MOSPOWER Selector Guide *200C Rating MOSPOWER Selector Guide = Sse" N-Channel MOSPOWER Breakdown Ip Power Device Voltage (Bolon Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 500 0.4 13.0 150 IRF450 500 0.5 12.0 150 IRF452 500 0.85 8.0 125 IRF440 500 1.10 7.0 125 IRF442 500 1.5 6.5 175 VNPO002A* 500 1.5 45 100 VN5001A 500 1.5 45 75 IRF430 500 2.0 4.0 100 VN5002A 500 2.0 4.0 75 IRF432 500 3.0 2.5 40 {RF420 500 4.0 2.0 40 IRF422 450 0.4 13.0 150 IRF461 450 0.5 12.0 150 IRF453 450 0.85 8.0 125 IRF441 450 1.10 7.0 125 IRF443 450 1.5 6.5 175 VNNOO2A* 450 1.5 45 100 VN4501A 450 1.5 45 75 IRF431 450 2.0 40 100 VN4502A 450 2.0 4.0 75 IRF433 450 3.0 2.5 40 IRF421 450 4.0 2.0 40 IRF423 400 0.3 15.0 150 IRF350 400 0.4 13.0 150 IRF352 400 0.55 10.0 125 (RF340 400 0.80 8.0 125 IRF342 400 1.0 8.0 175 VNMO01A* 400 1.0 6.0 125 VN4000A 400 1.0 5.5 76 IRF330 400 1.5 5.0 125 VN4001A 400 1.5 45 75 IRF332 e 400 1.8 3.0 40 IRF320 400 2.5 2.5 40 IRF322 eS 350 0.3 15.0 150 IRF351 350 0.4 13.0 150 IRF353 350 0.55 10.0 125 (RF341 TO-3 350 0.80 8.0 125 IRF343 350 1.0 8.0 175 VNLOO01A* 350 1.0 6.0 125 VN3500A 350 1.0 5.5 75 IRF331 350 1.5 5.0 125 VN3501A 350 1.5 45 75 IRF333 350 1.8 3.0 40 IRF321 350 2.5 2.5 40 IRF323 200 0.085 30.0 150 IRF250 200 0.12 25.0 150 IRF252 200 0.18 18.0 125 IRF240 200 0.22 16.0 125 IRF242 200 0.4 9.0 75 {RF230 200 0.6 8.0 75 IRF232 200 0.8 5.0 40 IRF220 200 1.2 4.0 40 IRF222 150 0.085 30.0 150 IRF251 150 0.12 25.0 150 IRF253 150 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 IRF231 150 0.6 8.0 75 IRF233 150 0.8 5.0 40 IRF221 150 1.2 4.0 40 IRF223 120 0.18 14.0 75 VN1200A 120 0.25 12.0 100 VN1201A 1-4 Siliconix IRF420 = IRF424 IRF422 = IRF423 Ss IRF820 = IRF824 = IRF822 IRF823 Siliconix Advanced Information 5OOV) -Channel Enhancement Mode These power FETs are designed especially for off-line switching regulators, converters, solenoid and relay drivers. Product Summary FEATURES Neate er BVoss | Rosion) Ip Package ws High Voltage IRF420 S00V , 32 2.54 No Second Breakdown IRF421 450V 103 a High Input Impedance IRF422 500V 40 20A g Internal Drain-Source Diode IRF423 450V _w Very Rugged: Excellent SOA iRFB20 500V 30 3 6A as Extremely Fast Switching IRF821 | 450V " T0.220A8 IRF822 500V f _ BENEFITS . TAFezS TOV 40 2.0A u Reduced Component Count a Improved Performance o a Simpler Designs te eps G a Improved Reliability at s ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage Drain Current IRF420, 422 0... cece eee c cece cece eee n ene nee eee e eee ee 500V Pulsed (80s to 300us, 1% duty cycle)-......eeeeeeeeee +10A IRF820, 822 IRF421, 423 oeeceeeeccecceeceueeeceucesenseesenecaes A50V Gate Current (Peak) oo... c cece cece cere cece tener eens t1A IRF821, 823 Gate-Source Voltage -+-1--s rere eee eer erene tere ereeerenes + 40V Drain-Gate Voltage Total Power Dissipation ........00cciccceeasceseeesesenenens 40W IRFA20, 422 vee b eee e ee ne ene senate nae seneeennenene 500V Linger Derating Factor .s+esse+letesesesete 0.32 W/C VRF421, 423 i ccc cece cence tere ete e een ee tes 450V Operating and Storage IRF821, 823 Temperature oo... . seer eee teeters -55C to + 150C - Drain Current Continuous IRF420, 421.0. e ee cee een teen teens +2.5A IRF422, 423.000... ec eect e reece cnet tte e ones +2.0A PACKAGE DIMENSIONS 875 0.450 . (77.43) 20 (0.51) 23 p22 225) ~ (6.35) BSS (1.39) = oe 208 S35 x $ TWrvne ne TT 0.043 (7.092) SEATING aT e036 rege) | ane be - 890 1279 PLANE 7 Dae pales 4.09) a er) 0.675. 7. 145) [a7 (29.896) or ee (6.355 0.655 (16.637) 1 EN hs 4 m8 oaao (71.176) Ln {2 \ We tan | (+ 4 0420 (70.668) Ye N 1 a | 1 | t ~~] / 0.161 (4.089) : O45 (1.15) 0226 rs715h O181 (3.835) Ge (0:207) aoscom view 13385) MAX a | PIN 1 Gate TO-3 PIN 1 Gate TO-220AB PIN 2 Source PIN 2 & TAB Drain CASE Drain PIN 3 Source 2-26 Siliconix ELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted) Part : Parameter Number Min Typ Max Unit Test Conditions Static IRF 420, 820 500 Drain-Source Breakdown tRF422, 822 . BV, : - 4 Veg = 0,-Ip = 250 DSS Voltage IRF421, 821 | 400 Vv es D pA IRF 423, 823 Vast) Gate Threshold Voltage All 2.0 3.3 4.0 Vv Vos = Ves; p= 1 mA \ess Gate-Body Leakage All 10 +100 nA Veg = + 20V, Vos =0 Zero Gate Voltage Drain : / 0.4 0.25 Vpg = 0.8 Rated Vig Vag = 0 loss Current All mA _ g oe u 0.2 1.0 Vpg = Rated Vos, Vag = 0, Ty = 125C Ipjon) +: ON-State Drain Current All 2.5 A Vps = 25V, Vgs = 10V (Note 1) IRF 420, 820 25 3.0 Static Drain-Source On-State IRF 421, 821 . . : . Toston) Resistance TAF4D2, 822 2 | Vag = 10V, Ip = 1A (Note 1) IRF423, 823 3.0 | 40 : Dynamic Dts Forward Transconductance All 1.0 1.75 S |'Vpg = 25V, Ip = 1A (Note 1) Ciss Input Capacitance 300 400 Coss Output Capacitance All | 75 150 pF Ves = 0, Vog = 25V, f= 1 MHz Ciss Reverse Transfer Capacitance 20 40 taon) Turn-On Delay Time All 30 60 t, Rise Time All 25 50 Vop= 250V, Ip *1A, R, = 2400, R, = 50Q, ns 9 taoty Turn-Off Delay Time All 30 60 Veg = 10V (Fig. 1) tr Fall Time . All. 15 | 30 . . ' Drain-Source Diode Characteristics Vep Forward On Voltage Alt -1.0 v ls =-2.5A Veg = 0 (Note 1) ter Reverse Recovery Time All 200 ns |lp=2.5A, Veg =0, di/dt = 100A/us (Fig. 2) Note 1: Pulse test 80 xs to 300 us, 1% duty cycle FIGURE 1 Switching Test Circuit FIGURE 2 JEDEC Reverse Recovery Circult y WV DD 50Q di/dt Adjust (1-27 UH) : | . = STO 50uF I / , | IN4933 # _ (pKyAdjust , Rgen | wt L l ~ Lie | | | | yeton IN4001 20v + | 1 | T | 4000UF = 2 >i | J | I j | CIRCUIT = | R< 0.252 PULSE UNDER - L $0.01uH [generator] [TEST a = PW. = Tus Cg < 50 pF +4 > id AA DUTY CYCLE = 1% | A IN4723 2N4204 SCOPE 3 FROM TRIGGER CKT Siliconix 2-27 ceddl = 72esal = b7Ssal = OSI cysdl = Ccovsdl = bovsdl = Odsal