DMG1013T P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS NEW PRODUCT -20V Features and Benefits * * * * * * * * * ID RDS(on) TA = 25C 700m @ VGS = -4.5V -460mA 900m @ VGS = -2.5V -420mA 1300m @ VGS = -1.8V -350mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 3kV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * * * * DC-DC Converters Load switch Power management functions Case: SOT523 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (approximate) * * * * Drain SOT523 D Gate Gate Protection Diode Top View ESD PROTECTED TO 3kV S G Source Top View Equivalent Circuit Ordering Information (Note 3) Part Number DMG1013T-7 Notes: Case SOT523 Packaging 3000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information PA1 Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 DMG1013T Document number: DS31784 Rev. 5 - 2 2011 Y Mar 3 Apr 4 PA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) YM 2012 Z May 5 2013 A Jun 6 1 of 6 www.diodes.com 2014 B Jul 7 Aug 8 2015 C Sep 9 2015 C Oct O 2015 C Nov N Dec D March 2012 (c) Diodes Incorporated DMG1013T Maximum Ratings @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 4) Steady State TA = 25C TA = 85C NEW PRODUCT Pulsed Drain Current (Note 5) Symbol VDSS VGSS Value -20 6 Units V V ID -0.46 -0.33 A IDM -6 A Value 0.27 461 -55 to +150 Units W C/W C Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 - - -100 2.0 V nA A VGS = 0V, ID = -250A VDS = -20V, VGS = 0V VGS = 4.5V, VDS = 0V VGS(th) -0.5 RDS (ON) - |Yfs| VSD - -1.0 0.7 0.9 1.3 -1.2 V Static Drain-Source On-Resistance 0.5 0.7 1.0 0.9 -0.8 VDS = VGS, ID = -250A VGS = -4.5V, ID = -350mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS = -10V, ID = -250mA VGS = 0V, IS = -150mA Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf - 59.76 12.07 6.36 580 104 125 5.1 8.1 28.4 20.7 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: S V pF pF pF pC pC pC ns ns ns ns Test Condition VDS = -16V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -250mA VDD = -10V, VGS = -4.5V, RL = 47, RG = 10, ID = -200mA 4. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in steady-state condition. 5. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10s. 6. Measured under pulsed conditions to minimize self-heating effect. Pulse width 300s; duty cycle 2% 7. For design aid only, not subject to production testing. DMG1013T Document number: DS31784 Rev. 5 - 2 2 of 6 www.diodes.com March 2012 (c) Diodes Incorporated DMG1013T 1.5 10 VGS = -8.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -4.5V VGS = -3.0V 0.9 VGS = -2.5V VGS = -2.0V 0.6 0.3 6 4 2 T A = 150C VGS = -1.5V T A = 125C VGS = -1.2V 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 1.6 1.4 1.2 1.0 VGS = -1.8V 0.8 VGS = -2.5V 0.6 VGS = -4.5V 0.4 0.2 0 0 0.3 0.6 0.9 1.2 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1 VGS = -4.5V 0.8 TA = 150C TA = 125C 0.6 T A = 85C TA = 25C 0.4 TA = -55C 0.2 0 1.2 1.5 1.0 VGS = -2.5V ID = -500mA VGS = -4.5V ID = -1.0A 1.1 0.9 3 1.0 1.7 1.3 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 0 1.5 RDSON, DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 TA = 85C T A = 25C TA = -55C 0 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT VDS = -5V 8 1.2 0.3 0.6 0.9 1.2 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.5 VGS = -2.5V ID = -500mA 0.8 0.6 VGS = -4.5V ID = -1.0A 0.4 0.2 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMG1013T Document number: DS31784 Rev. 5 - 2 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature March 2012 (c) Diodes Incorporated DMG1013T -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 10 1.2 ID = -1mA 0.8 ID = -250A 0.4 100 6 T A = 25C 4 2 -VGS, GATE-SOURCE VOLTAGE (V) Ciss Coss Crss 1 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 1.2 0.2 0.4 0.6 0.8 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics 1.0 5 4 3 2 1 0 0 0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 6 f = 1MHz 10 8 0 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature C, CAPACITANCE (pF) 20 0 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1.6 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 504C/W D = 0.02 0.01 D = 0.01 P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response DMG1013T Document number: DS31784 Rev. 5 - 2 4 of 6 www.diodes.com March 2012 (c) Diodes Incorporated DMG1013T Package Outline Dimensions A SOT523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0 8 All Dimensions in mm NEW PRODUCT B C G H K M N J L D Suggested Pad Layout Y Z C X DMG1013T Document number: DS31784 Rev. 5 - 2 Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 E 5 of 6 www.diodes.com March 2012 (c) Diodes Incorporated DMG1013T IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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