TPS43337-Q1
VBuckA
VBuckB
VBAT
2 V
V BAT
CV BUC K A
VBUCKB
TPS43337-Q1
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SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
LOW I
Q
, SINGLE-BOOST, FIXED-VOLTAGE DUAL SYNCHRONOUS BUCK CONTROLLER
Check for Samples: TPS43337-Q1
1FEATURES Peak Gate Drive Current 1.5 A
Thermally Enhanced 38-Pin HTSSOP (DAP)
2 Qualified for Automotive Applications PowerPAD™ Package
AEC-Q100 Qualified With the Following
Results: APPLICATIONS
Device Temperature Grade 1: –40°C to Automotive Start-Stop, Infotainment,
+125°C Ambient Operating Temperature Navigation Instrument Cluster Systems
Device HBM ESD Classification Level H2 Industrial and Automotive Multi-Rail DC
Device CDM ESD Classification Level C2 Power-Distribution Systems and Electronic
Two Synchronous Buck Controllers Control Units
BuckA: Fixed Output Voltage of 3.4 V
BuckB: Fixed Output Voltage of 1.235 V DESCRIPTION
The TPS43337-Q1 includes two current-mode
One Pre-Boost Controller synchronous buck controllers and a voltage-mode
Input Range up to 40 V, (Transients up to 60 boost controller. The device is ideally suited as a pre-
V), Operation Down to 2 V When Boost Is regulator stage with low IQrequirements and for
Enabled systems that must survive supply drops due to
Low-Power Mode IQ: 34 µA (One Buck On), 43 cranking events. The integrated boost controller
µA (Two Bucks On) allows the device to operate down to 2 V at the input
without seeing a drop on the buck regulator output
Low Shutdown Current Ish < 4 µA stages. At light loads, the buck controllers enable to
Boost Output Selectable: 7 V, 8.85 V, or 10 V operate automatically in low power-mode, consuming
Programmable Frequency and External just 34 µA of quiescent current.
Synchronization Range: 150 to 600 kHz The buck controllers have independent soft-start
Separate Enable Inputs (ENA, ENB, ENC) capability and power-good indicators. Current
foldback in the buck controllers and cycle-by-cycle
Selectable Forced Continuous Mode or current limitation in the boost controller provide
Automatic Low-Power Mode at Light Loads external MOSFET protection. The switching
Sense Resistor or Inductor DCR Sensing for frequency is programable over 150 to 600 kHz or is
Buck Controllers synchronized to an external clock in the same range
Out-of-Phase Switching Between Buck
Channels
Figure 1. Typical Application Diagram
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Copyright © 2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TPS43337-Q1
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
space
ABSOLUTE MAXIMUM RATINGS(1)
MIN MAX UNIT
Voltage Input voltage: VIN, VBAT –0.3 60 V
Enable inputs: ENA, ENB –0.3 60 V
Bootstrap inputs: CBA, CBB –0.3 68 V
Phase inputs: PHA, PHB –0.7 60 V
Phase inputs: PHA, PHB (for 150 ns) –1 V
Feedback inputs: FBA, FBB –0.3 13 V
Error amplifier outputs: COMPA, COMPB –0.3 13 V
Voltage High-side MOSFET driver: GA1–PHA, GB1–PHB –0.3 8.8 V
(buck function: Low-side MOSFET drivers: GA2, GB2 –0.3 8.8 V
BuckA and BuckB) Current-sense voltage: SA1, SA2, SB1, SB2 –0.3 13 V
Soft start: SSA, SSB –0.3 13 V
Power-good output: PGA, PGB –0.3 13 V
Power-good delay: DLYAB –0.3 13 V
Switching-frequency timing resistor: RT –0.3 13 V
SYNC, EXTSUP –0.3 13 V
Low-side MOSFET driver: GC1 –0.3 8.8 V
Error amplifier output: COMPC –0.3 13 V
Voltage Enable input: ENC –0.3 13 V
(boost function) Current-limit sense: DS –0.3 60 V
Output-voltage select: DIV –0.3 8.8 V
P-channel MOSFET driver: GC2 –0.3 60 V
Voltage
(PMOS driver) P-channel MOSFET driver: VIN–GC2 –0.3 8.8 V
Gate-driver supply: VREG –0.3 8.8 V
Junction temperature: TJ–40 150 °C
Temperature Operating temperature: TA–40 125 °C
Storage temperature: TS–55 165 °C
Human-body model (HBM) AEC-Q100 ±2 kV
Classification Level H2
VBAT, ENC, SYNC, VIN ±750
Charged-device model (CDM) AEC-Q100
Electrostatic Classification Level C2
discharge ratings All other pins ±500 V
PGA, PGB ±150
Machine model (MM) All other pins ±200
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to GND.
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THERMAL INFORMATION TPS43337-Q1
THERMAL METRIC(1) HTSSOP-DAP UNIT
38 PINS
θJA Junction-to-ambient thermal resistance(2) 27.3 °C/W
θJCtop Junction-to-case (top) thermal resistance(3) 19.6 °C/W
θJB Junction-to-board thermal resistance(4) 15.9 °C/W
ψJT Junction-to-top characterization parameter(5) 0.24 °C/W
ψJB Junction-to-board characterization parameter(6) 6.6 °C/W
θJCbot Junction-to-case (bottom) thermal resistance(7) 1.2 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
Spacer
RECOMMENDED OPERATING CONDITIONS MIN MAX UNIT
Input voltage: VIN, VBAT 4 40
Enable inputs: ENA, ENB 0 40
Boot inputs: CBA, CBB 4 48
Buck function:
BuckA and BuckB Phase inputs: PHA, PHB –0.6 40 V
voltage Current-sense voltage: SA1, SA2, SB1, SB2 0 11
Power-good output: PGA, PGB 0 11
SYNC, EXTSUP 0 9
Enable input: ENC 0 9
Boost function Voltage sense: DS 40 V
DIV 0 VREG
Operating Temperature: TA–40 125 °C
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DC ELECTRICAL CHARACTERISTICS
VIN = 8 to 18 V, TJ= –40°C to +150°C (unless otherwise noted)
NO. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
1.0 Input Supply
Boost controller enabled, after initial start-up
1.1 VBAT Supply voltage 2 40 V
condition is satisfied
Input voltage required for device 6.5 40
on initial start-up
1.2 VIN V
Buck regulator operating range 4 40
after initial start-up
VIN falling. After a reset, initial start-up conditions 3.5 3.6 3.8 V
may apply.(1)
1.3 VIN UV Buck undervoltage lockout VIN rising. After a reset, initial start-up conditions 3.8 4 V
may apply.(1)
1.4 VBOOST_UNLOCK Boost unlock threshold VBAT rising 8.2 8.5 8.8 V
VIN = 13 V, BuckA: LPM, BuckB: off, TA= 25°C 34 46 µA
LPM quiescent current:
1.5 IQ_LPM VIN = 13 V, BuckB: LPM, BuckA: off, TA= 25°C
(2)
VIN = 13 V, BuckA, B: LPM, TA= 25°C 43 57 µA
VIN = 13 V, BuckA: LPM, BuckB: off, TA= 125°C 44 56 µA
LPM quiescent current:
1.6 IQ_LPM VIN = 13 V, BuckB: LPM, BuckA: off, TA= 125°C
(2)
VIN = 13 V, BuckA and BuckB: LPM, TA= 125°C 53 67 µA
SYNC = 5 V, TA= 25°C
VIN = 13 V, BuckA: CCM, BuckB: off, TA= 25°C 4.85 5.3
Quiescent current:
1.7 IQ_NRM mA
normal (PWM) mode(2) VIN = 13 V, BuckB: CCM, BuckA: off, TA= 25°C
VIN = 13 V, BuckA and BuckB: CCM, TA= 25°C 7 7.6
SYNC = 5 V, TA= 125°C
VIN = 13 V, BuckA: CCM, BuckB: off, TA= 125°C 5 5.5
Quiescent current:
1.8 IQ_NRM mA
normal (PWM) mode(2) VIN = 13 V, BuckB: CCM, BuckA: off, TA= 125°C
VIN = 13 V, BuckA, B: CCM, TA= 125°C 7.5 8
1.9 Ibat_sh Shutdown current BuckA and BuckB: off, VBat = 13 V , TA= 25°C 2.5 4 µA
1.10 Ibat_sh Shutdown current BuckA and BuckB: off, VBat = 13 V, TA= 125°C 3 5 µA
1.11 VINLPMexit VIN level to exit LPM VIN falling 7.7 8 8.3 V
1.12 VINLPMentry VIN level to enable entering LPM VIN rising 8.2 8.5 8.8 V
1.13 VINLPMhys Hysteresis VIN rising or falling 0.4 0.5 0.6 V
2.0 Input Voltage VBAT - Undervoltage Lockout
VBAT falling. After a reset, initial start-up conditions 1.8 1.9 2 V
may apply.(1)
2.1 VBATUV Boost-input undervoltage VBAT rising. After a reset, initial start-up conditions 2.4 2.5 2.6 V
may apply.(1)
2.2 UVLOHys Hysteresis 500 600 700 mV
2.3 UVLOfilter Filter time 5 µs
3.0 Input Voltage VIN - Overvoltage Lockout
VIN rising 45 46 47
3.1 VOVLO Overvoltage shutdown V
VIN falling 43 44 45
3.2 OVLOHys Hysteresis 1 2 3 V
3.3 OVLOfilter Filter time 5 µs
(1) If VBAT and VREG remain adequate, the buck can continue to operate if VIN is > 3.8 V.
(2) Quiescent current specification includes the current in the internal-feedback resistor divider.
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DC ELECTRICAL CHARACTERISTICS (continued)
VIN = 8 to 18 V, TJ= –40°C to +150°C (unless otherwise noted)
NO. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
4.0 Boost Controller
4.1 Vboost7-VIN Boost VOUT = 7 V DIV = low, VBAT = 2 to 7 V 6.8 7 7.3 V
Boost-enable threshold Boost VOUT = 7 V, VBAT falling 7.5 8 8.5
4.2 Vboost7-th Boost-disable threshold Boost VOUT = 7 V, VBAT rising 8 8.5 9 V
Boost hysteresis Boost VOUT = 7 V, VBAT rising or falling 0.4 0.5 0.6
4.3 Vboost10-VIN Boost VOUT = 10 V DIV = open, VBAT = 2 to 10 V 9.7 10 10.4 V
Boost-enable threshold Boost VOUT = 10 V, VBAT falling 10.5 11 11.5
4.4 Vboost10-th Boost-disable threshold Boost VOUT = 10 V, VBAT rising 11 11.5 12 V
Boost hysteresis Boost VOUT = 10 V, VBAT rising or falling 0.4 0.5 0.6
4.5 Vboost8.85-VIN Boost VOUT = 8.85 V DIV = VREG, VBAT = 2 to 8.85 V 8.35 8.85 9.35 V
Boost-enable threshold Boost VOUT = 8.85 V, VBAT falling 9.15 9.85 10.45
4.6 Vboost8.85-th Boost-disable threshold Boost VOUT = 8.85 V, VBAT rising 9.65 10.35 10.85 V
Boost hysteresis Boost VOUT = 8.85 V, VBAT rising or falling 0.4 0.5 0.6
Boost-Switch Current Limit
4.7 VDS Current-limit sensing DS input with respect to PGNDA 0.175 0.2 0.225 V
4.8 tDS Leading-edge blanking 200 ns
Gate Driver for Boost Controller
4.9 IGC1 Peak Gate-driver peak current 1.5 A
4.10 rDS(on) Source and sink driver VREG = 5.8 V, IGC1 current = 200 mA 2 Ω
Gate Driver for PMOS
4.11 rDS(on) PMOS OFF 10 20 Ω
4.12 IPMOS_ON Gate current VIN = 13.5 V, Vgs = –5 V 10 mA
4.13 tdelay_ON Turnon delay C = 10 nF 5 10 µs
Boost-Controller Switching Frequency
4.14 fsw-Boost Boost switching frequency fSW_Buck / 2 kHz
4.15 DBoost Boost duty cycle 90%
Error Amplifier (OTA) for Boost Converters
VBAT = 12 V 0.8 1.35
4.16 GmBOOST Forward transconductance mS
VBAT = 5 V 0.35 0.65
5.0 Buck Controllers
Fixed output voltage in normal
5.1a VBuckA_NRM 3.345 3.396 3.447
Included resistor-feedback-divider, measured at
mode V
FBA pin
5.1b VBuckA_LPM Fixed output in low-power mode 3.311 3.396 3.481
Fixed output voltage in normal
5.2a VBuckB_NRM 1.216 1.235 1.253
mode Included resistor-feedback-divider, measured at V
FBB pin
Fixed output voltage in low-
5.2b VBuckB_LPM 1.204 1.235 1.266
power mode
V sense for forward-current limit Measured across Sx1 and Sx2, FBx at 94% of
5.4 60 75 90 mV
in CCM typical value (low duty-cycle)
Vsense V sense for reverse-current limit Measured across Sx1 and Sx2, FBx at 125% of
5.5 –65 –37.5 –23 mV
in CCM typical value
5.6 VI-Foldback V sense for output short Measured across Sx1 and Sx2, FBx = 0 V 17 32.5 48 mV
Shoot-through delay, blanking
5.7 tdead 20 ns
time
High-side minimum on-time 100 ns
5.8 DCNRM Maximum duty cycle (digitally 98.75%
controlled)
5.9 DCLPM Duty cycle, LPM 80%
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DC ELECTRICAL CHARACTERISTICS (continued)
VIN = 8 to 18 V, TJ= –40°C to +150°C (unless otherwise noted)
NO. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LPM entry-threshold load current
ILPM_Entry as fraction of maximum set load 1% .(3)
current
5.10 LPM exit-threshold load current
ILPM_Exit as fraction of maximum set load (3) 10%
current
High-Side External NMOS Gate Drivers for Buck Controller
5.11 IGX1_peak Gate-driver peak current 1.5 A
5.12 rDS(on) Source and sink driver VREG = 5.8 V, IGX1 current = 200 mA 2 Ω
Low-Side NMOS Gate Drivers for Buck Controller
5.13 IGX2_peak Gate driver peak current 1.5 A
5.14 RDS ON Source and sink driver VREG = 5.8 V, IGX2 current = 200 mA 2 Ω
Error Amplifier (OTA) for Buck Converters
COMPA, COMPB = 0.8 V,
5.15 GmBUCK Transconductance 0.72 1 1.35 mS
source/sink = 5 µA, test in feedback loop
6.0 Digital Inputs: ENA, ENB, ENC, SYNC
6.1 VIH Higher threshold VIN = 13 V 1.7 V
6.2 VIL Lower threshold VIN = 13 V 0.7 V
6.3 RIH_SYNC Pulldown resistance on SYNC VSYNC = 5 V 500 kΩ
6.4 RIL_ENC Pulldown resistance on ENC VENC = 5 V 500 kΩ
Pullup current source on ENA,
6.5 IIL_ENx VENx = 0 V 0.5 2 µA
ENB
7.0 Boost Output Voltage: DIV
7.1 VIH_DIV Higher threshold VREG = 5.8 V Vreg 0.2 V
7.2 VIL_DIV Lower threshold 0.2 V
7.3 Voz_DIV Voltage on DIV if unconnected Voltage on DIV if unconnected Vreg / 2 V
8.0 Switching Parameter Buck DC-DC Controllers
8.1 fSW_Buck Buck switching frequency RT pin: GND 360 400 440 kHz
8.2 fSW_Buck Buck switching frequency RT pin: 60-kΩexternal resistor 360 400 440 kHz
Buck adjustable range with
8.3 fSW_adj RT pin: external resistor 150 600 kHz
external resistor
8.4 fSYNC Buck synchronization range External clock input 150 600 kHz
9.0 Internal Gate-Driver Supply
Internal regulated supply VIN = 8 to 18 V, VEXTSUP = 0 V, SYNC = high 5.5 5.8 6.1 V
9.1 VREG IVREG = 0 to 100 mA, VEXTSUP = 0 V,
Load regulation 0.2% 1%
SYNC = high
Internal regulated supply VEXTSUP = 8.5 V 7.2 7.5 7.8 V
9.2 VREG(EXTSUP) IEXTSUP = 0 to 125 mA, SYNC = High
Load regulation 0.2% 1%
VEXTSUP = 8.5 to 13 V
EXTSUP switch-over voltage IVREG = 0 to 100 mA,
9.3 VEXTSUP-th 4.4 4.6 4.8 V
threshold VEXTSUP ramping positive
9.4 VEXTSUP-Hys EXTSUP switch-over hysteresis 150 250 mV
9.5 IREG-Limit Current limit on VREG VEXTSUP = 0 V, normal mode as well as LPM 100 400 mA
Current limit on VREG when IVREG = 0 to 100 mA,
9.6 IREG_EXTSUP-Limit 125 400 mA
using EXTSUP VEXTSUP = 8.5 V, SYNC = High
10.0 Soft Start
10.1 ISSx Soft-start source current VSSA and VSSB = 0 V 40 50 60 µA
11.0 Oscillator (RT)
11.1 VRT Oscillator reference voltage 1.2 V
(3) The exit threshold specification must always higher than the entry threshold.
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DC ELECTRICAL CHARACTERISTICS (continued)
VIN = 8 to 18 V, TJ= –40°C to +150°C (unless otherwise noted)
NO. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
12.0 Power Good / Delay
12.1a PGthA FBA falling 3.09 3.158 3.226
Power-good threshold V
12.1b PGthB FBB falling 1.124 1.148 1.173
12.2 PGhys Hysteresis 2%
12.3 PGdrop Voltage drop IPGA = 5 mA 450 mV
12.4 IPGA = 1 mA 100 mV
12.5 PGleak Power-good leakage Sx2 = PGx = 13 V 1 µA
12.6 tdeglitch Power-good deglitch time 2 16 µs
External capacitor = 1 nF
12.7 tdelay Reset delay 1 ms
VBUCKx < PGthx
12.8 tdelay_fix Fixed reset delay No external capacitor, pin open 20 50 µs
Activate current source (current
12.9 IOH 30 40 50 µA
to charge external capacitor)
Activate current sink (current to
12.10 IIL 30 40 50 µA
discharge external capacitor)
13.0 Overtemperature Protection
Junction-temperature shutdown
13.1 Tshutdown 150 165 °C
threshold
13.2 Thys Junction-temperature hysteresis 15 °C
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1
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4
5
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21
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VBAT
DS
GC1
GC2
CBA
GA1
PHA
GA2
PGNDA
SA1
SA2
FBA
COMPA
SSA
PGA
ENA
ENB
COMPC
ENC SYNC
DLYAB
RT
AGND
PGB
SSB
COMPB
FBB
SB2
SB1
PGNDB
GB2
PHB
GB1
CBB
VREG
DIV
EXTSUP
VIN
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DEVICE INFORMATION
DAP PACKAGE
(TOP VIEW)
PIN FUNCTIONS
NAME NO. I/O DESCRIPTION
AGND 23 O Analog ground reference
A capacitor on this pin acts as the voltage supply for the high-side N-channel MOSFET gate-drive circuitry in buck
CBA 5 I controller BuckA. When the buck is in a dropout condition, the device automatically reduces the duty cycle of the
high-side MOSFET to approximately 95% on every fourth cycle to allow the capacitor to recharge.
A capacitor on this pin acts as the voltage supply for the high-side N-channel MOSFET gate-drive circuitry in buck
CBB 34 I controller BuckB. When the buck is in a dropout condition, the device automatically reduces the duty cycle of the
high-side MOSFET to approximately 95% on every fourth cycle to allow the capacitor to recharge.
Error-amplifier output of BuckA and compensation node for voltage-loop stability. The voltage at this node sets the
COMPA 13 O target for the peak current through the inductor of BuckA. Clamping this voltage on the upper and lower ends
provides current-limit protection for the external MOSFETs.
Error-amplifier output of BuckB and compensation node for voltage-loop stability. The voltage at this node sets the
COMPB 26 O target for the peak current through the inductor of BuckB. Clamping this voltage on the upper and lower ends
provides current-limit protection for the external MOSFETs.
COMPC 18 O Error-amplifier output and loop-compensation node of the boost regulator
The status of this pin defines the output voltage of the boost regulator. A high input regulates the boost converter
DIV 36 I at 8.85 V, a low input sets the value at 7 V, and a floating pin sets 10 V.
The capacitor at the DLYAB pin sets the power-good delay interval used to de-glitch the outputs of the power-
DLYAB 21 O good comparators. Leaving this pin open sets the power-good delay to an internal default value of 20 μs, typical.
This input monitors the voltage on the external boost-converter low-side MOSFET for overcurrent protection. An
DS 2 I alternative connection for better noise immunity is to place a sense resistor between the source of the low-side
MOSFET and ground via a filter network.
Enable inputs for BuckA (active-high with an internal pullup current source). An input voltage higher than 1.5 V
ENA 16 I enables the controller, whereas an input voltage lower than 0.7 V disables the controller. When both ENA and
ENB are low, the device shuts down and consumes less than 4 µA of current.
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PIN FUNCTIONS (continued)
NAME NO. I/O DESCRIPTION
Enable inputs for BuckB (active-high with an internal pullup current source). An input voltage higher than 1.5 V
ENB 17 I enables the controller, whereas an input voltage lower than 0.7 V disables the controller. When both ENA and
ENB are low, the device shuts down and consumes less than 4 µA of current.
This input enables and disables the boost regulator. An input voltage higher than 1.5 V enables the controller.
ENC 19 I Voltages lower than 0.7 V disable the controller. When enabled, the controller starts switching as soon as VBAT
falls below the boost threshold, depending upon the programmed output voltage.
One uses EXTSUP to supply the VREG regulator from one of the TPS43337-Q1 buck regulator rails to reduce
EXTSUP 37 I power dissipation in cases where there is an expectation of high VIN. When EXTSUP is open or lower than 4.6 V,
the regulator power comes from VIN.
Feedback voltage pin for BuckA. The buck controller regulates this feedback voltage to 3.4 V through the internal
FBA 12 I resistor-divider network. Connect FBA to the output voltage of BuckA.
Feedback voltage pin for BuckB. The buck controller regulates this feedback voltage to 1.235 V through the
FBB 27 I internal resistor-divider network. Connect FBB to the output voltage of BuckB.
This output drives an external high-side N-channel MOSFET for buck regulator BuckA. The output provides high
GA1 6 O peak currents to drive capacitive loads. The gate-drive reference is to a floating ground provided by PHA that has
a voltage swing provided by CBA.
This output drives an external high-side N-channel MOSFET for buck regulator BuckA. The output provides high
GA2 8 O peak currents to drive capacitive loads. VREG provides the voltage swing on this pin.
This output drives an external high-side N-channel MOSFET for buck regulator BuckB. The output provides high
GB1 33 O peak currents to drive capacitive loads. The gate-drive reference is to a floating ground provided by PHB that has
a voltage swing provided by CBB.
This output drives an external high-side N-channel MOSFET for buck regulator BuckB. The output provides high
GB2 31 O peak currents to drive capacitive loads. VREG provides the voltage swing on this pin.
This output drives an external low-side N-channel MOSFET for the boost regulator. This output provides high
GC1 3 O peak currents to drive capacitive loads. VREG provides the voltage swing on this pin.
This pin makes a floating output drive available to control the external P-channel MOSFET. This MOSFET
GC2 4 O bypasses the boost rectifier diode or a reverse-protection diode when the boost status is non-switching or
disabled, and thus reduces power losses.
Open-drain power-good indicator pin for BuckA. An internal power-good comparator monitors the voltage at the
PGA 15 O feedback pin and pulls this output low when the output voltage falls below 93% of the set value, or if either VIN or
VBAT drops below the respective undervoltage threshold.
Open-drain power-good indicator pin for BuckB. An internal power-good comparator monitors the voltage at the
PGB 24 O feedback pin and pulls this output low when the output voltage falls below 93% of the set value, or if either VIN or
VBAT drops below the respective undervoltage threshold.
PGNDA 9 O Power-ground connection to the source of the low-side N-channel MOSFETs of BuckA.
PGNDB 30 O Power-ground connection to the source of the low-side N-channel MOSFETs of BuckB.
Switching terminal of buck regulator BuckA; provides a floating ground reference for the high-side MOSFET gate-
PHA 7 O driver circuitry and senses current reversal in the inductor when discontinuous-mode operation is desired.
Switching terminal of buck regulator BuckB; provides a floating ground reference for the high-side MOSFET gate-
PHB 32 O driver circuitry and senses current reversal in the inductor when discontinuous-mode operation is desired.
Connecting a resistor to ground on this pin sets the operating switching frequency of the buck and boost
RT 22 O controllers. A short circuit to ground on this pin defaults operation to 400 kHz for the buck controllers and 200 kHz
for the boost controller.
SA1 10 I High-impedance differential-voltage inputs from the current-sense element (sense resistor or inductor DCR) for
each buck controller. Choose the current-sense element to set the maximum current through the inductor based
on the current-limit threshold (subject to tolerances) and considering the typical characteristics across duty cycle
SA2 11 I and VIN. (SA1 positive node, SA2 negative node)
SB1 29 I High-impedance differential voltage inputs from the current-sense element (sense resistor or inductor DCR) for
each buck controller. Choose the current-sense element to set the maximum current through the inductor based
on the current-limit threshold (subject to tolerances) and considering the typical characteristics across duty cycle
SB2 28 I and VIN. (SB1 positive node, SB2 negative node)
Soft-start or tracking input for buck controller BuckA. The buck controller regulates the FBA voltage to the lower of
0.8 V or the SSA pin voltage. An internal pullup current source of 50 μA is present at the pin. Connect an
SSA 14 O appropriate capacitor here to set the soft-start ramp interval, or connect a resistor divider connected to another
supply to provide a tracking input to this pin.
Soft-start or tracking input for buck controller BuckB. The buck controller regulates the FBA voltage to the lower of
0.8 V or the SSA pin voltage. An internal pullup current source of 50 μA is present at the pin. Connect an
SSB 25 O appropriate capacitor here to set the soft-start ramp interval, or connect a resistor divider connected to another
supply to provide a tracking input to this pin.
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TPS43337-Q1
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
www.ti.com
PIN FUNCTIONS (continued)
NAME NO. I/O DESCRIPTION
If an external clock is present on this pin, the device detects it, and the internal PLL locks on to the external clock.
This overrides the internal oscillator frequency. The device can synchronize to frequencies from 150 kHz to 600
SYNC 20 I kHz. A high logic level on this pin ensures forced continuous-mode operation of the buck controllers and inhibits
transition to low-power mode. An open or low allows discontinuous-mode operation and entry into low-power
mode at light loads.
Battery input sense for the boost controller. With the boost controller enabled, if the voltage at VBAT falls below
VBAT 1 I the boost threshold, the device activates the boost controller and regulates the voltage at VIN to the programmed
boost output voltage.
Main input pin. This is the buck controller input pin as well as the output of the boost regulator. Additionally, VIN
VIN 38 I powers the internal control circuits of the device.
This pin requires an external capacitor to provide a regulated supply for the gate drivers of the buck and boost
VREG 35 O controllers. TI recommends a capacitance on the order of 4.7 μF. Either VIN or EXTSUP can power the regulator.
This pin has current-limit protection, so do not use it to drive any other loads.
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VIN 38 Internal ref
(Band gap)
37
EXTSUP
Gate Driver
Supply
35
VREG 35
RT 22
SYNC 20
4
Internal
Oscillator
SYNC and
LPM
180 deg
Source
and
Sink
Logic
GC2
ENC
18
23
14
SSA
50 µA
VIN
500 nA
ENA
16
ENA
25
SSB
50 µA
ENB
17
VIN
500 nA
ENB
COMPC
1
36
VBAT
DIV
Gm
2
DS OCP
0.2 V
3
GC1
19
ENC
AGND
PWM
Logic
Duplicate for second
Buck controller channel
VREG
5CBA
6GA1
7PHA
8GA2
9PGNDA
Slope
Comp Current sense
Amp
PWM
comp
OTA
10 SA1
12
FBA
11 SA2
SSA
15
PGA
FBA
Filter Timer
21
DLYAB
40 µA
40 µA
21
34
33
32
31
30
29
28
27
26
24
CBB
GB1
PHB
GB2
PGNDB
SB1
SB2
FBB
COMPB
PGB
Second
Buck
Controller
Channel
13
COMPA
0.8 V
OTA
VIN
VboostxV Gm
Vboost7V-th
Vboost8.85V-th
Vboost10V-th
MUX
VREG
PGNDA
Ramp
PWM
comp
PWM
Logic
TPS43337-Q1
www.ti.com
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
Figure 2. Functional Block Diagram
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50 mV / DIV
IIND
0.2 A / DIV
100 s / DIV
VOUT BuckB - AC Coupled
50 mV / DIV
IIND
0.2 A / DIV
100 s / DIV
VOUT BuckB - AC Coupled
100 mV / DIV
IIND
1 A / DIV
1 ms / DIV
VOUT BuckB - AC Coupled
50 mV / DIV
IIND
1 A / DIV
1 ms / DIV
VOUT BuckA - AC Coupled
0.0001
0.001
0.01
0.1
1
10
0
10
20
30
40
50
60
70
80
90
100
1.00E-07 1.00E-05 1.00E-03 1.00E-01
Power Loss (W)
Efficiency (%)
I_Load (A)
Efficiency, SYNC=HIGH
Efficiency, SYNC=LOW
Power Loss, SYNC=HIGH
Power Loss, SYNC=LOW
0.0001
0.001
0.01
0.1
1
10
0
10
20
30
40
50
60
70
80
90
100
1.00E-07 1.00E-05 1.00E-03 1.00E-01
Power Loss (W)
Efficiency (%)
I_Load (A)
Efficiency, SYNC=HIGH
Efficiency, SYNC=LOW
Power Loss, SYNC=HIGH
Power Loss, SYNC=LOW
TPS43337-Q1
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
www.ti.com
TYPICAL CHARACTERISTICS
BuckA EFFICIENCY AND POWER LOSSES BuckB EFFICIENCY AND POWER LOSSES
VIN = 12 V, Inductor = 10 µH, Rsense = 20 mΩ, Switching VIN = 12 V, Inductor = 4.7 µH, Rsense = 10 mΩ, Switching
Frequency = 400 kHz, EXTSUP open Frequency = 400 kHz, EXTSUP open
Figure 3. Figure 4.
BuckA LOAD STEP 1 A - 2 A BuckB LOAD STEP 1 A - 2 A
VIN = 12 V, Inductor = 10 µH, Rsense = 20 mΩ, COUT = 100 µF, VIN = 12 V, Inductor = 4.7 µH, Rsense = 10 mΩ, COUT = 320 µF,
Switching Frequency = 400 kHz Switching Frequency = 400 kHz
Figure 5. Figure 6.
BuckB LOAD STEP UP 0 A - 1 A BuckB LOAD STEP DOWN 1 A - 0 A
VIN = 12 V, Inductor = 4.7 µH, Rsense = 10 mΩ, COUT = 320 µF, VIN = 12 V, Inductor = 4.7 µH, Rsense = 10 mΩ, COUT = 320 µF,
Switching Frequency = 400 kHz Switching Frequency = 400 kHz
Figure 7. Figure 8.
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0 A
0 V
20 ms/DIV
V (BOOST INPUT)
BAT
5 V/DIV
V (BOOST OUTPUT)
IN
5 V/DIV
IIND
10 A/DIV
V (BOOST OUTPUT) = 10 V, BuckA = 5 V AT 1.5 A,
BuckB = 3.3V AT 3.5A, SWITCHING FREQUENCY = 200 kHz,
INDUCTOR = 1 µH, R = 7.5 m , C = 440 µF, C = 660 µF
IN
SENSE IN
WOUT
0V
V (BOOST INPUT) = 5 V, V (BOOST OUTPUT) = 10 V,
SWITCHING FREQUENCY = 200 kHz, INDUCTOR = 1 µH,
R = 7.5 m , C = 440 µF, C = 660 µF
BAT IN
SENSE IN OUT
W
2 µs/DIV
3-A LOAD
5 A/DIV
100-mA LOAD
5 A/DIV
0 A
0 V
20 ms/DIV
V (BOOST INPUT)
BAT
5 V/DIV
V BuckA AC-COUPLED
OUT
200 mV/DIV
V BuckB AC-COUPLED
OUT
200 mV/DIV
IIND
10 A/DIV
V (BOOST OUTPUT) = 10 V, BuckA = 5 V AT 1.5 A,
BuckB = 3.3 V AT 3.5 A, SWITCHING FREQUENCY = 200 kHz,
INDUCTOR = 1 µH, R = 7.5 m , C = 440 µF, C = 660 µF
IN
SENSE IN OUT
W
2 ms/DIV
V (BOOST OUTPUT) AC-COUPLED
IN
IIND
5 A/DIV
500 mV/DIV
V (BOOST INPUT) = 5 V, V (BOOST OUTPUT) = 10 V,
SWITCHING FREQUENCY = 200 kHz, INDUCTOR = 1 µH,
R = 7.5 m , C = 440 µF, C = 660 µF
BAT IN
SENSE IN OUT
W
Output Current (A)
Efficiency (%)
V (BOOST OUTPUT) = 10 V, SWITCHING FREQUENCY = 200 kHz,
INDUCTOR = 1 µH, R = 7.5 m
IN
SENSE W
0.01 110
0
10
20
30
40
50
60
70
80
90
100
V = 8 V
BAT
V = 5 V
BAT
V = 3 V
BAT
5 ms / DIV
VOUT BuckA, 1V / DIV
VOUT BuckB, 0.5 V / DIV
TPS43337-Q1
www.ti.com
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
TYPICAL CHARACTERISTICS (continued)
SOFT-START OUTPUTS
BuckA and BuckB
Figure 9. Figure 10.
Figure 11. Figure 12.
Figure 13. Figure 14.
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FOLDBACK CURRENT LIMIT (BUCK)
Normalized VOUT
Peak Current Sense Voltage (mV)
0 0.25 0.5 0.75 1
0
10
20
30
40
50
60
70
80
Duty Cycle (%)
Peak Current Sense Voltage (mV)
0
10
20
30
40
50
60
70
80
0 10 20 30 40 50 60 70 80 90 100
V = 8 V
IN
V = 12 V
IN
COMPx Voltage (V)
Peak Current Sense Voltage (mV)
SYNC = LOW
SYNC = HIGH
0.65 0.8 0.95 1.1 1.25 1.4 1.55
–37.5
–25
–12.5
0
12.5
25
37.5
50
62.5
75
Output Voltage (V)
Sense Current (µA)
01 2 34567 8 9 10 11 12
–0.3
–0.2
–0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
150°C
25°C
TPS43337-Q1
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
www.ti.com
TYPICAL CHARACTERISTICS (continued)
Figure 15. Figure 16.
Figure 17. Figure 18.
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Product Folder Links: TPS43337-Q1
SS
SS
I t
C (Farads)
V
´ D
=
D
SW
9
SW
X
f (X 24 k MHz)
RT
10
f 24 RT
= = W ´
= ´
TPS43337-Q1
www.ti.com
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
DETAILED DESCRIPTION
BUCK CONTROLLERS: NORMAL-MODE PWM OPERATION
Frequency Selection and External Synchronization
The buck controllers operate using constant-frequency peak-current-mode control for optimal transient behavior
and ease of component choices. The switching frequency is programmable between 150 kHz and 600 kHz,
depending upon the resistor value at the RT pin. A short circuit to ground at this pin sets the default switching
frequency to 400 kHz. the frequency is also set by a resistor at RT according to Equation 1.
(1)
For example,
600 kHz requires 40 kΩ.
150 kHz requires 160 kΩ.
Synchronizing to an external clock at the SYNC pin in the same frequency range of 150 to 600 kHz is also
possible. The device detects clock pulses at this pin, and an internal PLL locks on to the external clock within the
specified range. The device also detects a loss of clock at this pin, and on detecting this loss, the device sets the
switching frequency to the internal oscillator. The two buck controllers operate at identical switching frequencies,
180 degrees out of phase.
Enable Inputs
Independent enable inputs from the ENA and ENB pins enable the buck controllers. These are high-voltage pins,
with a threshold of 1.5 V for high level, and with direct connection directly to the battery for self-bias. The low
threshold is 0.7 V. Both these pins have internal pullup currents of 0.5 µA (typical). As a result, an open circuit on
these pins enables the respective buck controllers. When both buck controllers are disabled, the device shuts
down and consumes a current less than 4 µA.
Feedback Inputs
An internal voltage divider presets the output voltage. Connect each FBx pin to the output of the respective
regulator of the pin.
Soft-Start Inputs
In order to avoid large inrush currents, each buck controller has an independent, programmable soft-start timer.
The voltage at the SSx pins acts as the soft-start reference voltage. A 50-µA pullup current available at the SSx
pins, in combination with a suitably chosen capacitor, generates a ramp of the desired soft-start speed. After
start-up, the pullup current ensures that this node is higher than the internal reference of 0.8 V; 0.8 V then
becomes the reference for the buck controllers. Equation 2 calculates the soft-start ramp time.
where,
ISS = 50 µA (typical)
V = 0.8 V
CSS is the required capacitor for t, the desired soft-start time. (2)
Alternatively, the soft-start pins are used as tracking inputs. In this case, connect these pins to the supply to be
tracked via a suitable resistor-divider network.
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DCR
Inductor L
R11
C11
VBuckX
Sx2
2
Sx11
VC
TPS43337-Q1
TPS43337-Q1
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
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Current-Mode Operation
Peak-current-mode control regulates the peak current through the inductor to maintain the output voltage at the
set value. The error between the feedback voltage at FBx and the internal voltage divider produces a signal at
the output of the error amplifier (COMPx), which serves as the target for the peak inductor current. The device
senses the current through the inductor as a differential voltage at Sx1–Sx2 and compares the voltage with this
target during each cycle. A fall or rise in load current produces a fall or rise in voltage at FBx, causing COMPx to
fall or rise respectively, thus increasing or decreasing the current through the inductor until the average current
matches the load. This process maintains the output voltage in regulation.
The top N-channel MOSFET turns on at the beginning of each clock cycle and stays on until the inductor current
reaches the peak value. When this MOSFET turns off, and after a small delay (shoot-through delay), the lower
N-channel MOSFET turns on until the start of the next clock cycle. In dropout operation, the high-side MOSFET
stays on continuously. In every fourth clock cycle, there is a limit on the duty cycle of 95% in order to charge the
bootstrap capacitor at CBx, which allows a maximum duty cycle of 98.75% for the buck regulators. During
dropout, the buck regulator switches at one-fourth of its normal frequency.
Current Sensing and Current Limit With Foldback
Clamping of the maximum value of COMPx is such as to limit the maximum current through the inductor to a
specified value. When the output of the buck regulator (and hence the feedback value at FBx) falls to a low value
due to a short-circuit or overcurrent condition, the clamped voltage at COMPx successively decreases, thus
providing current foldback protection, which protects the high-side external MOSFET from excess current
(forward-direction current limit).
Similarly, if due to a fault condition the output is shorted to a high voltage and the low-side MOSFET turns fully
on, the COMPx node drops low. A clamp is on the lower end as well, in order to limit the maximum current in the
low-side MOSFET (reverse-direction current limit).
An external resistor senses the current through the inductor. Choose the sense resistor such that the maximum
forward-peak current in the inductor generates a voltage of 75 mV across the sense pins. This specified typical
value is for low duty cycles only. At typical duty-cycle conditions around 28% (assuming 3.4 V output and 12 V
input), 55 mV is a more reasonable value, considering tolerances and mismatches. The typical characteristics
(see Figure 18) provide a guide for using the correct current-limit sense voltage.
The current-sense pins Sx1 and Sx2 are high-impedance pins with low leakage across the entire output range,
thus allowing DCR current sensing using the dc resistance of the inductor for higher efficiency. Figure 19 shows
DCR sensing. Here, the series resistance (DCR) of the inductor is the sense element. Place the filter
components close to the device for noise immunity. Remember that while the DCR sensing gives high efficiency,
it is inaccurate due to the temperature sensitivity and a wide variation of the parasitic inductor series resistance.
Hence using the more-accurate sense resistor for current sensing is advantageous.
Figure 19. DCR Sensing Configuration
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DELAY
DLYAB
t 1 msec
=
C 1 nF
SW
S
L f
200
R
´
=
TPS43337-Q1
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SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
Slope Compensation
Optimal slope compensation, which is adaptive to changes in input voltage and duty cycle, allows stable
operation at all conditions. For optimal performance of this circuit, choose the inductor and sense resistor
according to Equation 3.
where
L is the buck regulator inductor in henries.
RSis the sense resistor in ohms.
fsw is the buck regulator switching frequency in hertz. (3)
Power-Good Outputs and Filter Delays
Each buck controller has an independent power-good comparator monitoring the feedback voltage at the FBx
pins and indicating whether the output voltage has fallen below a specified power-good threshold. This threshold
has a typical value of 93% of the regulated output voltage. The power-good indicator is available as an open-
drain output at the PGx pins. Shutdown of a buck controller causes an internal pulldown of the power-good
indicator. Connecting the external pullup resistor to a rail other than the output of that particular buck channel
causes a constant current flow through the external resistor during a powered-down state of the buck controller.
In order to avoid triggering the power-good indicators due to noise or fast transients on the output voltage, the
device uses an internal delay circuit for de-glitching. Similarly, when the output voltage returns to the set value
after a long negative transient, assertiohn of the power-good indicator (release of the open-drain pin) occurs after
the same delay. Use of this delay can pause the reset of circuits powered from the buck regulator rail. Program
the delay of this circuit by using a suitable capacitor at the DLYAB pin according to Equation 4.
(4)
When the DLYAB pin is open, the delay is set to a default value of 20 µs (typical). The power-good delay timing
is common to both the buck rails, but the power-good comparators and indicators function independently.
Light-Load PFM Mode
An external clock or a high level on the SYNC pin results in forced continuous-mode operation of the bucks.
When the SYNC pin is low or open, the buck controllers are allowed to operate in discontinuous mode at light
loads by turning off the low-side MOSFET whenever a zero-crossing in the inductor current is detected.
In discontinuous mode, as the load decreases, the duration of the clock-period when both the high-side as well
the low-side MOSFET is turned-off, increases (deep discontinuous mode). In case the duration exceeds 60% of
the clock period and VBAT > 8 V, the buck controller switches to a low-power operation mode. The design
ensures that this typically occurs at 1% of the set full-load current if the inductor and the sense resistor have
been chosen appropriately as recommended in the Slope Compensation section.
In low-power PFM mode, the buck monitors the FBx voltage and compares it with the 0.8 V internal reference
voltage through the internal voltage divider. Whenever the FBx value falls below the internal threshold, the high-
side MOSFET is turned on for a pulse duration inversely proportional to the difference VIN Sx2. At the end of
this on-time, the high-side MOSFET is turned off and the current in the inductor decays until it becomes zero.
The low-side MOSFET is not turned on. The next pulse occurs the next time FBx falls below the threshold value
which results in a constant volt-second ton hysteretic operation with a total-device quiescent-current consumption
of 34 µA when a single buck channel is active and 43 µA when both channels are active.
As the load increases, the pulses become more and more frequent and move closer to each other until the
current in the inductor becomes continuous. At this point, the buck controller returns to normal fixed-frequency
current-mode control. Another criterion to exit the low-power mode is when VIN falls low enough to require higher
than 80% duty cycle of the high-side MOSFET.
During low-power mode, the TPS43337-Q1 supports the full-current load until the transition to normal mode
takes place. The design ensures the low-power-mode exit occurs at 10% (typical) of full-load current if the
inductor and sense resistor have been chosen as recommended. Moreover, there is always a hysteresis
between the entry and exit thresholds to avoid oscillating between the two modes.
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DS
GC1
TPS43337-Q1
VIN
Vbat
RISEN
RIFLT
CIFLT
DS
GC1
TPS43337-Q1
VIN
Vbat
TPS43337-Q1
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
www.ti.com
In the event that both buck controllers are active, low-power mode is only possible when both buck controllers
have light loads that are low enough for entry into low-power mode. When the boost controller is enabled, low-
power mode is possible only if VBAT is high enough to prevent the boost from switching and if DIV is open or set
to GND. If DIV is high (VREG), low-power mode is inhibited.
Boost Controller
The boost controller has a fixed-frequency voltage-mode architecture and includes a cycle-by-cycle current-limit
protection for the external N-channel MOSFET. The switching frequency is derived from and set to one-half of
the buck-controller switching frequency. The output voltage of the boost controller at the VIN pin is set by an
internal resistor-divider network and is programmable to 7 V, 8.85 V, and 10 V based on the low, open, and high
status of the DIV pin, respectively. A change of the DIV setting is not recognized while the device is in low-power
mode.
The boost controller is enabled by the active-high ENC pin and is active when the input voltage at the VBAT pin
has crossed the unlock threshold of 8.5 V at least once. After that, the boost controller is armed and starts
switching as soon as VIN falls below the value set by the DIV pin, and regulates the VIN voltage. Thus, the boost
regulator maintains a stable input voltage for the buck regulators during transient events such as a cranking
pulse at VBAT.
Whenever the voltage at the DS pin exceeds 200 mV, the boost-external MOSFET is turned off by pulling the
CG1 pin low. By connecting the DS pin to the drain of the MOSFET or to a sense resistor between the MOSFET
source and ground, cycle-by-cycle overcurrent protection for the MOSFET can be achieved. The on-resistance of
the MOSFET or the value of the sense resistor must be chosen in such a way that the on-state voltage at DS
does not exceed 200 mV at the maximum load and minimum input-voltage conditions. When a sense resistor is
used, connecting a filter network between the DS pin and the sense resistor is recommended for better noise
immunity.
The boost output (VIN) is also used to supply other circuits in the system, however, they should be high-voltage
tolerant. The boost output is regulated to the programmed value only when VIN is low, and so VIN can reach
battery levels.
Figure 20. External Drain-Source Voltage Sensing
Figure 21. External Current Shunt Resistor
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SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
Table 1. Mode Control
SYNC Comments
Terminal
External clock Device in forced into continuous mode, internal PLL locks into the external clock between 150 kHz and 600 kHz
Low or open Device can enter discontinuous mode. Automatic LPM entry and exit, depending on load conditions
High Device in forced into continuous mode
Table 2. Mode of Operation
ENABLE AND INHIBIT PINS DRIVER STATUS DEVICE STATUS QUIESCENT CURRENT
ENA ENB ENC SYNC BUCK CONTROLLERS BOOST CONTROLLER
Low Low Low X Shutdown Disabled Shutdown Approximately 4 µA
Low BuckB: LPM enabled Approximately 34 µA (light loads)
Low High Low BuckB running Disabled
High BuckB: LPM inhibited mA range
Low BuckA: LPM enabled Approximately 34 µA (light loads)
High Low Low BuckA running Disabled
High BuckA: LPM inhibited mA range
BuckA and BuckB: LPM
Low Approximately 43 µA (light loads)
enabled
BuckA and BuckB
High High Low Disabled
running BuckA and BuckB: LPM
High mA range
inhibited
Low Low Low X Shutdown Disabled Shutdown Approximately 4 µA
Approximately 54 µA (no boost,
Low BuckB: LPM enabled
Boost running for VIN < set light loads)
Low High High BuckB running boost output
High BuckB: LPM inhibited mA range
Approximately 54 µA (no boost,
Low BuckA: LPM enabled
Boost running for VIN < set light loads)
High Low High BuckA running boost output
High BuckA: LPM inhibited mA range
BuckA and BuckB: LPM Approximately 68 µA (no boost,
Low enabled light loads)
BuckA and BuckB Boost running for VIN < set
High High High running boost output BuckA and BuckB: LPM
High mA range
inhibited
Gate Driver Supply (VREG, EXTSUP)
The gate drivers of the buck and boost controllers are supplied from an internal linear regulator whose output
(5.8 V, typical) is available at the VREG pin and requires decoupling with a ceramic capacitor in the range of 3.3
µF to 10 µF. This pin has internal current-limit protection and should not be used to power any other circuits.
The VREG linear regulator is powered from VIN by default when the EXTSUP voltage is lower than 4.6 V
(typical). In case VIN is expected to go to high levels, there can be excessive power dissipation in this regulator,
especially at high switching frequencies and when using large external MOSFETs. In this case, powering this
regulator from the EXTSUP pin is advantageous, which can be connected to a supply lower than VIN but high
enough to provide the gate drive. When EXTSUP is connected to a voltage greater than 4.6 V, the linear
regulator automatically switches to EXTSUP as its input to provide this advantage. Efficiency improvements are
possible when one of the switching regulator rails from the TPS43337-Q1 or any other voltage available in the
system is used to power EXTSUP. The maximum voltage that should be applied to EXTSUP is 9 V.
Copyright © 2013, Texas Instruments Incorporated Submit Documentation Feedback 19
Product Folder Links: TPS43337-Q1
C14
Fuse (S1)
Q6
C13
C15C17
C16
D2
R10
Q7
D3
D1
TPS43337-Q1
GC2
VIN
DS
GC1
COMPC
VBAT
R9
Vbat
L3
LDO
EXTSUP
LDO
VIN
VIN EXTSUP
VREG
typ 5.8 V typ 7.5 V
typ 4.6 V
TPS43337-Q1
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
www.ti.com
Figure 22. Internal Gate-Driver Supply
Using a voltage above 5.8 V (sourced by VIN) for EXTSUP is advantageous as it provides a large gate drive and
therefore better on-resistance of the external MOSFETs.
During low-power mode, the EXTSUP functionality is not available. The internal regulator operates as a shunt
regulator powered from VIN and has a typical value of 7.5 V. Current-limit protection for VREG is available in
low-power mode as well. If EXTSUP is unused, leave the pin open without a capacitor installed.
External P-Channel Drive (GC2) and Reverse Battery Protection
The TPS43337-Q1 includes a gate driver for an external P-channel MOSFET, which can be connected across
the rectifier diode of the boost regulator which is useful to reduce power losses when the boost controller is not
switching. The gate driver provides a swing of 6 V typical below the VIN voltage in order to drive a P-channel
MOSFET. When VBAT falls below the boost enable threshold, the gate driver turns off the P-channel MOSFET,
and the diode is no longer bypassed.
The gate driver can also be used to bypass any additional protection diodes connected in series as shown in
Figure 23.Figure 24 also shows a different scheme of reverse battery protection which may require only a
smaller-sized diode to protect the N-channel MOSFET, as the diode conducts only for a part of the switching
cycle. Because the diode is not always in the series path, the system efficiency improves.
Figure 23. Reverse-Battery-Protection Option for Buck-Boost Configuration
20 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated
Product Folder Links: TPS43337-Q1
TPS43337-Q1
GC2
VBAT
Fuse
VIN
DS
GC1
COMPC
VBAT
TPS43337-Q1
www.ti.com
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
Figure 24. Reverse-Battery-Protection Option for Buck-Boost Configuration
Undervoltage Lockout and Overvoltage Protection
The TPS43337-Q1 starts up at a VIN voltage of 6.5 V (minimum), required for the internal supply (VREG). Once
the has started up, it operates down to a VIN voltage of 3.6 V; below this voltage level, the undervoltage lockout
disables the device.
NOTE
If VIN drops, VREG drops as well, reducing the gate-drive voltage, while the digital logic
remains fully functional. Even if ENC is high, exceeding the boost-unlock voltage of
typically 8.5 V one time is required before boost activation takes place (see the Boost
Controller section).
A voltage of 46 V at VIN triggers the overvoltage comparator, which shuts down the device. In order to prevent
transient spikes from shutting down the device, the undervoltage and overvoltage protection have filter times of 5
µs (typical).
When the voltages return to the normal-operating region, the enabled switching regulators start including a new
soft-start ramp for the buck regulators.
When the boost controller is enabled, a voltage less than 1.9 V (typical) on VBAT triggers an undervoltage
lockout and pulls the boost gate driver (GC1) low (this action has a filter delay of 5 µs, typical). As a result, VIN
falls at a rate dependent on the capacitor and load, eventually triggering VIN undervoltage. A short falling
transient at VBAT even lower than 2 V can thus be survived, if VBAT returns above 2.5 V before VIN is
discharged to the undervoltage threshold.
Thermal Protection
The TPS43337-Q1 protects itself from overheating using an internal thermal shutdown circuit. If the die
temperature exceeds the thermal shutdown threshold of 165°C due to excessive power dissipation (for example,
due to fault conditions such as a short circuit at the gate drivers or VREG), the controllers are turned off, and
then restarted when the temperature has fallen by 15°C.
Copyright © 2013, Texas Instruments Incorporated Submit Documentation Feedback 21
Product Folder Links: TPS43337-Q1
COMPx
+
-
VIN
VREF
7V
8.85
V
10 V
C 1
C 2
R3
CO
RESR
OTA-gmEA
TPS43337-Q1
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
www.ti.com
APPLICATION INFORMATION
The following example illustrates the design process and component selection for the TPS43337-Q1. The design
goal parameters are given in Table 3.
Table 3. Design Goal Parameters Example
PARAMETER VBUCKA VBUCKB BOOST
VIN 6 to 30 V VIN 6 to 30 V VBAT = 5 (cranking pulse
Input voltage 12 V - typical 12 V - typical input) to 30 V
Output voltage, VOUTx 3.396 V 1.235 V 10 V
Maximum output current, IOUTx 3 A 2 A 2.5 A
Load step output tolerance, VOUT +±0.2 V ±0.12 V ±0.5 V
ΔVOUT(Ripple)
Current output load step, IOUTx 0.1 to 3 A 0.1 to 2 A 0.1 to 2.5 A
Converter switching frequency, fSW 400 kHz 400 kHz 200 kHz
This example is a starting point and theoretical representation of the values to be used for the application; further
optimization of the components derived may be required to improve the performance of the device.
Boost Component Selection
A boost converter operating in continuous-conduction mode (CCM) has a right-half-plane (RHP) zero in the
transfer function. The RHP zero is inversely related to the load current and inductor value and directly related to
the input voltage. The RHP zero limits the maximum bandwidth achievable for the boost regulator. If the
bandwidth is too close to the RHP zero frequency, the regulator may become unstable.
Thus, for high-power systems with low input voltages, a low inductor value is chosen. This value increases the
amplitude of the ripple currents in the N-channel MOSFET, the inductor and the capacitors for the boost
regulator. They must be designed with the ripple/RHP zero trade-off in mind and considering the power
dissipation effects in the components due to parasitic series resistance.
A boost converter that operates in the discontinuous mode does not contain the RHP-zero in transfer function.
However, designing for the discontinuous mode demands an even lower inductor value that has high ripple
currents. Also, ensure that the regulator never enters the continuous-conduction mode; otherwise, the regulator
becomes unstable.
Figure 25. Boost Compensation Components
This design is done assuming continuous-conduction mode. During light load conditions, the boost converter
operates in discontinuous mode without affecting stability. Hence, the assumptions here cover the worst case for
stability.
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BAT min
RHP
In max
V
f 32 kHz
2 I L
= =
p ´ ´
SENSE
0.2 V
R 25 m
7.85 A
= = W
RIPPLE
PEAK INmax
I3.1 A
I I 6.3 A + 7.85 A
2 2
= + = =
BAT ON BAT
INripplemax INripple max SW
V t V5 V
L 4.9 H
I I 2 f 2.52 A 2 200 kHz
´
= = = m
´ ´ ´ ´
=
BAT
31.3 W
I (at V = 5 V) 6.3 A
INmax 5 V
= =
OUT
INmax
P25 W
P 31.3 W
Efficiency 0.8
= = =
TPS43337-Q1
www.ti.com
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
Boost Maximum Input Current IIN_MAX
The maximum input current is drawn at the minimum input voltage and maximum load. The efficiency for VBAT =
5 V at 2.3 A is 80%, based on the typical characteristics plot.
(5)
Hence,
(6)
Boost Inductor Selection, L
Allow input ripple current of 40% of IIN max at VBAT =5V
(7)
Choose a lower value of 3.9 µH in order to ensure a high RHP-zero frequency while making a compromise that
expects a high current ripple. This inductor selection also makes the boost converter operate in discontinuous
conduction mode, where it is easier to compensate.
The inductor saturation current must be higher than the peak inductor current and some percentage higher than
the maximum current-limit value set by the external resistive sensing element.
This rating should be determined at the minimum input voltage, maximum output current, and maximum core
temperature for the application.
Inductor Ripple Current, IRIPPLE
Based on an Inductor value of 3.9 µH, the ripple current is approximately 3.1 A.
Peak Current in Low-Side FET, IPEAK
(8)
Based on this peak current value (see Equation 8), the external current-sense resistor RSENSE is calculated in .
Select 20 m, allowing for tolerance.
The filter component values RIFLT and CIFLT for current sense are 1.5 kΩand 1 nF, respectively, which allows for
good noise immunity.
Right Half-Plane Zero RHP Frequency, fRHP
(9)
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Product Folder Links: TPS43337-Q1
ESR
ESR ESR
OUTx ESR
LC
OUTx
1
f Hz, assume 40 m
2 C R
1
f 6 kHz
2 680 F 0.04
1 1
f 3.1 kHz
2 L C 2 4 H 680 F
R= = W
p ´ ´
= =
p ´ m ´
= = =
p ´ ´ p ´ m ´ m
RHP
22
LC
BAT min
INmax
OUTx
INmax
OUTx
BAT min
OUTx min
f
f
10
V
10
2 I L
2 L C
C L 3.9 H
C 635 F
10 I 10 6.3 A
V 5 V
£
£p ´ ´
p ´ ´
³ ´ = ´ m
³ m
´
æ ö æ ö
´
ç ÷ ç ÷
è ø
è ø
TPS43337-Q1
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
www.ti.com
Output Capacitor, CO
To ensure stability, the output capacitor COis chosen such that
(10)
Select COUTx = 680 µF.
This capacitor is usually aluminum electrolytic with ESR in the tens-of-milliohms which is good for loop stability,
because it provides a phase boost due to the ESR. The output filter components L and C create a double pole
(180 degree phase-shift) at a frequency fLC, and the ESR of the output capacitor RESR creates a zero for the
modulator at frequency fESR. These frequencies can be determined by Equation 11.
(11)
This satisfies fLC 0.1 fRHP.
Bandwidth of Boost Converter, fC
Use the following guidelines to set the frequency poles, zeroes, and crossover values for the trade-off between
stability and transient response:
fLC < fESR< fC< fRHP Zero
fC< fRHP Zero / 3
fC< fSW / 6
fLC < fC/ 3
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RIPPLE
C1
SW IN
RIPPLE
IN
SW C1
ESR RIPPLE ESR
I
V 10 mV
8 f C
I
C 194-μF
8 f V
V I R 40 mV
D = =
´ ´
= =
´ ´ D
D = ´ =
6
G/20
2
OUTx
C
SW
10
R3 7.2 k
85 10 V
10 10
C1 22 nF
2 f R3 2 10 kHz 7.2 k
C1 22 nF
C2 223 pF choose 220 pF
2 7.2 k 22nF 1
2 R3 C1 1
A / V
f 200 kHz
2
2
-
= = W
´ ´
= = =
p ´ ´ p ´ ´ W
= = =
p ´ W ´ ´ -
p ´ ´ ´ -
æ ö æ ö
ç ÷
ç ÷ è ø
è ø
C C
LC ESR
f f
G 40 log 20 log
f f
10 kHz 10 kHz
G 40 log 20 log 15.9 dB
3.1kHz 6 kHz
= -
= - =
æ ö æ ö
ç ÷ ç ÷
ç ÷ ç ÷
è ø è ø
æ ö æ ö
ç ÷ ç ÷
è ø è ø
OUTx
OUTx
OUTx ESR OUTx
C
I
V R I
4 C f
2.5 A
0.04 2.5 A 0.19 V
4 660 F 10 kHz
D
D = ´ D + ´ ´
= W ´ + =
´ m ´
TPS43337-Q1
www.ti.com
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
Output Ripple Voltage Due to Load Transients, VO
Assume a bandwidth of fC= 10 kHz.
(12)
Because the boost converter is active only during brief events such as a cranking pulse, and the buck converters
are high-voltage tolerant, a higher excursion on the boost output may be tolerable in some cases. In such cases,
smaller component choices for the boost output may be used.
Selection of Components for Type II Compensation
The required loop gain for unity gain bandwidth (UGB) is shown in Equation 13.
(13)
The boost converter error amplifier (OTA) has a Gm that is proportional to the VBAT voltage which allows a
constant loop response across the input voltage range and makes it easier to compensate by removing the
dependency on VBAT.
(14)
Input Capacitor, CIN
The input ripple required is lower than 50 mV.
(15)
Therefore, TI recommends 220 µF with 10-mΩESR.
Copyright © 2013, Texas Instruments Incorporated Submit Documentation Feedback 25
Product Folder Links: TPS43337-Q1
SENSE
55 mV
R 18 m
3 A
= = W
O
ON min
IN max SW
V3.4 V
t 283 ns
V f 30 V 400 kHz
= = =
´ ´
2
2
I Pk
BOOSTFET Pk DS(on) r f sw
I Pk
BOOSTFET
P (I ) r (1 TC) D (t t ) f
P (7.85 A) 0.02 (1 0.4) 0.53 (20 ns 20 ns) 200 kHz 1.07 W
V I
2
V I
2
= ´ + ´ + ´ + ´
= ´ W ´ + ´ + ´ + ´ =
´
æ ö
ç ÷
è ø
´
æ ö
ç ÷
è ø
D D(PEAK ) F
INMIN
OUT F
D
P I V (1 D)
P 7.85 A 0.6 V (1 0.53) 2.2 W
V5V
D 1 1 0.53
V V 10V 0.6V
= ´ ´ -
= ´ ´ - =
= - = - =
+ +
TPS43337-Q1
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
www.ti.com
Output Schottky Diode D1 Selection
A Schottky diode with low forward-conducting voltage VFover temperature and fast switching characteristics is
required to maximize efficiency. The reverse breakdown voltage should be higher than the maximum input
voltage, and the component should have low reverse-leakage current. Additionally, the peak forward current
should be higher than the peak inductor current. The power dissipation in the Schottky diode is given in
Equation 16.
(16)
Low-Side MOSFET (BOT_SW3)
(17)
The times trand tfdenote the rising and falling times of the switching node and are related to the gate-driver
strength of the TPS43337-Q1 and gate Miller capacitance of the MOSFET. The first term denotes the conduction
losses, which are minimized when the on-resistance of the MOSFET is low. The second term denotes the
transition losses which arise due to the full application of the input voltage across the drain-source of the
MOSFET as it turns on or off. They are higher at high output currents and low input voltages (due to the large
input peak current) and when the switching time is low.
NOTE: The on-resistance rDS(on) has a positive temperature coefficient, which produces the (TC = d × ΔT) term
that signifies the temperature dependence. (Temperature coefficient d is available as a normalized value from
MOSFET data sheets and can be assumed to be 0.005 / ºC as a starting value.)
BuckA Component Selection
Minimum ON Time, tON min
(18)
As shown in Equation 18, tON min is higher than the minimum duty cycle specified (100 ns, typical). Hence the
minimum duty cycle is achievable at this frequency.
Current-Sense Resistor RSENSE
Based on the typical characteristics for VSENSE limit with VIN versus duty cycle, the sense limit is approximately 70
mV (at VIN = 12 V and duty cycle of 3.4 V / 12 V = 0.283). Allowing for tolerances and ripple currents, choose
VSENSE maximum of 55 mV.
Select 18 m.
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OUTA
OUTA OUTA
C OUTA
I2.9 A
V I ESR 2.9 A 10 m 174 mV
4 f C 4 50 kHz 100 F
D
D = + D ´ = + ´ W =
´ ´ ´ ´ m
OUTA(Ripple)
OUTA(Ripple) OUTA(Ripple)
SW OUTA
I1 A
V I ESR 1 A 10 m 13.1mV
8 f C 8 400 kHz 100 F
= + ´ = + ´ W =
´ ´ ´ ´ m
OUTA
OUTA
SW OUTA
2 I 2 2.9 A
C 72.5 F
f V 400 kHz 0.2 V
´ D ´
» = = m
´ D ´
SENSE
FLR
SW
R18 m
L K 200 9.2 H
f 400 kHz
W
= ´ = ´ = m
TPS43337-Q1
www.ti.com
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
Inductor Selection L
As explained in the description of the buck controllers (see Detailed Description), for optimal slope compensation
and loop response, the inductor should be chosen such that:
KFLR = Coil selection constant = 200 (19)
Choose a standard value of 10 µH. For the buck converter, the inductor saturation currents and core should be
chosen to sustain the maximum currents.
Inductor Ripple Current IRIPPLE
At the nominal input voltage of 12 V, this gives a ripple current of 25% of IOUTmax 1 A.
Output Capacitor CO
Select an output capacitance COof 100 µF with low ESR in the range of 10 m. This gives VO(Ripple) 15 mV
and V drop of 180 mV during a load step, which does not trigger the power-good comparator and is within the
required limits.
(20)
(21)
(22)
Bandwidth of Buck Converter fC
Use the following guidelines to set frequency poles, zeroes, and crossover values for the trade-off between
stability and transient response.
Crossover frequency fCbetween fSW / 6 and fSW / 10. Assume fC= 50 kHz.
Select the zero fzfC/ 10
Make the second pole fP2 fSW / 2
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Product Folder Links: TPS43337-Q1
P2
1 1
f2 R3 C2 2 18 k 47 pF 188 kHz=
p ´ ´ p ´ W ´
= =
Z1
1 1
f
2 R3 C1 2 18 k 1.8 nF
4.9 kHz=
p ´ ´ p ´ W ´
= =
BUCK CFB REF
C
OUTA OUT
C
Gm R3 K V
f2 C V
1mS 18 k 6.9 S 0.8 V
f 46.5 kHz
2 100 μF 3.4 V
´ ´
= ´
p ´
´ W ´ ´
= =
p ´ ´
SW
C1 1.8 nF
C2 45 pF
2 18 k 1.8 nF 1
2 R3 C1 1
f 400 kHz
2
2
= = =
p ´ W ´ -
p ´ ´ -
æ ö æ ö
ç ÷
ç ÷ è ø
è ø
C OUTA OUTA
BUCK CFB REF BUCK CFB REF
2 f V C 2 50 kHz 3.4 V 100 F
R3 19 k
Gm K V Gm K V
p ´ ´ ´ p ´ ´ ´ m
= = = W
´ ´ ´ ´
VREF
RLCOMP
Bx
Type 2A
GmBUCK
RESR
C2
C1
R3
VOUT
R0
COUT
F
TPS43337-Q1
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
www.ti.com
Selection of Components for Type II Compensation
Figure 26. Buck Compensation Components
Use standard value of R3 = 18 k
where:
VO= 3.4 V
CO= 100 µF
Gm = 1 mS
VREF = 0.8 V
KCFB = 0.125 / RSENSE = 6.9 (0.125 is an internal constant) (23)
(24)
Use standard value of 1.8 nF.
(25)
Use standard value of 47 pF.
The resulting bandwidth of buck converter fC
(26)
fCis close to the target bandwidth of 50 kHz.
The resulting zero frequency fZ1
(27)
fZ1 is close to the fC/ 10 guideline of 5 kHz
The second pole frequency fP2
(28)
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BUCK CFB REF
C
O
OUTB
C
Gm R3 K V
f
2 C V
1 mS 12 k 4.16 0.8
f 51.5 kHz
2 100 F 1.235 V
´ ´
=p ´
´ W ´ ´
= =
p ´ m ´
´
SW
C1
C2
2 R3 C1
2.7 nF 68 pF, choose 68 pF
2 12 k 2.7 nF
f1
2
400 kHz 1
2
=
p ´ ´ ´
= =
p ´ W ´ ´
æ ö -
ç ÷
è ø
æ ö -
ç ÷
è ø
C
10 10
C1 2.7 nF, choose 2.7nF
2 R3 f 2 12 k 50 kHz
= = =
p ´ ´ p ´ W ´
C OUTB OUTB
BUCK CFB REF
2 f V C
R3
Gm K V
2 50 kHz 1.235 V 100 F
1 mS 4.16S 0.8V
11.7 k
p ´ ´ ´
=´ ´
p ´ ´ ´ m
´ ´
= = W
OUTB
OUTB OUTB
C OUTB
I1.9 A
V I ESR 1.9 A 10 m 114 mV
4 f C 4 50 kHz 100 F
D
D = + D ´ = + ´ W =
´ ´ ´ ´ m
OUTB(Ripple)
OUTB(Ripple) OUTB(Ripple)
SW OUTB
I0.4 A
V I ESR 0.4 A 10 m 5.3 mV
8 f C 8 400 kHz 100 F
= + ´ = + ´ W =
´ ´ ´ ´ m
OUTB
OUTB
SW OUTB
2 I 2 1.9 A
C 46 F
f V 400 kHz 0.12 V
´ D ´
» = = m
´ D ´
SENSE
60 mV
R
2A
30
L 200
400 kHz
30 m
m15 H
=
= ´
= W
W= m
OUTB
ON min
IN max SW
V1.235 V
t 103 ns
V f 30 V 400 kHz
= = =
´ ´
TPS43337-Q1
www.ti.com
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
fP2 is close to the fSW / 2 guideline of 200 kHz. Hence, all requirements for a good loop response are satisfied.
BuckB Component Selection
Using the same method as VBUCKA, the following parameters and components are realized in Equation 29.
(29)
This tONmin is on the edge of the minimum duty cycle specified (100 ns, typical); expect pulse-skipping at high VIN.
choose 30 m, 15 µH.
Iripple current 0.4 A (approx. 20% of IO max)
Select an output capacitance COof 100 µF with low ESR in the range of 10 m. This gives VO(ripple) 7.5 mV
and V drop of 120 mV during a load step.
Assume fC= 50 kHz.
(30)
(31)
(32)
(33)
Use standard value of R3 = 12 k.
(34)
(35)
(36)
fCis close to the target bandwidth of 50 kHz.
Copyright © 2013, Texas Instruments Incorporated Submit Documentation Feedback 29
Product Folder Links: TPS43337-Q1
2
BuckLOWERFET OUT DS(on) F OUT d SW
P (I ) r (1 TC) (1 D) V I (2 t ) f= ´ + ´ - + ´ ´ ´ ´
2IN OUT
BuckTOPFET OUT DS(on) r f SW
2
V I
P (I ) r (1 TC) D (t t ) f
´
æ ö
= ´ + ´ + ´ + ´
ç ÷
è ø
P2
1 1
f2 R3 C2 2 12k 68 pF 195 kHz=
p ´ ´ p ´ W ´
= =
Z1
1 1
f 4.9 kHz
2 R3 C1 2 12 k 2.7 nF
= = =
p ´ ´ p ´ W ´
TPS43337-Q1
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
www.ti.com
The resulting zero frequency fZ1
fZ1 is close to the fC/ 10 guideline of 5 kHz.
The second pole frequency fP2
(37)
fP2 is close to the fSW / 2 guideline of 200 kHz.
Hence, all requirements for a good loop response are satisfied.
BuckX High-Side and Low-Side N-Channel MOSFETs
The gate-drive supply for these MOSFETs is supplied by an internal supply which is 5.8 V (typical) under normal
operating conditions. The output is a totem pole, allowing full voltage drive of VREG to the gate with peak output
current of 1.2 A. The high-side MOSFET is referenced to a floating node at the phase terminal (PHx) and the
low-side MOSFET is referenced to the power ground (PGx) terminal. For a particular application, these
MOSFETs should be selected with consideration for the following parameters: rds(on), gate charge Qg, drain-to-
source breakdown voltage BVDSS, maximum dc current IDC(max), and thermal resistance for the package.
The times trand tfdenote the rising and falling times of the switching node and are related to the gate-driver
strength of the TPS43337-Q1 and gate Miller capacitance of the MOSFET. The first term denotes the conduction
losses, which are minimized when the on-resistance of the MOSFET is low. The second term denotes the
transition losses, which arise due to the full application of the input voltage across the drain-source of the
MOSFET as it turns on or off. They are lower at low currents and when the switching time is low.
(38)
(39)
In addition, during the dead time tdwhen both the MOSFETs are off, the body diode of the low-side MOSFET
conducts, increasing the losses which is denoted by the second term in the Equation 39. Using external Schottky
diodes in parallel to the low-side MOSFETs of the buck converters helps to reduce this loss.
Note that rDS(on) has a positive temperature coefficient which is accounted for in the TC term for rDS(on), TC = d ×
ΔT[°C]. The temperature coefficient, d, is available as a normalized value from MOSFET data sheets and can be
assumed to be 0.005 / ºC as a starting value.
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Product Folder Links: TPS43337-Q1
VBAT
TPS43337-Q1
5 V to 30 V
VBAT
DS
GC1
GC2
CBA
GA1
PHA
GA2
PGNDA
SA1
SA2
FBA
COMPA
SSA
PGA
ENA
ENB
COMPC
ENC SYNC
DLYAB
RT
AGND
PGB
SSB
COMPB
FBB
SB2
SB1
PGNDB
GB2
PHB
GB1
CBB
VREG
DIV
EXTSUP
VIN
3.9 µH
0.1 µF
0.1µF
500 nF
500 nF
1 nF
5k Ω5k Ω
100 µF
COUTB
15 µH
0.03 Ω V1.235 V, 2 W
BuckB
10 µH
10µF 680 µF
COUT1
100µF
COUTA
V3.4 V, 10.2 W
BuckA 0.018 Ω
7.2 kΩ
22 nF
220 pF
18 kΩ
1.8 nF
47 pF 12 kΩ 2.7 nF 68 pF
TOP-SW1
BOT-SW1 BOT-SW2
TOP-SW2
TOP-SW3
BOT-SW3
C
220 µF
IN
1kΩ
L1
L2 L3
D1
0.025Ω
BOOST 10V, 25W
1.5 kΩ
1nF
TPS43337-Q1
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SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
Schematic
The following section summarizes the previously calculated example and gives a schematic and component
proposals.
Table 4. Application Example
PARAMETER VBUCKA VBUCKB BOOST
VIN = 6 to 30 V VIN = 6 to 30 V VBAT = 5 (cranking pulse
Input voltage 12 V - typical 12 V - typical input) to 30 V
Output voltage, VOUTx 3.396 V 1.235 V 10 V
Maximum output current, IOUTx 3 A 2 A 2.5 A
Load-step output tolerance, VOUT +ΔVOUT(Ripple) ±0.2 V ±0.12 V ±0.5 V
Current output load step, IOUTx 0.1 to 3 A 0.1 to 2 A 0.1 to 2.5 A
Converter switching frequency, fSW 400 kHz 400 kHz 200 kHz
Figure 27. Schematic - Application Example
Table 5. Application Example - Component Proposals
Name Component Proposal Value
L1 MSS1278T-392NL (Coilcraft) 3.9 µH
L2 MSS1278T-103ML (Coilcraft) 10 µH
L3 MSS1278T-153ML (Coilcraft) 15 µH
D1 SK103 (Micro Commercial Components)
TOP_SW3 IRF7416 (International Rectifier)
TOP_SW1, TOP_SW2 Si4840DY-T1-E3 (Vishay)
BOT_SW1, BOT_SW2 Si4840DY-T1-E3 (Vishay)
BOT_SW3 IRFR3504ZTRPBF (International Rectifier)
COUT1 EEVFK1J681M (Panasonic) 680 µF
COUTA, COUTB ECASD91A107M010K00 (Murata) 100 µF
CIN EEVFK1J221Q (Panasonic) 220 µF
Copyright © 2013, Texas Instruments Incorporated Submit Documentation Feedback 31
Product Folder Links: TPS43337-Q1
TPS43337-Q1
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
www.ti.com
Power Dissipation Derating Profile, 38-Pin HTTSOP Package With PowerPAD Package
Figure 28. Power Dissipation Derating Profile Based on High-K JEDEC PCB
PCB Layout Guidelines
Grounding and PCB Circuit Layout Considerations
Boost Converter
1. The path formed from the input capacitor to the inductor and BOT_SW3 with the low-side current-sense
resistor should have short leads and PC trace lengths. The same applies for the trace from the inductor to
the Schottky diode D1 to the COUT1 capacitors. The negative terminal of the input capacitor and the
negative terminal of the sense resistor must be connected together with short trace lengths.
2. The overcurrent-sensing shunt resistor may require noise filtering, and this capacitor should be close to the
IC pin.
Buck Converter
1. Connect the drains of TOP_SW1 and TOP_SW2 together with the positive terminal of input capacitor
COUT1. The trace length between these terminals should be short.
2. Connect a local decoupling capacitor between the drain of TOP_SWx and the source of BOT_SWx.
3. The Kelvin-current sensing traces for the shunt resistor should have minimum trace spacing and be routed
parallel to each other. Any filtering capacitors for noise should be placed near the IC pins.
4. Connect the positive terminal of the respective output capacitor COUTA or COUTB to the respective feedback
input FBA or FBB. Do not connect these traces near any switching nodes or high-current traces.
Other Considerations
1. PGNDx and AGND should be shorted to the thermal pad. Use a star-ground configuration if connecting to a
non-ground-plane system. Use tie-ins for the EXTSUP capacitor, compensation-network ground, and
voltage-sense-feedback ground networks to this star ground.
2. Connect a compensation network between the compensation pins and IC signal ground. Connect the
oscillator resistor (frequency setting) between the RT pin and IC signal ground. These sensitive circuits
should not be located near nodes showing high dv/dt; these include the gate-drive outputs, phase pins, and
boost circuits (bootstrap).
3. Reduce the surface area of the high-current-carrying loops to a minimum, by ensuring optimal component
placement. Ensure the bypass capacitors are located as close as possible to their respective power and
ground pins.
32 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated
Product Folder Links: TPS43337-Q1
VBAT
DS
GC1
GC2
CBA
GA1
PHA
GA2
PGNDA
SA1
SA2
FBA
COMPA
SSA
PGA
ENA
ENB
COMPC
ENC
V IN
EXTSUP
D IV
VREG
CBB
GB1
PHB
GB2
PGNDB
SB1
SB2
FBB
COMPB
SSB
PGB
AGND
RT
DLYAB
SYNC
VBUCKA
VBUCKB
POW ER
INPUT
VBOOST
Exposed Pad
connec ted to GND
P lane
M ic rocon tro lle r
Powe r L ines
Connec tion to GND P lane o fPCB th rough v ias
Connec tion to top /bo ttom o f PCB th rough v ias
Vo ltage R a ilO u tpu ts
TPS43337-Q1
www.ti.com
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
PCB Layout
Copyright © 2013, Texas Instruments Incorporated Submit Documentation Feedback 33
Product Folder Links: TPS43337-Q1
TPS43337-Q1
SLVSBC2A AUGUST 2013REVISED SEPTEMBER 2013
www.ti.com
REVISION HISTORY
Changes from Original (August 2013) to Revision A Page
Changed document status from Product Preview to Production Data ................................................................................. 1
34 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated
Product Folder Links: TPS43337-Q1
PACKAGE OPTION ADDENDUM
www.ti.com 10-Sep-2013
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
TPS43337QDAPRQ1 ACTIVE HTSSOP DAP 38 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 125 TPS43337
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TPS43337QDAPRQ1 HTSSOP DAP 38 2000 330.0 24.4 8.6 13.0 1.8 12.0 24.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Dec-2017
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS43337QDAPRQ1 HTSSOP DAP 38 2000 367.0 367.0 45.0
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Dec-2017
Pack Materials-Page 2
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