2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–59 March 11, 2000-21

FEATURES

• Very High Current Transfer Ratio, 500% Min.

• High Isolation Resistance, 10

The 4N32 and 4N33 are optically coupled isolators

with a Gallium Arsenide infrared LED and a silicon

photodarlington sensor. Switching can be achieved

while maintaining a high degree of isolation between

driving and load circuits. These optocouplers can be

used to replace reed and mercury relays with advan-

tages of long life, high speed switching and elimina-

tion of magnetic fields.

Maximum Ratings

Collector-Emitter Breakdown Voltage, BV

Emitter-Base Breakdown Voltage, BV

......... 8.0 V

Collector-Base Breakdown Voltage,

..............................................................50 V

Emitter-Collector Breakdown Voltage,

Total Dissipation at 25

C Ambient ................250 mW

Derate Linearly from 25

C .........................3.3 mW/

C

Isolation Test Voltage................................. 5300

(between emitter and detector,

Standard Climate: 23

Leakage Path ........................................ 7.0 mm min.

Air Path................................................... 7.0 mm min.

Isolation Resistance

11

Storage Temperature ......................–55

C to +150

Operating Temperature ..................–55

C to +100

Lead Soldering Time at 260

=3.0 V

=0 V

=100

A,

=100

A,

=0.5 mA,

=10 mA,

=2.0 mA,

.130 (3.0)

.018 (0.45)

.022 (0.55)

2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA 4N32/33

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–60 March 11, 2000-21