2N2323--2N2329 Silicon Controlled Rectifier Rev. V4 Features * Available in JAN, JANTX, JANTXV per MIL-PRF19500/276 * TO-5 & TO-39 (TO-205AD) Package Electrical Characteristics Characteristics Symbol Min. Max. Units Subgroup 2 Testing Reverse Blocking Current R2 = 1 k R2 = 2 k VR = 50 Vdc VR = 100 Vdc VR = 200 Vdc VR = 300 Vdc VR = 400 Vdc 2N2323, S - 2N2329, S 2N2323A, AS - 2N2329A, AS 2N2323, S, A, AS 2N2324, S, A, AS 2N2326, S, A, AS 2N2328, S, A, AS 2N2329, S, A, AS IRBX1 -- 10 Adc Forward Blocking Current R2 = 1 k R2 = 2 k VR = 50 Vdc VR = 100 Vdc VR = 200 Vdc VR = 300 Vdc VR = 400 Vdc 2N2323, S - 2N2329, S 2N2323A, AS - 2N2329A, AS 2N2323, S, A, AS 2N2324, S, A, AS 2N2326, S, A, AS 2N2328, S, A, AS 2N2329, S, A, AS IFBX1 -- 10 Adc Ikg -- 200 Adc VGT1 IGT1 VGT1 IGT1 0.35 -- 0.35 -- 0.80 200 0.60 20 Vdc Adc Vdc Adc -- Vdc Reverse Gate Current (VKG = 6 Vdc) Gate Trigger Voltage & Current V2 = VFBX = 6 Vdc; RL = 100 W Re = 1 k 2N2323, S - 2N2329, S Re = 2 k 2N2323A, AS - 2N2329A, AS Subgroup 4 Testing dv/dt = 1.8 v/s, R3 = 1 k dv/dt = 0.7 v/ms, R3 = 2 kW VR = 50 Vdc V = 100 Vdc 50 RL 400 W, C = 0.1 to 1.0 F, R VR = 200 Vdc repetition rate = 60 pps, VR = 300 Vdc test duration = 15 seconds VR = 400 Vdc Exponential Rate of Voltage Rise TA = 125C 2N2323, S - 2N2329, S 2N2323A, AS - 2N2329A, AS 2N2323, S, A, AS 2N2324, S, A, AS 2N2326, S, A, AS 2N2328, S, A, AS 2N2329, S, A, AS Forward "on" Voltage IFM = 4a (pk) (pulse), pulse width = 8.5 ms, max; duty cycle = 2% max. VFBX 47 95 190 285 380 VFM -- 2.2 V(pk) IHOX -- 2 mAdc Holding Current VAA = 24 Vdc max., IF1 = 100 mAdc, R3 = 1 k IF2 = 10 mAdc R3 = 2 k Gate trigger source voltage = 6 Vdc, trigger pulse width = 25 s min. R2 = 330 2N2323, S - 2N2329, S 2N2323A, AS - 2N2329A, AS 1 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: www.vptcomponents.com 2N2323--2N2329 Silicon Controlled Rectifier Rev. V4 Absolute Maximum Ratings Ratings Symbol 2N2323, S/ 2N2323A, S 2N2324, S/ 2N2324A, S 2N2326, S/ 2N2326A, S 2N2328, S/ 2N2328A, S 2N2329, S/ 2N2329A, S Unit Reverse Voltage VRM 50 100 200 300 400 Vdc Working Peak Reverse Voltage VRM 75 150 300 400 500 Vpk Forward Blocking Voltage VFBXM 503,4 1003,4 2003,4 3003,4 4003,4 Vpk Average Forward Current1 IO 0.22 Adc Forward Current Surge Peak2 IFSM 15 Adc Cathode-Gate Current VKGM 6 Vpk Operating Temperature TOP -65 to +125 C Storage Junction Temperature TSTG -65 to +150 C 1. This average forward current is for an ambient temperature of 80C and 180 electrical degrees of conduction. 2. Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during the first 5 s after switching from the `off' (blocking) to the `on' (conducting) state. This is measured from the point where the thyristor voltage has decayed to 90% of its initial blocking value. 3. Gate connected to cathode through 1,000 ohm resistor. 4. Gate connected to cathode through 2,000 ohm resistor. 2 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: www.vptcomponents.com 2N2323--2N2329 Silicon Controlled Rectifier Rev. V4 Outline Drawing (TO-5 & TO-39) Dimensions LTR Inches Millimeters Note MIN MAX MIN MAX CD 0.305 0.335 7.75 8.51 -- CH 0.240 0.260 6.10 6.60 -- HD 0.335 0.370 8.51 9.40 -- LC LD 0.200 TP 0.016 5.08 TP 0.021 0.041 7 0.053 LL 8, 9 8,11,14 LU 0.016 0.019 0.041 0.048 8, 9 L1 -- 0.050 -- 1.27 8, 9 L2 0.250 -- 6.35 -- 8, 9 P 0.100 -- 2.54 -- 7 Q -- 0.050 -- 1.27 5 TL 0.029 0.045 0.74 1.14 -- TW 0.028 0.034 0.71 0.86 -- r -- 0.010 -- 0.25 10 45 TP 45 TP 7 1, 2, 10, 12, 13, 14 1. 2. 3. 4. 5. 6. 7. Dimensions are in inches. Millimeters are given for general information only. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. CD shall not vary more than 0.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane 0.054 +0.001 -0.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within 0.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by gauging procedure. 8. Dimension LU applies between L, and L,. Dimension LD applies between L, and LL minimum. Diameter is uncontrolled in and beyond LL minimum. 9. All three leads. 10. The collector shall be internally connected to the case. 11. Dimension r (radius) applies to both inside corners of tab. 12. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 13. Lead 1 = cathode, lead 2 = gate, lead 3 = anode. The anode shall be internally connected to the case. 14. For non-S-suffix devices (T0-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-suffix types (T0-39), dimension LL = 0.5 inch (12.70 mm) min. and 750 inch (19.05 mm) max. 3 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: www.vptcomponents.com 2N2323--2N2329 Silicon Controlled Rectifier Rev. V4 VPT Components All rights reserved. Information in this document is provided in connection with VPT Components' products. These materials are provided by VPT Components as a service to its customers and may be used for informational purposes only. 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