General Purpose Transistors General Purpose Transistors FHS3904 DESCRIPTION & FEATURES SOT-23 Low Leakage Current ICEX=50nA(Max.)VCE=30VVEB=3V Low Saturation Voltage VCE(sat)=0.3V(Max.)IC=50mAIB=5mA Complementary to the 3906 PIN ASSIGNMENT PIN NAME FUNCTION PIN NUMBER SOT-23 B 1 BASE E 2 EMITTER C 3 COLLECTOR MAXIMUM RATINGS(Ta=25) CHARACTERISTIC Symbol Rating Unit Collector-Emitter Voltage VCEO 40 Vdc - Collector-Base Voltage VCBO 60 Vdc - Emitter-Base Voltage VEBO 5 Vdc - Collector Current--Continuous IC 200 mAdc - THERMAL CHARACTERISTICS CHARACTERISTIC Symbol Max Unit Total Device Dissipation 225 mW FR-5 Board(1) (TA=25 =25) PD mW/ Derate above25 25 1.8 /W Thermal Resistance Junction to Ambient RJA 556 Total Device Dissipation Alumina Substrate,(2) TA=25 300 mW PD mW/ Derate above25 25 2.4 /W Thermal Resistance Junction to Ambient RJA 417 150 Tj, Junction and Storage Temperature Tstg -55 ~150 DEVICE MARKING FHS3904=1AM ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted 25) Symbol Test Condition Min Type Max Unit Characteristic Collector Cutoff Current VCE=30Vdc, -- -- ICEX 50 nAdc VEB=3.0 Vdc Base Cutoff Current VCE=30Vdc, -- -- IBEX 50 nAdc VEB=3.0Vdc Collector-Emitter Breakdown Voltage(3) - V(BR)CEO IC=1.0mAdc, IB=0 40 -- -- Vdc Collector-Base Breakdown Voltage - V(BR)CBO IC=10Adc, IE=0 60 -- -- Vdc Emitter-Base Breakdown Voltage - V(BR)EBO IE=10Adc, IC=0 5 -- -- Vdc 1 General Purpose Transistors General Purpose Transistors DC Current Gain Collector-Emitter Saturation Voltage(3) VCEsat VBEsat Current-Gain-Bandwidth Product - fT Output Capacitance Cobo Input Capacitance Cibo Input Impedance hie Voltage Feedback Ratio hre Small-Signal Current Gain hfe Output Admittance *hoe Noise Figure IC=0.1mAdc, VCE=1.0Vdc IC=1.0mAdc, VCE=1.0Vdc IC=10mAdc, VCE=1.0Vdc IC=50mAdc, VCE=1.0Vdc IC=100mAdc, VCE=1.0Vdc IC=10mAdc, IB=1.0 mAdc IC=50mAdc, IB=5.0mAdc IC=10mAdc, IB=1.0mAdc IC=50mAdc, IB=5.0mAdc Ic=10mAdc, VCE=20Vdc, f=100MHz VCB=5.0Vdc,IE=0, f=1.0MHz VEB=0.5Vdc,IC=0, f=1.0MHz VCE=10Vdc, IC=1.0mAdc, f=1.0KHz VCE=10Vdc, IC=1.0mAdc, f=1.0KHz VCE=10Vdc, IC=1.0mAdc, f=1.0KHz VCE=10Vdc, IC=1.0mAdc, f=1.0KHz VCE=5.0Vdc, IC=100Adc, f=1.0KHz hFE Base-Emitter Saturation Voltage - FHS3904 NF 40 -- -- 70 -- -- 100 -- 300 60 -- -- 30 -- -- -- -- 0.2 -- -- 0.3 0.65 -- 0.85 -- Vdc Vdc -- 0.95 300 -- -- MHz -- -- 4.0 pF -- -- 8.0 pF 1.0 -- 10 k 0.5 -- 8.0 x10-4 100 -- 400 1.0 -- 40 mhos -- -- 5.0 dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1. td tr ts tf VCC=3.0Vdc,VBE=-0.5Vdc, IC=10mAdc,IB1=1.0mAdc VCC=3.0Vdc,IC=10mAdc, IB1=IB2=1.0mAdc FR-5=1.0x0.75x0.062in. 2. Alumina=0.4x0.3x0.024in, 99.5%alumina. 3. Pulse Width300S;Duty Cycle2.0. 2 -- -- -- -- -- -- -- -- 35 35 200 50 nS nS