DMG1013T
Document number: DS31784 Rev. 5 - 2 1 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMG1013T
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) ID
TA = 25°C
-20V
700mΩ @ VGS = -4.5V -460mA
900mΩ @ VGS = -2.5V -420mA
1300m @ VGS = -1.8V -350mA
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Up To 3kV
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Load switch
• Power management functions
Mechanical Data
• Case: SOT523
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.002 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
DMG1013T-7 SOT523 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015 2015 2015
Code W X Y Z A B C C C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT523
Top View Equivalent Circuit To
p
View
GS
D
PA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
PA1 YM
Source
Gate
Protection
Diode
Gate
Drain
ESD PROTECTED TO 3kV
DMG1013T
Document number: DS31784 Rev. 5 - 2 2 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMG1013T
NEW PRODUCT
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS ±6 V
Drain Current (Note 4) Steady
State
TA = 25°C
TA = 85°C ID -0.46
-0.33 A
Pulsed Drain Current (Note 5) IDM -6 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) PD 0.27 W
Thermal Resistance, Junction to Ambient (Note 4) R
θ
JA 461 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -20 - - V
VGS = 0V, ID = -250A
Zero Gate Voltage Drain Current TJ = 25°C IDSS - - -100 nA
VDS = -20V, VGS = 0V
Gate-Source Leakage IGSS - - ±2.0
μA VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
-0.5 - -1.0 V
VDS = VGS, ID = -250A
Static Drain-Source On-Resistance RDS (ON) - 0.5 0.7
Ω VGS = -4.5V, ID = -350mA
0.7 0.9 VGS = -2.5V, ID = -300mA
1.0 1.3 VGS = -1.8V, ID = -150mA
Forward Transfer Admittance |Yfs| - 0.9 - S
VDS = -10V, ID = -250mA
Diode Forward Voltage VSD -0.8 -1.2 V VGS = 0V, IS = -150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss - 59.76 - pF VDS = -16V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss - 12.07 - pF
Reverse Transfer Capacitance Crss - 6.36 - pF
Total Gate Charge Q
g
- 580 - pC VGS = -4.5V, VDS = -10V,
ID = -250mA
Gate-Source Charge Q
g
s - 104 - pC
Gate-Drain Charge Q
g
d - 125 - pC
Turn-On Delay Time tD
(
on
)
- 5.1 - ns
VDD = -10V, VGS = -4.5V,
RL = 47, RG = 10,
ID = -200mA
Turn-On Rise Time t
r
- 8.1 - ns
Turn-Off Delay Time tD
(
off
)
- 28.4 - ns
Turn-Off Fall Time tf - 20.7 - ns
Notes: 4. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in
steady-state condition.
5. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10μs.
6. Measured under pulsed conditions to minimize sel f-hea ting effect. Pulse width ≤ 300μs; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.
DMG1013T
Document number: DS31784 Rev. 5 - 2 3 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMG1013T
NEW PRODUCT
0
0.3
0.6
0.9
1.2
1.5
012345
Fig. 1 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
-I , D
AI
E
(A)
D
V = -1.2V
GS
V = -1.5V
GS
V = -2.0V
GS
V = -2.5V
GS
V = -3.0V
GS
V = -4.5V
GS
V = -8.0V
GS
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristic
-V , GATE-SOURCE VOLT AGE (V)
GS
0
2
4
6
8
10
-I , D
AI
E
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -5V
DS
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 0.3 0.6 0.9 1.2 1.5
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
Ω
V = -2.5V
GS
V = -4.5V
GS
V = -1.8V
GS
0
0.2
0.4
0.6
0.8
1.0
0 0.3 0.6 0.9 1.2 1.5
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
Ω
-I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
0.5
0.7
0.9
1.1
1.3
1.5
1.
7
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALI ZED)
DSON
V = -4.5V
I = -1.0A
GS
D
V = -2.5V
I = -500mA
GS
D
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 6 On-Resistance V ariation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT T EMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE ( )
DSON
Ω
V = -4.5V
I = -1.0A
GS
D
V = -2.5V
I = -500mA
GS
D
DMG1013T
Document number: DS31784 Rev. 5 - 2 4 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMG1013T
NEW PRODUCT
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
0
0.4
0.8
1.2
1.6
-V ,
A
E
ES
LD V
L
A
E (V)
GS(TH)
I = -1mA
D
I = -250µA
D
0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLT AGE (V)
SD
0
2
4
6
8
10
-I , S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
T = 25°C
A
1
10
100
0 5 10 15 20
Fig. 9 Typical Total Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
,
A
A
I
A
E (p
)
C
iss
C
rss
C
oss
f = 1MHz
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1.0
Q , T OTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
g
-V ,
G
A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS
0.00001 0.001 0.01 0.1 1 10 100 1,000
Fig . 11 Transie nt Therm al Response
t , PULSE DURATION TIME (s)
1
0.0001
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 504°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
DMG1013T
Document number: DS31784 Rev. 5 - 2 5 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMG1013T
NEW PRODUCT
Package Outline Dimensions
Suggested Pad Layout
SOT523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ⎯ ⎯ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α 0° 8° ⎯
All Dimensions in mm
Dimensions Value (in mm)
Z 1.8
X 0.4
Y 0.51
C 1.3
E 0.7
XE
Y
C
Z
A
M
JL
D
BC
H
K
G
N
DMG1013T
Document number: DS31784 Rev. 5 - 2 6 of 6
www.diodes.com March 2012
© Diodes Incorporated
DMG1013T
NEW PRODUCT
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