Preliminary AES1A THRU AES1J 175mA. Super Fast Surface Mount Rectifiers Voltage Range 50 to 600 Volts Current 175 mAmpere SOD-323F Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain relief, Ideal for automated placement Easy pick and place Superfast recovery time for high efficiency Glass passivated chip junction High temperature soldering: O 260 C/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-O Mechanical Data Cases: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Packing: tape per E1A STD RS-481 Weight: 0.01 gram Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol AES AES AES AES AES AES AES AES Units Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage VRRM VRMS VDC Marking Code 1A 1B 50 35 50 100 150 200 300 400 500 600 70 105 140 210 280 350 420 100 150 200 300 400 500 600 1C EA EB EC Maximum Average Forward Rectified Current O I(AV) @85 C O @ 25 C I(PEAK) Peak Forward Surge Current, 8.3 ms Single IFSM Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage O IF=175mA @ 85 C O @ 25 C Maximum DC Reverse Current @ TA =25 IR at Rated DC Blocking Voltage Maximum Reverse Recovery Time ( Note 1 ) Trr Typical Junction Capacitance ( Note 2 ) Maximum Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range Cj RJA RJL TJ TSTG 1D 1F ED EF 1G EG 1H EH 1J V V V EJ 175 mA 625 20 A 1.25 1.45 V 0.1 uA 50 5 85 35 -40 to +85 -40 to + 85 nS pF /W Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. P.C.B. Mounted on 0.2 x 0.2"(5.0 x 5.0mm) Copper Pad Area. 03.02.2005/rev. a