B| S| N AFA| 0.5W | A} 200] 80 60 | 0} 60] 200] 5.0m o.5{ lom | 80 | E|] 100M | T 2n738 | S| N AFA| 500M | A] 175] 125 go | of 15{ 50] 5.0m 1.0] 10M | 20 | E 2N738A| S| N AFA{ 0.5 | Al 200| 125 so | o| 15| 50 5.0m o.5{ lom | 20 | E| 30m | tT 2n739 | s| N AFA[ 500M | A] 175] 125 80 | o] 30] 100] 5.0m 1.0] tom | 40 | E 2n739A| S| N AFA| 0.5W | A] 200] 125 80 | Oo] 30] 100] 5.0m 0.5| tom | 40 | E| 60m | T 2n740 | S| N 8-39 | AFA] 0.5W | Al 200] 125 80 | oO] 60] 200] 5.0m 80 | E 2N740A| 8] N AFA| 0.5W [ A[ 200] 125 | 80 | O] 6Of 2007 5.0m 0.5{ lom | 80 | E [100M [T 2N741 | G| P 9-13 | RFA} 150M | A| 100} 15 15 | Ss} 10 5.0M 2 E an741a| G) P 9-13. | RFA} 150M } A} 100) 20 | 20 | s{ 10 5.0M 20 | E | 300M | T 2n742 | s| N| 2Nn2218] 8-108 | MSs] O.5w | A] 200] 60 60 | of 25 10M 0.5}| LOM 2N7424| S| N| 2N2218| 8-108 | Mss] 0.5w | A] 200| 60 60 | oO} 25 LOM 0.5| 10M 2N743 | S| N 8-41 | Hss] 300M | A] 200] 20 12 | Oo} 20] 60] lom | 0.3 10M 200m | T 2N743A1 S| N Hss |0.36W | A} 200] 40 15 | oO] 20] 60] 10M 500M | T 2n744 | S| N 8-43 | HSS] 300M | A] 175] 20 12 | oO} 40] 120) 10M | 0.35] 10M 300M | T INT44A} 8) N Hss|o.36W | A} 200} 40 15 | o} 40} 120) 10M 500M | T 2n745 | S| N Aralo.isw | Al 175| 45 30 | Of 20] 55] 10M 19 | E] 1oM | B 2n746 | S| N AFA|o.15w | A] 175| 45 30 | O| 45] 150] OM 39 | E}| loM |] B 2n747 | S| N MSS} 200M ] A| 175| 25 25 | o}| 30{ 90] loM 0.6| 5.0M 2nN748 | S| N Mss/| 200M | Al 175[ 30 30 | oO] 20] 407 tom 0.5| 5.0M 2n749 | s| N RFA| 200M | A/ 175] 45 25 | o| 151 55| 10M 30 | EB] 50M {| B 2N751 S| N RFA| 200M | A} 175 20 20 Q 30] 150 10M 10 E 20M | B 2N752 | S| N]| 2N2221] 8-108 | VID] 0.5w | A} 200] 85 45 | 0 1.2} 15M | 40 | E| 200M | T 2N753 | S] N 8-21 | HSA] 300M | A] 175 20 | R} 40] 120] 10M 0.6| LOM 200M | T 2N754 | S| N| 2Nn2218| 8-108 | RFA] 0.3W | A] 175] 60 60 | R]| 20] 80} 5.0M 0.8| 10M 30M | T 2n755 | S| N| 2N2218] 8-108 | RFA| 0.3W | A] 175] 100 80 | R| 20] 80} 5.0M 0.8| 10M 30M | T 2n756 | S| N AFA; 0.5W [A{ 200] 45 | 45 10 1.0] tom | 12 | E| 5om | B 2N756A} S|} N AFA| 0.5W | A} 200] 60 60 | 0 1.0, tom | 12 | E] 50M |] B 2n757 | S| N AFA! 0.5W | Al 200} 45 45 | 0 1.0] tom | 18 | E} 50M] B 2N757A| S| N AFA} 0.5W | A] 200] 60 60 | 0 1.0} tom | 18 | E] 50M | B 2n758 | S| N AFA/ 0.54 | A] 200] 45 45 | 0 1.0] lom | 18 | E] 50M | B 2N758A| STN AFA! O.5W | A[ 200| 60 60 [0 1.0, iow [ 18 [TE 50m [8 2N758B} S| N AFA} 0.54 ] A] 200] 60 60 | oO} 12 1.0M 0.5) tom } 18 ) E} 50M) B 2n759 | S| N AFA| 0.5W | A] 200] 45 | 45 | 0 1.0] 1om | 36 | E] 50M | B 2N759A| S| N AFA; 0.5W | Al 200] 60 60 | 0 1.0! lom | 36 | E] 50M | B 2N759B] s| N AFA] 0.5W | A] 200) 60 60 | Oo] 25 1.0M 0.5| lom | 36 | E] 50M |] B 2N760 | S| N AFA] 0.5W ; Al 200] 45 45 | 0 1.0] lom | 76 | E] 50M | B 2N760A] S] N AFA| 0.5W | Al 200] 60 60 | 0 1.0] iom | 76 | E] 50M | B 2N760B) 8] N AFA] 0.50 | A] 200) 60 60 | 0} 50 1.0m 0.5, 10M | 76 | EB] 50M] B 2N761 | S| N AFA] 0.5W | A] 200] 50 30 | oO} 20] 35] 10M 1.0} LOM 19 | E] 50M | B 2n762 s| N AFA] 0.5w | al 200] 50 30 | oO} 45] 15 10M 1.0] lom | 39 |] E| 50m | B N? thru Thyristors, see Table on Page 1-154 2N767 2n768 | c| P| 2n961 | 8-74 | Hss| 35M | A| loo] 12 io | s{ 25 2.0M | 0.13] 2.0M 125M | T 2n769 | G| P| 2N961 | 8-74 Hss}| 35M | A] loo] 12 {7.0 | o| 25 20M | 0.25| 10M 100M | T 2n770 | S| N Hss| 150M | A] 150] 20 15 | Oo] 12] 60] 20M | 0.25] 10OM 75M | T 2n771 | s| N Hss| 150M | A] 150] 20 15 | O| 30] 150] 20m | 0.25] Lom 100M | T 2n772 | SIN HSs| 150M | Aj 150] 25 25 | of 20 10M | 0.25; 10M 75M | T 2n773 | s| N RFA| 150M | Al 250] 20 15 | oO 4.0} 16] 1.5M 6.0 | E 2n774 | s| N RFA| 150M | A] 150] 20 15 | o] 7.0] 30] 1.5m il |e 2N775 | S| N RFA| 150M | A] 150] 20 15 | oO] 20] 80] 1.5 28 | E 2n776 | S| N RFA| 150M | A] 150] 20 15 | 0] 4.0] 16] 1.5m 6.0 | E 2n777 | S| N RFA| 150M | A] 150} 20 15 | of 7.0] 30] 1.5m 11 | 2n778 | S| N RFA| 150M | A] 150] 20 15 | of 20] 80] 1.5m 28 | E 2n779 | cl P| ang6d | 8-74 | Hss| 60M | A} 100| 15 15 | s| 50} 200] 10m | 0.16 10M 320M | T 2n779a| c| P| 2N964 | 8-74 | HSS} 60M | A/ 100] 15 15 | s| so] 200] 1om | 0.125] 10m 320M | T 2n779B| G| P| 2N964 | 8-74 | HSS} 150M | A] loo} 15 15 | S| 50{ 200] 10M | 0.125] om 320M | 7 2n780 | $| N{ 2N2220| 8-108 | AFA] 1.0W | C] 175] 45 45 35] 140] 500* 1.0{ 10M 60M | T 1-110WN XK \N CW KX \\ we WN WN Switching and General Purpose Transistors QUICK SELECTION GUIDE GERMANIUM HIGH-SPEED SWITCHING TRANSISTORS The following tables list germanium transistors recommended for high- speed switching applications. All are PNP devices. Preselection of devices for this applications category can be made by first selecting those devices that fill the voltage and current requirements (from Table below), then comparing the dynamic characteristics of the devices select- ed by consulting the subsequent table for a further narrowing of the field. Final device selection can then be made by consulting the complete data sheets. CURRENT versus VOLTAGE (PNP Germanium High-Speed Switching Transistors) AQ Q AANNRAARERN WW ~~ LN ~ ~ ~ AAAS WW BVceo MINIMUM OPTIMUM COLLECTOR CURRENT RANGE VOLTS 1 mA - 50 mA 10 mA - 100 mA 100 mA - 500 mA 2N705 2N711A 2N710 2N711B 2N711 2N960 2N968 2N961 2N969 2N962 5-9 2N970 2N963 2N971 2N964 2N972 2N964A 2N973 2N965 2N974 2N966 2N975 2N967 2N985 2N559 2N2635 2N1204 2N1204A 2N1494 10 - 15 2N1494A 2N2096 2N2099 2N2381 2N3883 16 - 20 2N2956 2N2097 2N2957 2N2100 2N2382 __ 2N1495 more than 2N2955 2N1496 21 SN XX DsD~?A AN WN ~~ 8-6 Switching and General Purpose Transistors GERMANIUM HIGH SPEED SWITCHING TRANSISTORS (continued) PNP GERMANIUM HIGH-SPEED SWITCHING TRANSISTORS (Dynamic Characteristics) 3 y Switching Times (max) Type Oo CE( sat) @ L/I Number 2 fp her @ Ig (max) cB ton Core ton and tore 6 (MHz)| (min/max) (mA) ( Volts) (mA) | (ns) | (ns) Test Conditions 2N705 A | 325| 25/ 10 0.3 10/1 | 75 | 200 | 1, =10 ma, 2N710 A| 325] 25/ 0.5 75 | 200 | 4p1 = 1 MAs Ipg = 0.25 mA 2N711 A] 300] 20/ 0.5 100 | 350 aN711A | B| 150/ 25/150 0.55 100 | 300 2n711B | B| 150| 30/150 0.45 100 | 300 2N960 B | 300] 20/ 0.4 50/5 | 50 | 85 2N961 B | 300] 20/ 0.4 | 50 | 85 2N962 B | 300] 20/ 0.4 50 | 100 2N963 B | 300] 20/~ 0.2 10/1 | 60 | 120 | 1,, =1.0 mA, I, = 1.25 mA 2N964 B| 300] 40/ 0. 35 50/5 | 50 | 85 | In, =1.0 mA, Ip, = 0.25 mA 2N964A B | 300] 40/ 0.28 50 | 85 2N965 B} 300] 40/ 0. 35 50 | 85 2N966 B] 300] 40/ 0. 35 ! 50 | 100 2N967 B} 300] 40/ 0.2 10/1 | 60 | 120 | Ij, =1mA, Igy = 1.25 mA 2N968 A} 250] 17/~ 0.25 75 | 150 | I, = 10 ma, 2N969 Al 250] 17/ Q. 25 75 | 150 | Fp = 2 As Tyg = 0-25 mA 2N970 A] 250] 17/ 0.25 100 | 275 2N9T7L A| 250] 17/~ 0,25 100 | 275 2N972 A| 250} 40/ 0. 25 25 | 175 2N973 A| 250] 40/ 0.25 78 | 175 2N974 a| 250] 40/ 0.25 100 | 275 2N975 A[ 250] 40/ 0.25 100 | 275 2N985 B} 300} 40/ 0, 15 Y 35 | 80 | In, =5 mA, Ip, = 1.25 mA 2ni204 | c} 120} 15/ 400 | 0.5 200/10) | aniz04a | cl 110] 25/ 200 | 0.5 | aniaga. | oc] 110] 15/ 400 | 0.4 | ani4o4a | c] 110] 25/ 200 | 0.4 y// ani4es | cl 150] 25/~ 200 | 0.3 200/20} | 2ni496 | C] 150] 25/ 400 | 0.3 { ~| WWII QMKWK)'/wiWmwWi MI i\WW:iwiw WWJ W'WW;'iry(cercrcirisW- Switching and General Purpose Transistors 2N710 (continued) ELECTRICAL CHARACTERISTICS (continued) 2n/11,A,B (GERMANIUM) Characteristic Symbol Min Typ Max Unit Base-Emitter Saturation Voltage VeR(sat) Vde (Ig = 10 mAdc, 1, = 0.4 mAdc) 0.34 0. 42 0.5 Delay + Rise Time t at t. ns (Ig = 10 mAdc, I, = 1.0 mAdc) - 60 75 Storage Time t, ns (p1 = 1.0 mAdc, The = 0.25 mAdc) - 65 100 Fall Time te ns (Igy = 1 mAdc, Ip = 0- 25 mAdc) - 70 100 Vcro =7V Ic = 50-100 mA PNP germanium mesa transistors for high-speed switching applications. CASE 22 (TO-18) Collector connected to case MAXIMUM RATINGS Rating Symbol! | 2N711 | 2N711A_ | 2N771B Unit Collector-Base Voltage 12 18 18 Vde Collector-Emitter Voltage Vors 12 14 15 Vdc Collector-Emitter Voltage VcEO _ 7 7 Vde Emitter-Base Voltage 1 1.5 2 Vde Collector Current (Continuous) 50 100 100 mAdc Emitter Current (Continuous) 50 100 100 mAdc Junction Temperature <_ 100 C Storage Temperature Tstg -65 to+ 100 | % Device Dissipation @ TQ = 25C < 300 mW Derating factor above 25C < 4 > |mw/C Device Dissipation @ Tg = 25C 150 ~-} mW Derating factor above 25C 2 - imw/c 8-25 Switching and General Purpose Transistors 2N711,A,B (continued) ELECTRICAL CHARACTERISTICS (At 25C unless otherwise noted) Characteristic Sym | Min Typ | Max | Unit Collector-Base Breakdown Voltage BVcBo Vde (Ig = 100 4 Ade, Ig = 0) 2N711 12 _ _ 2N7TLLA 15 ~ (lc = 20 ywAde, Ip = 0) 2N711B 18 _ _ Collector-Emitter Breakdown Voltage BVcrs Vde (Ig = 100 p Adc) 2N711 12 _ _ 2N711A 14 _ _ (Ig = 20 Adc) 2N711B 15 ~ _ Collector-Emitter Breakdown Voltage BVcro Vde (Ic = 5 mAdc, Ip = 0) 2N711A, 2N711B} 7 _ _ Emitter-Base Breakdown Voltage BVEBO Vdc (lg = 0.1 mAdc, Ip = 0) 2N711 1.0 _ _ 2N711A 1.5 _ _ 2N711B 2.0 _ _ Collector-Base Cutoff Current IcBo wAdc (Vog = 5 Vde, Ig = 0) 2N711 _ 0.2 3.0 2NTLLA _ _ 1.5 (Vop = 10 Vade, Ig = 0) 2N711B _ 1.5 Emitter-Base Cutoff Current Igpo pAdc (Vgep = 1 Vde) 2NTLLA - _ 100 2N711B _ _ 20 DC Current Gain bre _ (Ig = 10 mAdc, Vcg = 0.5 Vde) 2N711 20 30 _ 2N711A 25 _ 150 2N711B 30 _ 150 (ig = 50 mAdc, Vog = 0.7 Vdc) 2N711A, 2N7115B) 40 _ _ Collector Saturation Voltage Vox(sat) Vde (ig = 10 mAdc, Ip = 0.5 mAdc) 2N711 _ 0.2 0.5 2N711A _ _ 0.30 (ig = 10 mAdc, Ip = 0.4 mAdc) 2NTLIB _ ~~ 0.25 (Ig = 50 mAdc, Ip = 2 mAdc) 2N711A _ _ 0.55 2N711B _ 0.45 Small-Signal Current Gain hee _ {Ig = 10 mAdc, Vog = 5 Vde, f = 100 MHz) 2N711A, 2N711B) 1.6 _ - (Ig = 10 mAdc, Vog = 0.5 Vde, f = 100 MHz) 2N711A 1d _ _ 2N711B 1.2 _ _ Base-Emitter Voltage VBE Vae (Ig = 10 mAdc, Ip = 0.4 mAdc) 2N711, 2N7L1A 0.30 0.38 0.44 2N711B 0.30 - 0.44 (Ig = 50 mAdc, Ip = 2 mAdc) 2N711A 0.40 _- 0.65 2N711B 0.40 _ 0.65 Collector Output Capacitance Cob pF (Vop = 5 Vde, Ig = 0,f = 1 MHz} 2N71LA, 2N711B) _ 6 (Vop = 10 Vdc, Ip = 0, f = 1 MHz) 2N711 5.0 _ Fall Time te ns Figure 1: { 2NTL1A _ _ 150 gure.) 2N711B _ - 110 2N7T11A _ 110 Figure 2: 2N711B _ _ 100 2N711 _ 90 150 Minority Carrier Storage Time ts ns Fi L: { 2N711A _ 150 gure 1: 4 on711B - _ 140 2N71LA _ _ 120 Figure 2: 4 2N711B _ _ 100 2N711 _ 90 200 Delay Plus Rise Time tatty ns Figure 1: { 2N711A, 2N711 _ 100 F 2: { 2N711A, 2N711 _ _ % teure 22 ow7i1 = 70 100 8-26 Switching and General Purpose Transistors 2N711,A,8 (continued) ANPUT. HEWLETT-PACKARD MODEL 212A PULSE GEN. a - Vow (sat), COLLECTOR SATURATION VOLTAGE (VOLTS) NORMALIZED 0-C CURRENT GAIN old he SWITCHING CIRCUITS FIGURE 1 SCRFEE. rexrrowx 545 OF EQUIVALENT 357K 102K = Bazza slig 317.8K yf 5 Wt a Our 8+ - 8 our Nv 12de g- + + = NOTE: ALL RESISTORS +1% COLLECTOR SATURATION VOLTAGE versus AMBIENT TEMPERATURE 0.6 LL 05 04 io a | le/ln == 10 03 emai x Iq == 20 made a 0.2 Oh No se 0 Ade | | aetna i 01 = i 0.1 60 40 20 0 +420 440 +460 +80 +100 Ta, AMBIENT TEMPERATURE (C) NORMALIZED DC CURRENT GAIN versus COLLECTOR CURRENT 05 10 2.0 .0 10.0 20.0 50.0 100.0 Ic, COLLECTOR CURRENT (ma) 8-27 Vow (sat), COLLECTOR SATURATION VOLTAGE (VOLTS) FIGURE 2 3.8 de INPUT soon COPE TEKTRONIX 541 +1.25 OR EQUIVALENT o= -F- 5K 5.4 RISE AND FALL TIME << 1 ns PULSE WIDTH 0.5 us SKL MOD, 503 OR EQUIVALENT COLLECTOR SATURATION VOLTAGE STORAGE TIME versus CIRCUIT CURRENT RATIO 06 0.5 0.4 0.3 Ic = 20mAde 0.2 0.2 1 2 4 6 8 10 20 40 60 80 100 Io/lp CIRCUIT CURRENT RATIO STORAGE TIME versus CIRCUIT CURRENT RATIO 250 200 N NY \c = 50 mAde 3 NS = 150 Ww oe # N z lc = 10 made 5 1g1 =4 'g2 Pp a R, = 100 50 Ly a MN Rg= 1Ko N 0 | 0 5 10 15 Io/lg1 , CIRCUIT CURRENT RATIO