Bulletin PD-20744 rev. A 01/01 150EBU04 Ultrafast Soft Recovery Diode Features * Ultrafast Recovery * 175C Operating Junction Temperature trr = 60ns IF(AV) = 150Amp VR = 400V Benefits * Reduced RFI and EMI * Higher Frequency Operation * Reduced Snubbing * Reduced Parts Count Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. Absolute Maximum Ratings Max Units VR Parameters Cathode to Anode Voltage 400 V IF(AV) Continuous Forward Current, TC = 104C 150 A IFSM Single Pulse Forward Current, TC = 25C 1500 IFRM ! Maximum Repetitive Forward Current TJ, TSTG Operating Junction and Storage Temperatures 300 - 55 to 175 C !"Square Wave, 20kHz Case Styles PowIRtab 1 150EBU04 Bulletin PD-20744 rev. A 01/01 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions VBR, Vr Breakdown Voltage, Blocking Voltage 400 - - V IR = 200A VF Forward Voltage - 1.07 1.3 V IF = 150A - 0.9 1.1 V IF = 150A, TJ = 175C - 0.96 1.17 V IF = 150A, TJ = 125C IR Reverse Leakage Current - - 50 A VR = VR Rated - - 4 mA TJ = 150C, VR = VR Rated CT Junction Capacitance - 100 - pF VR = 400V LS Series Inductance - 3.5 - nH Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ TJ = 25C (unless otherwise specified) Parameters t rr IRRM Qrr Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Min Typ Max Units Test Conditions - - 60 ns IF = 1.0A, diF/dt = 200A/s, VR = 30V IF = 150A - 93 - TJ = 25C - 172 - TJ = 125C - 11 - - 20 - - 490 - - 1740 - A VR = 200V diF /dt = 200A/s TJ = 25C TJ = 125C nC TJ = 25C TJ = 125C Thermal - Mechanical Characteristics Parameters RthJC Thermal Resistance, Junction to Case RthCS # Thermal Resistance, Case to Heatsink Wt Weight Min Typ Max Units 0.35 K/W 5.02 g 0.2 0.18 T Mounting Torque #"Mounting Surface, Flat, Smooth and Greased 2 (oz) 1.2 2.4 N*m 10 20 lbf.in 150EBU04 Bulletin PD-20744 rev. A 01/01 Reverse Current - I R (A) 1000 100 T = 175C J T J = 175C 100 125C 10 1 25C 0.1 0.01 0.001 0 T = 125C J 100 200 300 400 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage T = 25C J Junction Capacitance - C T (pF) 10000 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 T J = 25C 1000 100 10 10 1.8 Forward Voltage Drop - VFM (V) 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics 1 Thermal Impedance Z thJC (C/W) Instantaneous Forward Current - I F (A) 1000 D = 0.50 0.1 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 Single Pulse (Thermal Resistance) t2 Notes: 1. Duty factor D = t1/ t 2 2. Peak Tj = Pdm x ZthJC + Tc .01 0.00001 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics 3 150EBU04 Bulletin PD-20744 rev. A 01/01 300 Average Power Loss ( Watts ) Allowable Case Temperature (C) 80 60 40 DC 20 00 Square wave (D = 0.50) 80 Rated Vr applied 60 250 RMS Limit 200 150 D = 0.01 D = 0.02 D = 0.05 D = 0.10 DDC = 0.20 D = 0.50 DC 100 50 see note (3) 40 0 50 100 150 200 0 250 0 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current 250 50 100 150 200 250 Average Forward Current - IF(AV)(A) Fig. 6 - Forward Power Loss Characteristics 5000 Vr = 200V Tj = 125C Tj = 25C IF = 150A IF = 75A 4500 Vr = 200V Tj = 125C Tj = 25C 4000 200 Qrr ( nC ) trr ( ns ) 3500 150 IF = 150A IF = 75A 3000 2500 2000 1500 100 1000 500 50 100 di F /dt (A/s ) 1000 Fig. 7 - Typical Reverse Recovery time vs. di F /dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR 4 0 100 di F /dt (A/s ) 1000 Fig. 8 - Typical Stored Charge vs. di F /dt 150EBU04 Bulletin PD-20744 rev. A 01/01 Reverse Recovery Circuit VR = 200V 0.01 L = 70H D.U.T. di F /dt dif/dt ADJUST D IRFP250 G S Fig. 9- Reverse Recovery Parameter Test Circuit 3 trr IF tb ta 0 2 Q rr I RRM 4 0.5 I RRM di(rec)M/dt 5 0.75 I RRM 1 /dt di fF/dt 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 10 - Reverse Recovery Waveform and Definitions 5 150EBU04 Bulletin PD-20744 rev. A 01/01 Outline Table Dimensions in millimeters and (inches) Ordering Information Table Device Code 150 E B U 04 1 2 3 4 5 1 - Current Rating 2 - Single Diode 3 - PowIRtab 4 - Ultrafast Recovery 5 - Voltage Rating (150 = 150A) (Ultrafast/ Hyperfast only) (04 = 400V) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/01 6