AP1332GEU RoHS-complaint Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D Simple Gate Drive Small Package Outline BVDSS 20V RDS(ON) 600m ID 600mA S SOT-323 G Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness. D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Unit 20 V +8 V 3 600 mA 3 470 mA Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current 2.5 A PD@TA=25 Total Power Dissipation 0.35 W Linear Derating Factor 0.003 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 360 /W 1 201204255 AP1332GEU Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 20 - - V - 0.02 - V/ VGS=4.5V, ID=600mA - - 600 m VGS=2.5V, ID=300mA - - 2 BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=0V, ID=250uA 2 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.25 V gfs Forward Transconductance VDS=5V, ID=600mA - 1 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 C) VDS=16V ,VGS=0V - - 10 uA Gate-Source Leakage VGS=+8V, VDS=0V - - +30 uA ID=600mA - 1.3 2 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=16V - 0.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 0.5 - nC VDS=10V - 21 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=600mA - 53 - ns td(off) Turn-off Delay Time RG=3.3,VGS=5V - 100 - ns tf Fall Time RD=16.7 - 125 - ns Ciss Input Capacitance VGS=0V - 38 60 pF Coss Output Capacitance VDS=10V - 17 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 12 - pF Min. Typ. Max. Unit - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage Test Conditions IS=300mA, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test. 3.Surface mounted on FR4 board, t 10 sec. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP1332GEU 2.5 2.5 5.0V 4.5V 3.5V T A =25 C ID , Drain Current (A) 2.0 o 5.0V 4.5V 3.5V T A = 150 C 2.0 ID , Drain Current (A) o 1.5 2.5V 1.0 V G =2.0V 1.5 2.5V 1.0 V G =2.0V 0.5 0.5 0.0 0.0 0.0 0.5 1.0 1.5 2.0 0.0 2.5 0.5 1.0 1.5 2.0 2.5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 1.8 I D =0.6A V G =4.5V I D = 0.4 A o T A =25 C 1.6 Normalized RDS(ON) RDS(ON) (m) 800 600 1.4 1.2 1.0 400 0.8 0.6 200 2 3 4 -50 5 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 1.0 0.8 Normalized VGS(th) 1.5 IS(A) 0.6 T j =150 o C T j =25 o C 0.4 1.0 0.5 0.2 0.0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP1332GEU 10 f=1.0MHz 100 V DS =10V V DS =12V V DS =16V 6 C iss C (pF) VGS , Gate to Source Voltage (V) I D =0.6A 8 4 C oss 2 C rss 0 10 0.0 0.4 0.8 1.2 1.6 2.0 1 2.4 3 5 7 9 11 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 Normalized Thermal Response (Rthja) 1 100us ID (A) 1 1ms 0.1 10ms o T A =25 C Single Pulse 100ms DC Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4