PCP (Power Chip Pack) Transistor Se SANYO ries ake Features * Very small size making it possible to provide high-density, small-sized hybrid ICs. * Various packing of devices are available to meet automatic assembly requirements. * High reliability and stable quality *A full lineup for various uses. For PNP, (-) sign is omitted. PC : Mounted on ceramic board(250mm?x0. 8mm). Case For TRs 1:Base 2:Collector 3:Emitter For Diode DCH10 DCG10 1:Cathode 1:Anode 2:Anode 2:Cathode 3:Cathode 3:Anode Out l 4.5 + he ine (Cunit:nm) 15 Absolute Maximum Electrical Characteristics/Ta=25'C Rat ings/Ta=25'C Type No. Main Use ue T P v Marking Related CEO} C C Vor Io bee Io I, CE(sat) Type No. (VW) | (A) W)) W) | (A (A) | (mA) typ (V) ae Low-Saturation Vol tage TRs 2SA1882/2SC4984 C SH 15] 1.5] 1.3 50m} 140~560| 5m 0.5 10m Al/ct | 1701/4481 25B1118/2SD1618 SW driver 150.71 1.3 50m! 140~560|__5m/ 0.5 15m/10m | BA/DA | B808/Di012 25B1119/2SD1619 variver 25] 111.3 50m] 100~560/ 0.5) 50 | _0.15/0.1 | BB/DB = 2SB1120 Strobe( - 3V) 10] 2.5[ 1.3 0.5} 100~560| 1.5! 150 0, 25 BC Ba93 25D1620 tro 10 3[ 1.3 3{ min 140 31 60 0.3 DC D879 2SA2011/2SC55640 12/15{ 6! 1.3 0.5/[ 200~560! 1.5! 30 0, 12 AR/FA _ | CPH3106/3206 25A2012/2SC556050 30/5! 1.3 0,5] 200~560] 1.5[ 30 | 140m/125m [~ AS/FB _|CPH3109/3209 28A2013/28C55668 50! 4. 1.3 0,5] 200~560 1] 50 { 105m/85m AT/FC _{CPH3105/3205 2SA2014/2SC55670| gh Se 5] ol 1.3 0.5| 200~560 3] 60 | 0.11/0.12 | AU/PO (CPH3107/3207 2SA2015/2Sc55689| 18" current 30/8] 1.3 0.5} 200~560[ 4] 200 | _0.2/0.18 | AV/PR |CPH3110/3210 2SA2016/2SC55696| @:MBIT processes} 50/71 1.3 0.5} 200~560[_3.5| 175 | 0, 23/0. 16 AW/FF _{CPH3112/3212 25B1121/2SD16210 25|_ 2] 1.3 Q.1{ 100~560{ 1.5] 75 | 0,35/0.18 | BD/DD B926/D1246 25B1122/2SD16220 50 111.3 0,1] 100~560, 0.5[ 50 | 0.18/0.12 | BE/DE B764/D863 2SB1123/28D1623@ 50 2) 1.3 2 {0.1} 100~560 1] 50 0.3/0, 15 BE/DF B892/D1207 25B1124/2SD16240 50/3 1.5 0.1] 100~560 2/100 | 0,35/0.19 | BG/DG | B985/D1347 25A1896 20] 2.5! 1.3 0.5; 140~4001 1.5] 30 0, 22 AM = 2SB1302 Strobe converters 20 5} 1.3 0.5} 100~400 3} 60 0.25 BJ Bl127 2801623 20,51 4.5 0.5] 120~560[ 3/60 | max 0.5 DK D826 28B1323/2SD19974| 30/3 1s 0.5] min 70 1] 50 [ 0.18/0.12 BK/DO = 25B1324/2SD1998# Hoon current W sot 3118 0.5] min 70 2] 100 | _0.25/0.2 | BL/DM = 25B1325/2SD1999% ' 20/4. :1.5 0.5| min 70 3[ 150 | 0,2570.25 | BM/DN = 25B1394/2SD2099%| *:With Damper 30/3) 1.5 0.5} min 70 1] 50 [- 0.18/0.12 | BN/DL = 2581396 diode 10/3 1.3 0.5| 140~560) 1.5] 30 0. 22 BO BI395 2SB1397/2SD2.100% 20; 2/1.3 0.5! min 70 1] 50 | 0, 25/0. 25 BP/DP = a&e High-Voltage TRs 2SA1415/2SC3645 160| 0.14) , 10m 50m} 5 | 0, 14/0. 07 AA/CA | A1209/C2911 2SA1416/25C3646 100 1 0.1 0.4| 40 0.2/0.1 AB/CB_ | _A1592/C4134 2SA1417/2SC3647 |. gh-voltage sy | 200, 211.5 | 5 | 0.1] 100~400 1] 100 [ 0.92/0.13 | AC/CC | _A1593/C4135 25A1418/28C3648 8 160} 0.7| 1.3 0.1 0.25] 25 | 0.2/0.12 [| AD/CD | A1248/c3116 28A1419/2SC3649 160} 1.5] 1.5 0.1 0.5] 50 0. 2/0, 13 AE/CE | A1249/3117 2SA1740/25C4548 400) 0.2) 1.3 | 10 | 50m) 60 ~200/ 50m[ 5 | max 0.8/0.6 | AK/CN | A1699/C4002 ae Darlington TRs 28B1125/2SD1625 50! 0.7] 1.3 50m} min 5000} 0.1] 0,1 0.8/0.8 BHD | B888/D1111 2SB1126/2SD1626 Driver 50] 1.5) 5. | 2 [0.5] min 4000] 0.5] 0.5 | 0.9/0.9 BI/DI B865/D1153 2501627 er 0.5] min 4000 0,610. 15 1.5 DJ = 28D2261 60/25] * 1.0] min 2000) 1.0) 2 1.5 DR = ate Hi eh-hFE TRs 2SC3650 . . 25| 1.2] 1.5 0,5{800+3200| 0.5] 10 0.12 CF 3070 2SC3651 Driver low noise-ogrpst qa] 5 10m/500~2000} 0.1] 2 0.15 CG C3071 ale Hi sh-Vol tage,HF TRs 2SA1969 For high freq. 10] 0.4; 1.3] 5]. 50m] 20~120 | 0.21 20 0.4 AQ ~ medium power amp 28C5347 and medium curren 12; 0.15) 1.3 5 50m) 60~270 | {T=4, 7GHz, NF=1. 8dB(typ) CZ - 28C5551 high-speed SW 30] 0.3} 1.3{ 5 | 50m] 90~270} soml 5 0,15 EB CPH6002 25C4272 27MHz CB j 45 1} 1.3) 5 | 6.5) 60~320 | 0.5! 50 0.2 CH 2314 transceiver Driver 2804673 Wide-band amplifiers 12] 0.1. 0.8! 10 20m} 40~200 cob=1. 1. cre=0. 75pF) co C3775 28C5415 HF genera! low 12] 0.1] 0.8] 5 | 30ml 90~270 cob=1. 1, re=0. 85pF) EA = noise amp 25A1575/2SC4080 Wideband 2 200] 0.1] 1.3[ 10 | 10m[40~320 | 20m] 2 [ maxl.0/10 AF/CL {A1406/C3600 2SA1724 video out ne 20] 0.3] 1.3] 5 | 50m) 15~100 | 0.11 10 0.4 AJ = 2SC4504 P 20; 0.3) 1.3. 5 | 50m) 40~200 | 0.11 10 0.15 CM C4271 atc eat \ ' vR 10 | IFM |IF VF max!VR IR max|JF trr max PB t hod ery fast at e common aH witching 200V; 1A | 2A u | 1, 3| 2009 10g |1A 300nS PC TAnode common In addition to these, the High-SW speed TR, FET, SBD diode (PCP) are available. These specifications are subject to change without notice. SANYO Electric Co., Ltd. Semiconductor Company, TR Division. Mi 7997076 OO24b20 7TT 35 MT990803TR