MMBT3906SL PNP Epitaxial Silicon Transistor Features * * * * * * General purpose amplifier transistor Ultra small surface mount package for all types (max 0.43mm tall) Suitable for general switching & amplification Well suited for portable application As complementary type, NPN MMBT3904SL is recommended. Pb free COLLECTOR 3 C 1 BASE E B SOT-923F Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC TJ TSTG 2 EMITTER Marking : AB Ta = 25C unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Range Value Unit -40 -40 -5 200 150 -55 ~ 150 V V V mA C C * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* Ta = 25C unless otherwise noted Symbol Parameter Max Unit PC RJA Collector Power Dissipation, by RJA Thermal Resistance, Junction to Ambient 227 550 mW C/W * Minimum land pad. (c) 2012 Fairchild Semiconductor Corporation MMBT3906SL Rev. 1.1.0 www.fairchildsemi.com 1 MMBT3906SL -- PNP Epitaxial Silicon Transistor August 2012 Symbol Parameter BVCBO BVCEO BVEBO ICEX hFE Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain VCE (sat) VBE (sat) fT Cob Cib td tr ts tf Test Condition IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -30V, VEB(OFF) = -0.3V VCE = 1V, IC = -0.1mA VCE = 1V, IC = -1mA VCE = 1V, IC = -10mA VCE = 1V, IC = -50mA VCE = 1V, IC = -100mA Collector-Emitter Saturation Voltage IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA Base-Emitter Saturation Voltage IC = -10mA, IB = -1mA IC = -50mA, IB = -5mA Current Gain Bandwidth Product VCE = -20V, IC = -10mA, f = 100MHz Output Capacitance VCB = -5V, IE = 0, f = 1MHz Input Capacitance VEB = -0.5V, IC = 0, f = 1MHz Delay Time VCC = -3V, IC = -10mA IB1 = - IB2 = -1mA Rise Time Storage Time Fall Time Min. Max. Unit -50 V V V nA -40 40 -5 60 80 100 60 30 -0.65 300 -0.25 -0.4 -0.85 -0.95 V V V V MHz 7.0 15 35 35 225 75 pF pF ns ns ns ns 250 * DC Item are tested by Pulse Test: Pulse Width300us, Duty Cycle2% (c) 2012 Fairchild Semiconductor Corporation MMBT3906SL Rev. 1.1.0 www.fairchildsemi.com 2 MMBT3906SL -- PNP Epitaxial Silicon Transistor Electrical Characteristics* Ta = 25C unless otherwise noted MMBT3906SL -- PNP Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage 1000 o T J=125 C o T J=75 C Ic=10*Ib Collector-Emitter Voltage,[mV] Vce=1V o T J=25 C Current Gain o T J=-25 C 100 o T J=125 C o T J=75 C o T J=25 C 100 o T J=-25 C 10 1 10 100 10 100 Collector Current, [mA] Collector Current, [mA] Figure 3. Base- Emitter Saturation Voltage Figure 4. Collector- Base Leakage Current 100 Base-Collector Leakage Current,[nA] Ic=10*Ib o Base- Emitter Voltage,[mV] o T J=25 C T J=-25 C 1000 o T J=75 C o T J=125 C 100 10 o T J=125 C 10 o T J=75 C o T J=25 C o T J=-25 C 1 10 100 Figure 5. Collector- Base Capacitance 30 40 Figure 6. Power Derating 12 300 f=1mhz 250 11 Power Dissipation, [mW] Base- Collector Juntion Capacitance, Cob[pF] 20 Base-Collector Revere Voltage, [V] Collector Current, [mA] 9 8 6 200 150 100 50 0 0 5 0 10 50 75 100 125 150 o Ambient Temperature, Ta[ C] Base- Collector Reverse Voltage, V cb[V] (c) 2012 Fairchild Semiconductor Corporation MMBT3906SL Rev. 1.1.0 25 www.fairchildsemi.com 3 MMBT3906SL -- PNP Epitaxial Silicon Transistor Package Dimensions SOT-923F * Case: SOT-923F * Case Material (Molded Plastic): KTMC1060SC * UL Flammability classification rating: "V0" * Moisture Sensitivity level per JESD22-A1113B: MSL 1 * Lead terminals solderable per MIL-STD7502026 /JESD22A121 * Lead Free Plating: Pure Tin (Matte) $ % $ % ; 7239,(: 0D[ (1'9,(: /$1'3$77(515(&200(1'$7,21 6($7,1*3/$1( (1'9,(: 6,'(9,(: ; ; %277209,(: 127(6 $ 7+,63$&.$*('2(6127&203/< 72$1<&855(173$&.$*,1*67$1'$5' % $//',0(16,216$5(,10,//,0(7(56 & ',0(16,216$5(,1&/86,9(2)%8556$1'02/' )/$6+ ' ',0(16,216$1'72/(5$1&(63(5$60(<0 ( '5$:,1*),/(1$0(627)5(9 Dimensions in Millimeters (c) 2012 Fairchild Semiconductor Corporation MMBT3906SL Rev. 1.1.0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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