UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R206-006,B
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC MMBTA13 is a Darlington transistor.
FEATURES
*Collector-Emitter Voltage: VCES = 30V
*Collector Dissipation: Pc (mas) = 350 mW
MARKING
SOT-23
1
2
3
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCES 30 V
Emitter-Base Voltage VEBO 10 V
Collector Dissipation Pc 350 mW
Collector Current Ic 500 mA
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNIT
Collector-Emitter Breakdown Voltage BVCES Ic=100µA,IB=0 30 V
Collector Cut-Off Current ICBO VCB=30V,IE=0 100 nA
Emitter Cut-Off Current IEBO VEB=10V,Ic=0 100 nA
DC Current Gain hFE VCE=5V,Ic=100mA 10000
Collector-Emitter Saturation Voltage VCE(sat) Ic=100mA,IB=0.1mA 1.5 V
Base-Emitter on Voltage VBE(on) VCE=5V,Ic=100mA 2.0 V
Current Gain Bandwidth Product fT VCE=5V,Ic=10mA,
f=100MHz
125 MHz
Pulse test: Pulse Width<300µs, Duty Cycle=2%
1M
UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R206-006,B
TYPICAL CHARACTERISTICS
I(tot)
mA
0.1 10
100k
Current Gain & Collector Current
1 100 1000
10k
Collector Current (mA)
1000k
hFE
hFE@VCE=5V
I(tot)
mA
0.1 10
1000
On Voltage & Collector Current
1 100 1000
100
Collector Current (mA)
10000
On Voltage (mV)
VBE(on)@VCE=5V
I(tot)
mA
10
100
Cutoff Frequency & Collector Current
1 100 1000
10
Collector Current (mA)
1000
Cutoff Frequency (MHz)
VCE=5V
I(tot)
mA
10
1000
Saturation Voltage & Collector Current
1100
1000
100
Collector Current (mA)
10000
Saturation Voltage (mV)
VBE(sat)@IC=100IB
VCE(sat)@IC=100IB
I(tot)
mA
10
Capacitance & Reverse-Biased Voltage
1 100
1
Reverse-Biased Voltage(V)
10
Capacitance (pF)
Cob
I(tot)
mA
10
Safe Operating Area
1 100
1
Forward Voltage-VCE(V)
10
Collector Current -Ic (mA)
PT=100ms
1000
100
PT=1s
PT=1ms
UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 3
QW-R206-006,B
I(tot)
mA
25
Power-Dissipation
vs Ambient Temperature
050
0
PD-Power Dissipation(W)
10075 125 150
0.25
0.5
0.75
1
Temperature (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
