TIP122 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R204-016.B
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 100 V
Collector to Emitter Voltage VCEO 100 V
Emitter to Base Voltage VEBO 5 V
IC Collector Current IC 5 A
TO-220 65 W
Power Dissipation (TC=25℃) TO-126 PD 40 W
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage BVCEO I
C=100mA 100 V
Collector-Emitter Saturation Voltage VCE(SAT)1 I
C=3A, IB=12mA 2 V
Collector-Emitter Saturation Voltage VCE(SAT)2 I
C=5A, IB=20mA 4 V
Base-Emitter Saturation Voltage VBE(ON) V
CE=3V, IC=3A 2.5 V
Collector Cut-Off Current ICBO V
CB=100V 200 uA
Collector-Cut-Off Current ICEO V
CE=50V 500 uA
Emitter Cut-Off Current IEBO V
EB=5V 2 mA
DC Current Gain hFE IC=500mA, VCE=3V
IC=3A, VCE=3V 1000
1000