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Case Styles
PowIRtab
150EBU04
Bulletin PD-20744 rev. A 01/01
trr = 60ns
IF(AV) = 150Amp
VR = 400V
Features
Description/ Applications
Absolute Maximum Ratings
Ultrafast Soft Recovery Diode
VRCathode to Anode Voltage 400 V
IF(AV) Continuous Forward Current, TC = 104°C 150 A
IFSM Single Pulse Forward Current, TC = 25°C 1500
IFRM !Maximum Repetitive Forward Current 300
TJ, TSTG Operating Junction and Storage Temperatures - 55 to 175 °C
Parameters Max Units
• Ultrafast Recovery
• 175°C Operating Junction Temperature
Benefits
• Reduced RFI and EMI
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited
for HF welding, power converters and other applications where switching losses are not significant portion of the total
losses.
!"Square Wave, 20kHz
150EBU04
Bulletin PD-20744 rev. A 01/01
2
VBR, VrBreakdown Voltage, 400 - - V IR = 200µA
Blocking Voltage
VFForward Voltage - 1.07 1.3 V IF = 150A
- 0.9 1.1 V IF = 150A, TJ = 175°C
- 0.96 1.17 V IF = 150A, TJ = 125°C
IRReverse Leakage Current - - 50 µA VR = VR Rated
--4mAT
J = 150°C, VR = VR Rated
C TJunction Capacitance - 100 - pF VR = 400V
L SSeries Inductance - 3.5 - nH Measured lead to lead 5mm from package body
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
trr Reverse Recovery Time --60 ns IF = 1.0A, diF/dt = 200A/µs, VR = 30V
-93- T
J = 25°C
- 172 - TJ = 125°C
IRRM Peak Recovery Current - 11 - A TJ = 25°C
-20- T
J = 125°C
Qrr Reverse Recovery Charge - 490 - nC TJ = 25°C
- 1740 - TJ = 125°C
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
IF = 150A
VR = 200V
diF /dt = 200A/µs
Parameters Min Typ Max Units Test Conditions
Parameters Min Typ Max Units
RthJC Thermal Resistance, Junction to Case 0.35 K/W
RthCS #Thermal Resistance, Case to Heatsink 0.2
Wt Weight 5.02 g
0.18 (oz)
T Mounting Torque 1.2 2.4 N * m
10 20 lbf.in
Thermal - Mechanical Characteristics
#"Mounting Surface, Flat, Smooth and Greased
Bulletin PD-20744 rev. A 01/01
3
150EBU04
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Forward Voltage Drop - VFM (V)
Instantaneous Forward Current - I F
(A)
Reverse Voltage - VR (V)
Reverse Voltage - VR (V)
Junction Capacitance - C T (pF)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
t1, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z thJC (°C/W)
Reverse Current - I R
(µA)
10
100
1000
10000
10 100 1000
T = 25˚C
J
.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
Notes:
1. Duty factor D = t1/ t 2
2. Peak Tj = Pdm x ZthJC + Tc
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400
25˚C
T = 175˚C
J
125˚C
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
T = 175˚C
T = 125˚C
T = 25˚C
J
J
J
150EBU04
Bulletin PD-20744 rev. A 01/01
4
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1
= rated VR
Average Power Loss ( Watts )
trr ( ns )
Qrr ( nC )
Average Forward Current - IF(AV)
(A)
Allowable Case Temperature (°C)
Average Forward Current - IF(AV)
(A)
di
F
/dt (A/µs )
di F
/dt (A/µs )
Fig. 8 - Typical Stored Charge vs. di F /dt
Fig. 7 - Typical Reverse Recovery time vs. di F /dt
40
60
80
00
20
40
60
80
0 50 100 150 200 250
DC
Square wave (D = 0.50)
Rated Vr applied
see note (3)
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
100 1000
IF = 150A
IF = 75A
Vr = 200V
Tj = 125˚C
Tj = 25˚C
0
50
100
150
200
250
300
0 50 100 150 200 250
DC
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
50
100
150
200
250
100 1000
IF = 150A
IF = 75A
Vr = 200V
Tj = 125˚C
Tj = 25˚C
Bulletin PD-20744 rev. A 01/01
5
150EBU04
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70µH
V = 200V
R
0.01
Ω
G
D
S
dif/dt
ADJUST
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1di /dt
f
Fig. 9- Reverse Recovery Parameter Test Circuit
Reverse Recovery Circuit
di F /dt
di F /dt
4. Qrr - Area under curve defined by t rr
and IRRM
5. di (rec) M / dt - Peak rate of change of
current during t b portion of t rr
1. diF/dt - Rate of change of current through zero
crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured from zero
crossing point of negative going IF to point where
a line passing through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
Q rr = t rr x I RRM
2
150EBU04
Bulletin PD-20744 rev. A 01/01
6
Dimensions in millimeters and (inches)
Outline Table
Ordering Information Table
Device Code
152 4
3
1- Current Rating (150 = 150A)
2- Single Diode
3- PowIRtab (Ultrafast/ Hyperfast only)
4- Ultrafast Recovery
5- Voltage Rating (04 = 400V)
150 E B U 04
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TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 01/01
