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IRF820A
SMPS MOSFET
HEXFET® Power MOSFET
lSwitch Mode Power Supply (SMPS)
lUninterruptable Power Supply
lHigh speed power switching
Benefits
Applications
lLow Gate Charge Qg results in Simple
Drive Requirement
lImproved Gate, Avalanche and dynamic
dv/dt Ruggedness
lFully Characterized Capacitance and
Avalanche Voltage and Current
lEffective COSS specified (See AN 1001)
VDSS RDS(on) max ID
500V 3.0Ω2.5A
Typical SMPS Topologies:
l Two transistor Forward
l Half Bridge and Full Bridge
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 2.5
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 1.6 A
IDM Pulsed Drain Current 10
PD @TC = 25°C Power Dissipation 50 W
Linear Derating Factor 0.4 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 3.4 V/ns
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
SDG
PD- 93773A
Notes through are on page 8
TO-220AB
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Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 1.4 ––– ––– S VDS = 50V, ID = 1.5A
QgTotal Gate Charge –– – –– – 17 ID = 2.5A
Qgs Gate-to-Source Charge ––– ––– 4.3 nC VDS = 400V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 8.5 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 8 .1 ––– VDD = 250V
trRise Time ––– 12 ––– ID = 2.5A
td(off) Turn-Off Delay Time ––– 16 ––– RG = 21Ω
tfFall Time ––– 13 ––– RD = 97Ω,See Fig. 10
Ciss Input Capacitance ––– 340 ––– VGS = 0V
Coss Output Capacitance ––– 53 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 2 .7 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 490 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 15 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 28 ––– VGS = 0V, VDS = 0V to 400V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 140 mJ
IAR Avalanche Current––– 2.5 A
EAR Repetitive Avalanche Energy––– 5.0 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 2.5A, VGS = 0V
trr Reverse Recovery Time ––– 330 500 n s TJ = 25°C, I F = 2.5A
Qrr Reverse RecoveryCharge ––– 760 1140 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
2.5
10 A
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 2.5
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
Thermal Resistance
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 50 0 ––– –– – V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.60 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 3.0 ΩVGS = 10V, ID = 1.5A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.5 V VDS = VGS, ID = 250µA
––– ––– 25 µA VDS = 500V, VGS = 0V
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– –– – 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V
IGSS
IDSS Drain-to-Source Leakage Current
IRF820A
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
1 10 100
20
µ
s PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.01
0.1
1
10
4.0 5.0 6.0 7.0 8.0 9.0
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
2.5A
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
10 100 1000 10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Sin
g
le Pulse
T
T = 150 C
= 25 C
°°
J
C
V , Drain-to-Source Volta
g
e (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0 4 8 12 16
0
5
10
15
20
Q , Total Gate Char
g
e (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
2.5A
V = 100V
DS
V = 250V
DS
V = 400V
DS
110 100 1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
IRF820A
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Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
1.1A
1.6A
2.5A
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
0.0 0.5 1.0 1.5 2.0 2.5
IAV , Avalanche Current ( A)
550
600
650
700
V DSav , Avalanche Voltage ( V )
IRF820A
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETPower MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRF820A
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LE AD ASSIGNM E N T S
1 - G A TE
2 - D R AIN
3 - SO U R C E
4 - D R AIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014 ) M B A M
4
1 2 3
NOTES:
1 D I MENS ION I NG & T O L ER ANCIN G P ER A NS I Y1 4.5 M, 1 982 . 3 OUT LIN E CONFO RMS TO J E DE C O UTLINE TO-22 0 AB .
2 CO N T RO L LING DIM ENSIO N : INC H 4 HE A T SINK & LE AD ME ASUR E M E N T S D O N OT INCLUDE BURR S .
Part Marking Information
TO-220AB
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
PART NUM BER
INTERNATIONAL
R E C TIFIER
L O G O
EXAMPLE : THIS IS AN IRF1010
WITH ASSE MBLY
L O T C ODE 9B 1M
ASSEM BLY
L O T CO D E
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
9246
IRF1010
9B 1 M
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 2.5A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L = 45mH
RG = 25Ω, IAS = 2.5A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645
8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 5/00