MMBT3906SL — PNP Epit axial Silicon Transistor
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3906SL Rev. 1.1.0 1
August 2012
MMBT3906SL
PNP Epitaxial Silicon Transistor
Features
• General purpose amplifier transistor
• Ultra small surface mount package for all types (max 0.43mm tall)
• Suitable for general switching & amplification
• Well suited for portable application
• As complementary type, NPN MMBT3904SL is recommended.
• Pb free
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics* Ta = 25C unless other wise noted
* Minimum land pad.
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collec tor-Emitter Voltage -40 V
VEBO Emitter -Base Voltage -5 V
ICCollector Current 200 mA
TJJunction Temperature 150 C
TSTG Storage Temperature Range -55 ~ 150 C
Symbol Parameter Max Unit
PCCollector Power Dissipation, by RJA 227 mW
RJA Thermal Resistance, Junction to Ambient 550 C/W
SOT-923F Marking : AB
C
BE
COLLECTOR
3
EMITTER
2
BASE
1
MMBT3906SL — PNP Epit axial Silicon Transistor
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3906SL Rev. 1.1.0 2
Electrical Characteristics* Ta = 25C unless otherwise noted
* DC Item are tested by Pulse Test: Pulse Width300us, Duty Cycle2%
Symbol Parameter Test Condi tion Min. Max. Unit
BVCBO Collector-Base Breakdo w n Voltage IC = -10A, IE = 0 -40 V
BVCEO Collector-Emitter Breakd own Voltage IC = -1mA, IB = 0 40 V
BVEBO Emitter-Base Breakdown Voltage IE = -10A, IC = 0 -5 V
ICEX Collector Cut-off Current VCE = -30V, VEB(OFF) = -0.3V -50 nA
hFE DC Current Gain VCE = 1V, IC = -0.1mA
VCE = 1V, IC = -1mA
VCE = 1V, IC = -10mA
VCE = 1V, IC = -50mA
VCE = 1V, IC = -100mA
60
80
100
60
30
300
VCE (sat) Collector-Emitter Saturation Voltage IC = -10mA , IB = -1mA
IC = -50mA, IB = -5mA -0.25
-0.4 V
V
VBE (sat) Base-Emitter Saturation Voltage IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA -0.65 -0.85
-0.95 V
V
fTCurrent Gain Bandwidth Product VCE = -20V, IC = -10mA,
f = 100MHz 250 MHz
Cob Output Capacitance VCB = -5V, IE = 0, f = 1MHz 7.0 pF
Cib Input Capacitance VEB = -0.5V, IC = 0, f = 1MHz 15 pF
tdDelay Time VCC = -3V, IC = -10mA
IB1 = - IB2 = -1mA 35 ns
trRise T i me 35 ns
tsStorage Time 225 ns
tfFall Time 75 ns
MMBT3906SL — PNP Epit axial Silicon Transistor
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3906SL Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base- Emitter Saturation Voltage Figure 4. Collector- Base Leakage Current
Figure 5. Collector- Base Capacitance Figure 6. Power Derating
1 10 100
10
100
Vce=1V
TJ=25 oC
TJ=75 oC
TJ=125 oC
TJ=-25 oC
Current Gain
Collector Current, [mA]
10 100
100
1000 Ic=10*Ib
TJ=25 oC
TJ=75 oC
TJ=125 oC
TJ=-25 oC
Collector-Emitter Voltage,[mV]
Collector Current, [mA]
10 100
100
1000
Ic=10*Ib
TJ=-25 oC
TJ=25 oC
TJ=75 oC
TJ=125 oC
Base- Emitter Voltage,[mV]
Collector Current, [mA]
10 20 30 40
1
10
100
TJ=-25 oC
TJ=25 oC
TJ=75 oC
TJ=125 oC
Base-Collector Leakage Current,[nA]
Base-Collector Revere Voltage, [V]
0510
6
8
9
11
12
f=1mhz
Base- Collector Juntion Capacitance, Cob[pF]
Base- Collector Reverse Voltage, Vcb[V]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
Power Dissipation, [mW]
Ambient Temperature, Ta[oC]
MMBT3906SL — PNP Epit axial Silicon Transistor
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3906SL Rev. 1.1.0 4
Package Dimensions
SOT-923F
• Case: SOT-923F
• Case Material (Molded Plastic): KTMC1060SC
• UL Flammability classification rating: “V0”
• Moisture Sensitivity level per JESD22-A1113B: MSL 1
• Lead terminals solderable per MIL-STD7502026 /JESD22A121
• Lead Free Plating: Pure Tin (Matte)
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Dimensions in Millimeters
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