Preliminary Specification,
Rev 03/30/2005
MAPRST2729-170M
RADAR PULSED POWER TRANSISTOR
170 Wpk, 2700 - 2900 MHz, 100μs Pulse Width, 10% Duty Cycle
FEATURES OUTLINE DRAWING
• Designed for ATC Radar Applications
• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metallization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package
ABSOLUTE MAXIMUM RATINGS AT 25°C
Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 65 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 27 A
Power Dissipation @ +25°C PD TBD W
Storage Temperature TSTG -65 to +200 °C
Junction Temperature TJ 200 °C
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter Symbol Min Max Units Test Conditions
Collector-Emitter Breakdown
Voltage BVCES 65 - V IC=50mA
Collector-Emitter Leakage
Current ICES - 15 mA VCE=36V
Thermal Resistance RTH - .25 (TBD) °C/W VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
Power Output Pout 170 - Wpk VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
Power Gain GP 8.5 - dB VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
Collector Efficiency ηC 40 - % VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
Input Return Loss RL 10 - dB VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
Load Mismatch Stability VSWR-S - 1.5:1 - VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
Load Mismatch Tolerance VSWR-T - 2:1 - VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
BROADBAND TEST FIXTURE IMPEDANCE
F (MHz) Z IF (Ω) Z OF (Ω)
2700 (TBD) (TBD)
2800 (TBD) (TBD)
2900 (TBD) (TBD)
M/A-COM, RF POWER INNOVATIONS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501
(310) 320-6160 • FAX (310) 618-9191
M/A-COM RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE.
