High Conductance Low Leakage Diode
Sourced from Process 1T.
MMBD1701/A / 1703/A / 1704/A / 1705/A
MARKING
MMBD1701 85 MMBD1701A 85A
MMBD1703 87 MMBD1703A 87A
MMBD1704 88 MMBD1704A 88A
MMBD1705 89 MMBD1705A 89A
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
CONNECTION DIAGRAMS
3
21
3
21
3
21
3
12 NC
1703
1704
1701
1705
85
3
12
Symbol Parameter Value Units
WIV Workin g Inverse Voltage 20 V
IOAverage Rectified Current 50 mA
IFDC Forwa rd Current 150 mA
ifRecurrent Peak Forward Current 150 mA
if(surge) Peak Forward Surge Curren t
Pulse width = 1.0 second 250 mA
Tstg Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature 150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics TA = 25°C unless otherwise noted
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Symbol Characteristic Max Units
MMBD1701/A /1703/A-1705/A*
PDTotal D evice Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
SOT-23
3
1
2
Discrete POWER & Signal
Technologies
MMBD1701/A / 1703/A / 1704/A / 1705/A
1997 Fairchild Semiconductor Corporation MMBD1700 Rev. B
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
BVBreakdown Voltage IR = 5.0
µ
A30 V
IRReverse Current VR = 20 V 50 nA
VFForward Vol tage IF = 10
µ
A
IF = 100
µ
A
IF = 1.0 mA
IF = 10 mA
IF = 20 mA
IF = 50 mA
420
520
640
760
810
0.89
500
610
740
880
950
1.1
mV
mV
mV
mV
mV
V
CODiode Capacitance VR = 0, f = 1.0 MHz 1.0 pF
TRR Reverse Recovery Time
MMBD1701-1705
MMBD1701A-1705A
IF = IR = 10 mA IRR = 1.0 mA,
RL = 100Ω
IF = IR = 10 mA IRR = 1.0 mA,
RL = 100Ω
700
1.0
pS
nS
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
1 2 3 5 10 20 30 50 100
40
50
60
I - REVERSE CURRENT (uA)
V - REVERSE VOLTAGE (V)
R
R
Ta= 25°C
REVERSE CUR RENT vs REVERSE VOLTAGE
IR - 1 to 22 V
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase i n Temperature
1 2 3 5 10 20
0
5
10
V - REVERSE VOLTAGE (V)
I - REVERSE CURRENT (nA)
R
R
Ta= 25°C
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
1 2 3 5 10 20 30 50 100
300
350
400
450
500
550
600
I - FORWARD CURRENT (uA)
V - FORWARD VOLTAGE (mV)
F
F
Ta= 25°C
FORWA RD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
0.1 0.2 0.3 0.5 1 2 3 5 10
550
600
650
700
750
800
850
I - FORWARD CURRENT (mA)
V - FORWARD VOLT AGE (mV)
F
F
Ta= 25°C
IR
High Conductance Low Leakage Diode
(continued)
MMBD1701/A / 1703/A / 1704/A / 1705/A
Typical Characteristics (continued)
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 - 200 mA
10 20 30 50 100 200
0.8
1
1.2
1.4
1.6
I - FORWARD CURRENT (mA)
V - FORWARD VOLTAGE (V)
F
F
Ta= 25°C
CAPACITANCE v s REVERSE CURRENT
VR - 0 to 15 V
02468101214
0.5
0.6
0.7
0.8
0.9
1
REVERSE VOLTAGE (V)
CAPACITANCE (pF)
Ta = 25° C
Power Dissipation,
Average Rectified Current (Io),
Forward Current (I ) & Ambient Temperature (T )
0 255075100125150175
0
50
100
150
200
250
T - AMBIENT TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
P - POWER DISSIPATION - mW
I - CONTINOUS FORWA RD CURRENT - mA
o
D
R
A
F
Io - AVERAGE RECTIFIED CURRENT - mA
A
D
Power Derating Curve
0 25 50 75 100 125 150 175 200
0
50
100
150
200
250
300
350
Io - AVERAGE TEMPERATURE
P - POWER DISSIPATION (mW)
D
SOT-23
DO-7
MMBD1701/A / 1703/A / 1704/A / 1705/A
High Conductance Low Leakage Diode
(continued)
