Aiittron DEVICES, INC. | PRODUCT CATALOG ne . oe N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS 6OOV , ZOA ; O . 350 PARAMETER SYMBOL UNITS Orain-source Volt.(1) VOSS 600 Vde SDF 2ZON60 JEA Geesicouy fijes [voor [soo Te |] SDF 2ONGO JEB Coniinueus) 3 ves +20 ve} SDFLONGO JEC , Cre'e sch Continuous ID 20 Ade SDF ZON6GO JED Drain Current Pulsed(3). 10M 80 A : Total Power Dissipation PD 300 Wt peresase || afar ff Se Operating & Storage Temp. | TJ/Tsig -5S TO +150 c ; RUGGED HARA E TION Thermal Resistance Rthdec 0.42. C/W @ CERAMIC EYELETS Max.Lead temperature TL 300 *c @ LEAD BENDING OPTIONS @ COPPER CORED S2 ALLOY PINS ELECTRICAL CHARACTERISTICS Tc=25ec (MESS.OTHER-,) |/@LOW IR LOSSES @ LOW THERMAL RESISTANCE PARAMETER _|SYMBOL| TEST CONDITIONS |MINITYP|MAXIUNITS!! @ GOTIONAL MIL-S-19500 Drain-source VGS=0V Breakdown Volt .|V(BRJ0SS 1D=250 WA 600; - - V SCREENING Gate Threshold lves(TH)|VDS=VGS 1D=250 HA [2.0] - [4.5] V SCHEMATIC Gate Source = _ (0) [TERMINAL CONNECTIONS Leakage IGSS |VGS=420 V - +100] nA G 4 Zero Gate VDS=MAX .RAT ING VGS=0 - - 250 HA <q ' . = 1] GATE 1 | ORAIN Voltage Drain | IDSS |vpS=0.8 MAX.RATING |. | _ 1000] yA |] 31DRA eneane urren VGS=0 TU=125C | 2 6) IN 2 ) ry Static Drain- VGS#10 V J 0 3}SOURCE | 3] GATE Resistance(1). [oc] |D=10A - | > |-35 STANDARD BEND JEA Forward Trans~ fs |VOS 2 SOV 9.0]: - - {s(v) CONFIGURATIONS Conductance (2)| 9 1DS=10A . : JEC Input Capacitance| C!ISS 7 - {4500} - pF Output Capacitance| COSS VGS=0V VOS=25 V - }550| - pF Reverse Transfer cRSS f*t.0 MHz - liso] - pF | Capaci tance noon Turn-On Delay {td(on)|ypp=300V. Ze=S0n - }.- {100} ns S 223 Rise Time tr |IDel0A . - | ~ {110} ns Turn-Off Delaylta(off)| We essentiaity inderen- [=| _-|220| ns Fall Time tf dent of operating temp.) [_ 7 105| ns (Gate-Source Pius Qs | - |1es] - | nc ate-Drain) VGS=10V, {D=20A _" U" 12 Gate-Source Qgs VDS*0.8 MAX.RATING 65 nc I 125 Charge (Gate charge is esgent | - este oals Ogd operating femperature). -~ loo] - | nc (CUSTOM BEND OPTIONS AVAILABLE) Charge STANDARD BEND J Fo B se CONFIGURATIONS JED SOURCE-DRAIN DIODE RATINGS & CHARACT.T= 25C ({MLESS_OTHERS ) PARAMETER |SYMBOL| TEST CONDITIONS [MIN[TYP.[MAX.|UNITS Continuous _ Source Current] 1S Boge ee MOSFET ne -}|- 420]A (Body Diode) integral reverse Pulse Source P-N junction recti- Current (Body | ISM |fier (See schematic)| - | - | 80] A Diode) (1) Diode Forward | yop | IF=20A VGS=O0V . -~|- /1.S] v Voltage (2) Tco=+25C Reverse =+2Ge . on Recovery Time tre |Tes*25* C 500 ns IF *#20A R Re- m0) _ _ _ covery Charge | arm |di/dt=100A/ us 8.0 uc |] (CUSTOM BEND OPTIONS AVAILABLE) 1) TU = 25C to 150C. REL .3/93 ta} Pulse test: Pulse Width <300xS, Duty Cycie <2%. 3) Repetitive Rating: Pulse Width limited By Max.junction Temperature. A36 -1