2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features * * * Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCEO Parameter Collector-Emitter Value 30 Unit Vdc VCBO VEBO Collector-Base Voltage 55 Vdc Emitter-Base Voltage 3.5 Vdc IC Collector Current 400 mA 5.0 28.6 Watts mW/ C Thermal Data P D Total Device Dissipation Derate above 25 C 2N3866.PDF 10-28-02 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N3866 / 2N3866A ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC (off) Symbol BVCER BVCEO BVCBO BVEBO ICEO ICEX Test Conditions Value Min. Typ. Max. Unit Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 10 ohms) 55 - - Vdc Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) 30 - - Vdc Collector-Base Breakdown Voltage (IE = 0, IC = 0.1 mAdc) 55 - - Vdc Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 3.5 - - Vdc Collector Cutoff Current (VCE = 28 Vdc, IB = 0) - - 20 A Collector Cutoff Current (VCE = 55 Vdc, VBE = 1.5 Vdc) - - 100 A 5.0 10 25 - 200 200 - - - 1.0 Vdc (on) HFE VCE(sat) DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) Both (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 20 mAdc) DYNAMIC Symbol fT COB Test Conditions Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) Value 2N3866 2N3866A Min. Typ. Max. Unit 500 800 800 - - MHz - 2.8 3.5 pF 2N3866.PDF 10-28-02 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N3866 / 2N3866A FUNCTIONAL Symbol Test Conditions GPE Power Gain Pout Value Test Circuit-Figure 1 Pin = 0.1 W, VCE = 28Vdc f = 400 MHz, TC = 25 C Test Circuit-Figure 1 Pin = 0.1 W, VCE = 28Vdc f = 400 MHz, TC = 25 C Test Circuit-Figure 1 Pin = 0.1 W, VCE = 28Vdc f = 400 MHz, TC = 25 C Output Power Collector Efficiency C 8-60 L1 Typ. Max. Unit 10 - - dB 1.0 - - Watts 45 - - % LS POUT (RL=50 OHMS) RFC 8-60 PIN (R S=50 OHMS) Min. RFC 0.9-7 3-35 12 RFC 5.6 OHMS 1000 VCE = -28V Figure 1 - 400 MHz RF AMPLIFIER CIRCUIT FOR GPE, POUT, AND EFFICIENCY SPECIFICATIONS. L1: 2 TURNS No. 18 wire, 1/4" ID, 1/8" long Ls: 2 3/4 TURNS No. 18 wire, 1/4" ID, 3/16" long Capacitor values in pF unless otherwise indicated. Tuning capacitors are air variable . 2N3866.PDF 10-28-02 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N3866 / 2N3866A 400 TO-39 2N5109 NPN 200 3 10 15 12 1200 20 400 20 400 TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400 POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 16 500 SO-8 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1300 30 400 TO-72 2N5179 NPN 200 4.5 1.5 6 17 900 1 12 50 POWER MACRO MRF553T NPN 175 1.5 11.5 50 12.5 16 500 TO-72 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40 TO-39 MRF607 NPN 175 1.75 11.5 50 12.5 16 330 TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150 TO-39 2N6255 NPN 175 3 7.8 50 12.5 18 1000 TO-72 MRF904 TO-72 2N5179 NPN 200 TO-72 2N6304 NPN 450 5 2 5 MACRO T BFR91 NPN 500 1.9 2 5 6 12 50 MA C R O X MRF559 NPN 512 0.5 10 65 7.5 16 150 MA C R O X MRF559 NPN 512 0.5 13 60 12.5 16 150 TO-39 2N3866A NPN 400 1 10 45 28 30 400 M R F 3 8 6 6 , R 1 , R 2 NPN 400 1 10 45 28 30 SO-8 NPN 450 1.5 5 6 11 11 Ftau (MHz) Type Device Packag Device GPE VCC 20 4000 15 50 12 35 2.6 15 100 NPN 500 2 10 10 14.5 500 NPN 500 2 50 10 15.5 17.8 5000 MACRO X MRF581A NPN 500 2 50 10 14 15 5000 Macro BFR90 NPN 500 2.4 2 10 15 18 5000 400 TO-72 BFY90 NPN 500 2.5 2 5 20 TO-72 MRF914 NPN 500 2.5 5 10 MACRO X MRF581 NPN 500 2.5 50 10 11 50 12.5 16 400 POWER MACRO MRF555T NPN 470 1.5 11 50 12.5 16 400 MA C R O X MRF559 NPN 870 0.5 6.5 70 7.5 16 150 MA C R O X MRF559 NPN 870 0.5 9.5 65 12.5 16 150 SO-8 MRF8372,R1,R2 NPN 870 0.75 8 55 12.5 16 200 POWER MACRO MRF557 NPN 870 1.5 8 55 12.5 16 400 POWER MACRO MRF557T NPN 870 1.5 8 55 12.5 16 400 15 200 15 200 15 30 1300 15 50 15 4500 12 40 15 17.8 5000 16 200 TO-39 MRF586 NPN 500 3 90 15 11 14.5 4500 2.2 17 200 MRF951 NPN 1000 1.3 5 6 14 17 8000 0.45 10 100 MACRO X MRF571 NPN 1000 1.5 10 6 10 8000 1 10 70 MACRO T BFR91 NPN 1000 2.5 2 5 8 11 5000 1 12 35 MACRO T BFR90 NPN 1000 3 2 10 10 12.5 5000 1 15 30 TO-39 MRF545 PNP 14 1400 2 70 400 TO-39 MRF544 NPN 13.5 1500 1 1 1 2 2 3 8 5 1 4 3 2N3866.PDF 10-28-02 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Macro T Visit our website at WWW.ADVANCEDPOWER.COM contact our factory direct. Macroor X 70 400 RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 4 1 MACRO X RF (Low Power PA / General Purpose) Selection 2 30 1 1 BFR96 1.5 15 1400 5000 MRF5812, R1, R2 NPN 470 1 14 SO-8 MRF555 3.5 16.5 MACRO T POWER MACRO Ccb(pF) BVCEO IC max (mA) 20 12 Gu Max (dB) 12 50 Freq (MHz) NF (dB) NF IC (mA) NF VCE GNF (dB) 60 10 BVCEO 18 1 IC max (mA) 0.15 NPN 175 Efficiency (%) NPN 175 2N4427 GPE (dB) Pout MRF4427, R2 Type SO-8 TO-39 Package GPE Freq (MHz) RF Low Power PA, LNA, and General Purpose Discrete Selector Guide Power SO-8 2N3866 / 2N3866A 2N3866.PDF 10-28-02 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.