SMALL-SIGNAL TRANSISTORS PLASTIC (continued) Central Collector 800 MW TO-92 The transistors listed in this table have been designed to provide power dissipation. These devices are listed in order of decreasing breakdown voltage (BVCEO). BYVCEO Ic VoE(sat) fT Device Volts Amp hee @ Ie Volts @ Ic @ tg MHz @ Ic PIN Type Min. Cont. Min. mA Max. | mA mA Min. mA OUT NPN BF420 300 0.1 40 25 2.0 20 2 60 10 ECB BF422 250 0.1 50 25 2.0 20 2 60 10 ECB BC639 80 1.0 40 150 0.5 500 50 60 Jo ECB BC637 60 1.0 40 150 0.5 500 50 60 10 ECB BC635 45 1.0 40 150 0.5 500 50 60 10 ECB BC368 20 1.0 60 1000 0.5 1000 100 65 10 ECB PNP BF421 300 0.1 40 25 20 | 20 2 60 10 ECB BF423 250 0.1 50 25 2.0 20 2 60 10 ECB BC640 80 1.0 40 150 0.5 500 50 60 10 ECB BC639 60 1.0 40 150 0.5 500 50 60 10 ECB BC636 45 1.0 40 150 0.5 500 50 60 10 ECB BC369 20 1.0 60 1000 0.5 1000 100 65 10 ECB Telecom Transistors (TO92) These devices are special product ranges intended for use in Telecom application which require an excellent long term reliability. PDmW HFE Fr NPN PNP BVCEO 25C IC (mA) ~ Min PIN DEVICES DEVICES v Amb Cont min max IC (mA) VCE (V) MHz OUT P2N2222 30 625 600 75 _ 10 10 250 CBE P2N2222A 40 625 600 75 10 10 300 CBE P2N2907 40 625 600 75 _ 10 10 200 CBE P2N2907A 60 625 600 100 10 10 200 CBE (1)PBF259,S 300 625 500 25 _ 1 10 40 EBC (1)PBF259R,RS 300 625 500 25 _ 1 10 40 CBE (2)PBF493,S 300 625 500 40 1 10 40 EBC (2)PBF493R,RS 300 625 500 40 _ 1 10 40 CBE (1) S version, HFE Min 60 @ Ic = (2) S version, HFE Min 40 @ Ic = 20 mA, VcE = 10V. 0,1 mA, VCE =1V. MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-41