TOSHIBA 1$$352 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1$$352 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm @ Small Package @ Low Forward Voltage > VF (3)=0.98V (Typ.) x! 402 @ Fast Reverse Recovery Time : tyy=1.6ns (Typ.) $ oa @ Small Total Capacitance : Cp=0.5pF (Typ.) 8 aol x MAXIMUM RATINGS (Ta = 25C) 5 +h 2 020.05 CHARACTERISTIC SYMBOL | RATING | UNIT 1 Maximum (Peak) Reverse Voltage VRM 85 Vv | foathis fots*8i Reverse Voltage VR 80 Vv oo Maximum (Peak) Forward Current Ipm 200 mA 3 "3 Average Forward Current Io 100 mA | Surge Current (10ms) Ifpom 1 A Power Dissipation P 200 (*) | mW Junction Temperature Tj 125 C Storage Temperature Range Tstg 55~125 C USC * woe JEDEC (*) Mounted on a glass epoxy circuit board of 20 X 20mm, pad dimension of 44mm. EIAJ _ TOSHIBA 1-1E1A ELECTRICAL CHARACTERISTICS (Ta = 25C) Weight : 0.004g CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT VF) jip=imA 0.62; Forward Voltage VF(2) |lp=10mA 0.75 | Vv VF(3) [Ip=100mA | 0.98 | 1.20 Reverse Current RG) |VR=30V = Ot pA TR (2) VR=80V _ _ 0.5 Total Capacitance Cr VR=0, f=1MHz _ 0.5 | 3.0 | pF Reverse Recovery Time trr Ip=10mA, Fig.1 1.6 4.0 ns (TOP VIEW) MARKING INPUT OUTPUT WAVEFORM WAVEFORM LNPUT 0.014F DUT OUTPUT 0 Ip=10mA 7 ~6V io I (*)SAMPLING *R 0.11R 50ns OSCILLOSCOPE (RIN =500) er PULSE GENERATOR (RouT=500) 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can | malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-05-07 = 1/2 TOSHIBA 188352 Ip ~ VE IR - VR 16 2 ~ s S 4 ad fe es es 5 a 100n 2 Tax 100C 2 3 g | < ta 2 a 0.10 o 0.4 o8 1.2 1.6 2.0 Oo 10 20 30 40 50 60 70 80 90 FORWARD VOLTAGE Vp (V) REVERSE VOLTAGE Vr () Cr -. VR Cr (pF) CAPACITANCE 0.1 0.3 1 3 10 30 106 REVERSE VOLTAGE Vp (V) 961001 EAA2" @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-05-07 2/2