Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G150SH12AE
Apr. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
Description
DA WIN ’ S I G B T 7DM-2 Package dev ices are opt imized t o reduce losses
and swit ching noise in high f requency power conditioning electr ica l sy st ems.
These I G BT modules are ideally suited for power inverters, motors drives
and ot her applications w here swit ching losses are s ignif icant portion of the
t ot a l losses.
Features
☞High Speed Switching
☞BVCES = 1200V
☞Low Conduct ion Loss : VCE(sat) = 1.8 V (ty p.)
☞Fast & Soft Ant i-Paral lel FWD
☞Short circu it rated : Min. 10uS at TC=100℃
☞Reduced EM I and R FI
☞I solation Ty pe Package
Applications
Mot or Drives, High Power Inverters, Welding Machine, I nduction He ating,
UP S , CVC F, R obot ics , Servo Cont rols, High Speed SMP S
Absolu te M axi mu m Ratin g s@ Tj=25℃(Per Leg)
Symbol Parameter Ratings UnitConditions
Equiv alent Circu it
E qu ival en t Ci r cuit and Packag e
Package : 7DM-2 Series
Please see the package out line inf ormat ion
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
Tj
Tstg
Viso
TL
C o llec tor-E mitt e r V o lta g e
Gat e-Emitter Voltage
Collect or Current
Pulsed Collector Current
Diode Cont inuous Forward Current
Diode Maximum Forward Current
Short C ircuit Wit hst and T ime
Maximum Power Dissipation
Operat ing Junction Temperature
St orage Temperature Range
I solation Volt age
Maximum Lead Temp. for soldering
Purposes, 1/8”f rom case f or 9 seconds
Mount ing screw Torque :M6
Power terminals screw Torque :M5
1200
±20
200
150
300
150
300
10
1100
-40 ~ 150
-40 ~ 125
2500
260
4.0
2.0
V
V
A
A
A
A
A
uS
W
℃
℃
V
℃
N.m
N.m
-
-
Tc = 25℃
Tc = 80℃
-
Tc = 100℃
-
Tc = 100℃
Tc = 25℃
-
-
AC 1 minute
-
-
H igh Pow er SPT+& Lugged Type IGBT Module
6
7
5
4
①②③
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G150SH12AE
Apr. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
E l ectr ical Char acteristi cs o f IGBT @ TC=25℃(unless otherwise specified)
Symbol Parameter Values Unit
Conditions Min. Typ. Max.
C - E B reakdown V oltage
Temperat ure Coeff. of
Breakdown Voltage
G - E t hreshold volt age
Colle ctor cutoff Current
G - E leakage Current
Colle ctor to Emitter
sat uration v oltage
I nput capacitance
Output capacitance
Reverse transf er capacit ance
Turn on delay time
Tu rn o n ris e time
Turn off delay tim e
Turn off fall time
Turn on Swit ching Loss
Turn off Switching Loss
Tot al Switching Loss
Short C ircuit Wit hst and T ime
Tot al Gat e Charge
Gat e-Emitter Charge
Gate-Collect or Charge
1200
-
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
0.6
-
-
-
1.8
2.0
11
0.8
0.5
175
70
460
70
10
7.5
17.5
-
1250
180
600
-
-
8
1.5
±250
2.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V/℃
V
mA
nA
V
V
nF
nF
nF
nS
nS
nS
nS
mJ
mJ
mJ
uS
nC
nC
nC
VGE = 0V , IC= 1.0m A
VGE = 0V , IC= 1.0m A
IC=3.0mA , V CE = V GE
VCE = 1200V , VGE = 0V
VGE =±20V
IC=150A, VGE=15V @TC= 25 ℃
IC=150A, VGE=15V @TC=100℃
VGE = 0 V , f = 1㎒
VCE = 25V
VCC = 600V , IC=150A
VGE = ±15V
RG= 6Ω
I nduct iv e Load= 60nH
VCC = 600V, VGE = ±15V
RG=6Ω@TC= 100℃
VCC = 600V
VGE =±15V
IC= 150A
BVCES
ΔBVCES/
ΔTJ
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off )
tf
Eon
Eoff
Ets
Tsc
Qg
Qge
Qgc
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G150SH12AE
Apr. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
E l ectr ical Char acteristi cs o f F RD @ TC=25℃(unless ot herwise specif ied )
Symbol Parameter Values UnitConditions Min. Typ. Max.
IF=150A
IF= 150A, VR=600V
di/ dt= -200A/ uS
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Diode Forw ard Voltage
Diode Reverse
Recov ery Time
Diode Peak Reverse
Rec over y Cur r e nt
Diode Reverse
Recovery Charge
VFM
trr
Irr
Qrr
-
-
-
-
-
-
-
-
2.2
2.0
175
200
50
65
2600
10500
3.0
-
-
-
-
-
-
-
V
nS
A
nC
Th ermal Character i stics and Wei g h t
Symbol Parameter Values UnitConditions Min. Typ. Max.
Junct ion-t o-Case(IG BT Part , Pe r 1/2 M odule)
Junct ion-t o-Case(DI O DE Part , Per 1/2 Module)
Case-t o-Sink ( Conduct iv e grease applied)
Weight of Module
℃/W
℃/W
℃/W
g
-
-
-
-
0.11
0.25
-
250
-
-
0.04
-
RθJC
RθJC
RθCS
Weight
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G150SH12AE
Apr. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
0
5
10
15
20
0 5 10 15 20
0
5
10
15
20
0 5 10 15 20
0
50
100
150
200
0.1 1 10 100
P erfor m an ce Cur ves
Du ty cycle = 5 0%
TC=125℃
Power Dissipation = 165W
C ommon E mitte r
TC=25℃
200A
150A
IC=100A
C ommon E mitte r
TC=125℃
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Gate – Emitter Voltage, VGE [V]
Collect or – Emitt er Voltage, VCE [V]
Collect or – Emitt er Voltage, VCE [V]
Gate – Emitter Voltage, VGE [V]
Frequen cy [KHz]
Load Cu r r ent [A]
Fig 1. Typical Output characteristics
Fig 3. Typical Saturation Voltage
characteristics Fig 4. Load Current vs. Frequency
Fig 5. Typical Saturation Voltage vs. VGE
Fig 2. Typical Output characteristics
Fig 6. Typical Saturation Voltage vs. VGE
200A
IC=100A
150A
0
50
100
150
200
250
300
00.511.522.533.54
C ommon E mitte r
TC=25℃
VGE = 8V
10V
12V
15V
20V
0
50
100
150
200
250
300
0 123 4
20V 15V
C ommon E mitte r
TC=125℃
10V
12V
VGE=8V
0
100
200
300
0123
TC=125℃
TC=25℃
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G150SH12AE
Apr. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
0
50
100
150
200
250
300
350
400
012345
0.001
0.01
0. 1
1
1.E-05 2.E-01 4.E-01 6.E-01 8.E-01 1.E+00
0
200
400
600
800
10 00
12 00
14 00
0 20 40 60 80 100 120 140 160
0
50
100
150
200
250
0 20406080100120140160
0
5
10
15
20
00.10.20.30.40.50.6 0.70.80.9 1
0.1
1
10
100
0 20 4060 80100
Collect or – Emitt er Voltage, VCE [V]
Capaci tance [pF]
C ommon E mitte r
VGE=0V, f =1MHZ
TC=25℃
Cies
Coes
Cres
Ga te C ha rg e, Qg [nC ]
Gate – Emitter Voltage, VGE [V]
C ommon E mitte r
VCE=600V, IC=150A
TC=25℃
Rectangular Pulse Du ration Time [sec]
Therma l Response Zt hjc [ /W ]
℃
Forwar d Drop Voltage, VF[V]
F orwa rd C urrent, IF[A]
Fig 7. Capacitance characteristics Fig 8. Gate Charge characteristics
Fig 11. Transient Thermal Impedance Fig 12. Forward characteristics
VCC=600V VCC=800V
Fig 9. rated Current vs. Case Temperature Fig 10. Power Dissipation vs. Case Temperature
Tc [ ℃]
Ic [ A ]
TJ= 150℃
VGE ≥15V
Tc [ ℃]
PD[ W ]
TJ≤150℃
PD= f(Tc)
IGBT :
DIODE :
TC=25℃
TC=125℃
TC=25℃
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G150SH12AE
Apr. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
P ackage Ou t L ine In for mati o n
7DM-2
Dimensions in mm
91.5±0.5
22±0.5
1±0.05
10±0.2 10±0.2 10±0.2
7±0.2 16±0.2 7±0.2 48±0.5
19±0.5
6.8±0.5
45.5±0.5
1
23
4±0.34±0.3 18±0.5
11±0. 5
23±0.5 23±0.5
94±0.3
13±0.3
48±0.5
2.8±0.05
MAX 31
80±0.3
M5 DP 7
6.4 ± 0.2
LABEL PLATE
76 5 4
10.8±0. 0 5
Bolt Depth
