© Semiconductor Components Industries, LLC, 2002
October, 2016 − Rev. 13
1Publication Order Number:
NUD3124/D
NUD3124, SZNUD3124
Automotive Inductive Load
Driver
This micro−integrated part provides a single component solution to
switch inductive loads such as relays, solenoids, and small DC motors
without the need of a free−wheeling diode. It accepts logic level
inputs, thus allowing it to be driven by a large variety of devices
including logic gates, inverters, and microcontrollers.
Features
•Provides Robust Interface between D.C. Relay Coils and Sensitive
Logic
•Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts
•Replaces 3 or 4 Discrete Components for Lower Cost
•Internal Zener Eliminates Need for Free−Wheeling Diode
•Meets Load Dump and other Automotive Specs
•SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These are Pb−Free Devices
Typical Applications
•Automotive and Industrial Environment
•Drives Window, Latch, Door, and Antenna Relays
Benefits
•Reduced PCB Space
•Standardized Driver for Wide Range of Relays
•Simplifies Circuit Design and PCB Layout
•Compliance with Automotive Specifications
Gate (1) 10 k
100 K
Drain (3)
Source (2)
INTERNAL CIRCUIT DIAGRAMS
Gate (2) 10 k
100 K
Drain (6)
Source (1)
Gate (5)
Drain (3)
Source (4)
10 k
100 K
CASE 318 CASE 318F
www.onsemi.com
MARKING DIAGRAMS
SOT−23
CASE 318
STYLE 21
JW6 MG
G
JW6 = Specific Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
SC−74
CASE 318F
STYLE 7
JW6 = Specific Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
JW6 MG
G
1
2
3
1
6
Device Package Shipping†
ORDERING INFORMATION
NUD3124LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUD3124DMT1G SC−74
(Pb−Free)
3000 / Tape &
Reel
SZNUD3124LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
SZNUD3124DMT1G SC−74
(Pb−Free)
3000 / Tape &
Reel
NUD3124, SZNUD3124
www.onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol Rating Value Unit
VDSS Drain−to−Source Voltage – Continuous
(TJ = 125°C)
28 V
VGSS Gate−to−Source Voltage – Continuous
(TJ = 125°C)
12 V
IDDrain Current – Continuous
(TJ = 125°C)
150 mA
EZSingle Pulse Drain−to−Source Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(TJ Initial = 85°C)
250 mJ
PPK Peak Power Dissipation, Drain−to−Source (Notes 1 and 2)
(TJ Initial = 85°C)
20 W
ELD1 Load Dump Suppressed Pulse, Drain−to−Source (Notes 3 and 4)
(Suppressed Waveform: Vs = 45 V, RSOURCE = 0.5 W, T = 200 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(TJ Initial = 85°C)
80 V
ELD2 Inductive Switching Transient 1, Drain−to−Source
(Waveform: RSOURCE = 10 W, T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(TJ Initial = 85°C)
100 V
ELD3 Inductive Switching Transient 2, Drain−to−Source
(Waveform: RSOURCE = 4.0 W, T = 50 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(TJ Initial = 85°C)
300 V
Rev−Bat Reverse Battery, 10 Minutes (Drain−to−Source)
(For Relay’s Coils/Inductive Loads of 80 W or more)
−14 V
Dual−Volt Dual Voltage Jump Start, 10 Minutes (Drain−to−Source) 28 V
ESD Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
2,000 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current square pulse 1.0 ms duration.
2. For different square pulse durations, see Figure 2.
3. Nonrepetitive load dump suppressed pulse per Figure 3.
4. For relay’s coils/inductive loads higher than 80 W, see Figure 4.
NUD3124, SZNUD3124
www.onsemi.com
3
THERMAL CHARACTERISTICS
Symbol Rating Value Unit
TAOperating Ambient Temperature −40 to 125 °C
TJMaximum Junction Temperature 150 °C
TSTG Storage Temperature Range −65 to 150 °C
PDTotal Power Dissipation (Note 5) SOT−23
Derating above 25°C
225
1.8
mW
mW/°C
PDTotal Power Dissipation (Note 5) SC−74
Derating above 25°C
380
3.0
mW
mW/°C
RqJA Thermal Resistance Junction–to–Ambient (Note 5) SOT−23
SC−74
556
329
°C/W
5. Mounted onto minimum pad board.
NUD3124, SZNUD3124
www.onsemi.com
4
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain to Source Sustaining Voltage
(ID = 10 mA)
VBRDSS 28 34 38 V
Drain to Source Leakage Current
(VDS = 12 V, VGS = 0 V)
(VDS = 12 V, VGS = 0 V, TJ = 125°C)
(VDS = 28 V, VGS = 0 V)
(VDS = 28 V, VGS = 0 V, TJ = 125°C)
IDSS
−
−
−
−
−
−
−
−
0.5
1.0
50
80
mA
Gate Body Leakage Current
(VGS = 3.0 V, VDS = 0 V)
(VGS = 3.0 V, VDS = 0 V, TJ = 125°C)
(VGS = 5.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V, TJ = 125°C)
IGSS
−
−
−
−
−
−
−
−
60
80
90
110
mA
ON CHARACTERISTICS
Gate Threshold Voltage
(VGS = VDS, ID = 1.0 mA)
(VGS = VDS, ID = 1.0 mA, TJ = 125°C)
VGS(th) 1.3
1.3
1.8
−
2.0
2.0
V
Drain to Source On−Resistance
(ID = 150 mA, VGS = 3.0 V)
(ID = 150 mA, VGS = 3.0 V, TJ = 125°C)
(ID = 150 mA, VGS = 5.0 V)
(ID = 150 mA, VGS = 5.0 V, TJ = 125°C)
RDS(on)
−
−
−
−
−
−
−
−
1.4
1.7
0.8
1.1
W
Output Continuous Current
(VDS = 0.25 V, VGS = 3.0 V)
(VDS = 0.25 V, VGS = 3.0 V, TJ = 125°C)
IDS(on) 150
140
200
−
−
−
mA
Forward Transconductance
(VDS = 12 V, ID = 150 mA)
gFS −500 −mmho
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Ciss −32 −pf
Output Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Coss −21 −pf
Transfer Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Crss −8.0 −pf
SWITCHING CHARACTERISTICS
Propagation Delay Times:
High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V)
High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V)
Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V)
tPHL
tPLH
tPHL
tPLH
−
−
−
−
890
912
324
1280
−
−
−
−
ns
Transition Times:
Fall Time; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Rise Time; Figure 1, (VDS = 12 V, VGS = 3.0 V)
Fall Time; Figure 1, (VDS = 12 V, VGS = 5.0 V)
Rise Time; Figure 1, (VDS = 12 V, VGS = 5.0 V)
tf
tr
tf
tr
−
−
−
−
2086
708
556
725
−
−
−
−
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NUD3124, SZNUD3124
www.onsemi.com
5
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
Figure 1. Switching Waveforms
Load Dump Pulse Not Suppressed:
VR = 13.5 V Nominal ±10%
VS = 60 V Nominal ±10%
T = 300 ms Nominal ±10%
TR = 1 − 10 ms ±10%
Load Dump Pulse Suppressed:
NOTE: Max. Voltage DUT is exposed to is
NOTE: approximately 45 V.
VS = 30 V ±20%
T = 150 ms ±20%
Figure 2. Maximum Non−repetitive Surge
Power versus Pulse Width
PW, PULSE WIDTH (ms)
100101
0
5
10
15
20
25
Ppk, PEAK SURGE POWER (W)
Figure 3. Load Dump Waveform Definition
VS
TR
90%
10%
T
VR, IR
10% of Peak;
Reference = VR, IR
Vout
Vin
0 V
VOH
VIH
tr
tf
tPLH
tPHL
50%
90%
50%
10% VOL
NUD3124, SZNUD3124
www.onsemi.com
6
Figure 4. Load Dump Capability versus
Relay’s Coil dc Resistance
RELAY’S COIL (W)
35026023020017014011080
40
60
80
100
120
140
Figure 5. Drain−to−Source Leakage versus
Junction Temperature
Figure 6. Gate−to−Source Leakage versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
7550250−25−50
0
2
4
6
8
10
14
10050250−25−50
20
30
40
50
60
70
80
Figure 7. Breakdown Voltage versus Junction
Temperature
TJ, JUNCTION TEMPERATURE (°C)
125500−25−50
33.6
33.8
34.0
34.4
34.6
34.8
VS, LOAD DUMP (VOLTS)
320290
IDSS, DRAIN LEAKAGE (mA)
125100
75 125
IGSS GATE LEAKAGE (mA)
VGS = 5 V
VGS = 3 V
25 10075
34.2
33.4
BVDSS BREAKDOWN VOLTAGE (V)
ID = 10 mA
Figure 8. Output Characteristics
VDS = 28 V
Figure 9. Transfer Function
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.70.50.40.30.20.0
1E−10
1E−08
1E−06
1E−04
0.01
1
0.1 0.6 0.8
ID DRAIN CURRENT (A)
VGS = 5 V
VGS = 3 V
12
VGS = 2 V
VGS = 2.5 V
VGS = 1 V
VGS, GATE−TO−SOURCE VOLTAGE (V)
4.53.02.52.01.50.5
1E−07
1E−05
1E−06
1E−04
0.1
1
1.0 4.0 5.0
ID DRAIN CURRENT (A)
125 °C
3.5
0.001
0.01
85 °C
25 °C
−40 °C
VDS = 0.8 V
NUD3124, SZNUD3124
www.onsemi.com
7
Figure 10. On Resistance Variation versus
Junction Temperature
Figure 11. On Resistance Variation versus
Gate−to−Source Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V)
2.21.81.61.41.21.0
0.00
0.02
0.04
0.06
0.08
0.10
0.12
2.0 2.4
ID = 250 mA
0.01 0.1 1.0 10 100 1000 10,000 100,000 1,000,000
D = 0.5
0.2
0.1
0.05
0.02
SINGLE PULSE
0.01
Pd(pk)
t1
t2
DUTY CYCLE = t1/t2
PERIOD
PW
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.1
0.01
0.001
t1, PULSE WIDTH (ms)
Figure 12. Zener Clamp Voltage versus Zener
Current
IZ, ZENER CURRENT (mA)
101.00.1
32.0
32.5
33.0
33.5
34.0
34.5
35.0
100 1000
VZ ZENER CLAMP VOLTAGE (V)
Figure 13. Transient Thermal Response for NUD3124LT1G
TJ, JUNCTION TEMPERATURE (°C)
7550250−25−50
400
600
800
1000
1200
1400
1800
RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW)
125100
ID = 0.25 A
VGS = 3.0 V
1600
ID = 0.15 A
VGS = 5.0 V
ID = 0.15 A
VGS = 3.0 V
0.14
0.16
0.18
0.20
RDS(ON), DRAIN−TO−SOURCE RESISTANCE (W)
125 °C85 °C25 °C−40 °C
125 °C
85 °C
25 °C
−40 °C
35.5
36.0
NUD3124, SZNUD3124
www.onsemi.com
9
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T____
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
NUD3124, SZNUD3124
www.onsemi.com
10
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE N
23
456
D
1
e
b
E
A1
A
0.05 (0.002)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05.
C
L
0.7
0.028
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.95
0.037
ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.90 1.00 1.10 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.25 0.37 0.50 0.010
c0.10 0.18 0.26 0.004
D2.90 3.00 3.10 0.114
E1.30 1.50 1.70 0.051
e0.85 0.95 1.05 0.034
0.20 0.40 0.60 0.008
0.039 0.043
0.002 0.004
0.015 0.020
0.007 0.010
0.118 0.122
0.059 0.067
0.037 0.041
0.016 0.024
NOM MAX
2.50 2.75 3.00 0.099 0.108 0.118
HE
− −
L
0°10°0°10°
q
q
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NUD3124/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
◊
