Symbol
VDS
VGS
IDM
TJ, TSTG
Paramete
r
Symbol Typ Max
t ≤ 10s 31 40
Steady State 59 75
Steady State RθJL 16 24
2.0
-160
A
3.1
°C/W
RθJA
°C-55 to 150
Absolute Maximum Ratings TJ=25°C unless otherwise noted
PD
Maximum Junction-to-Lead °C/W
Units
Maximum Junction-to-Ambient
A
°C/W
Maximum Junction-to-Ambient
A
D
W
UnitsParameter
TA=25°C
TA=70°C
V
V
ID
Gate-Source Voltage
Drain-Source Voltage -30
Power Dissipation BTA=25°C
Junction and Storage Temperature Range
TA=70°C
Pulsed Drain Current C
Continuous Drain
Current
Maximum
-17
-13
±20
AO4447AL
P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -30V
ID = -17A (VGS = -10V)
RDS(ON) < 7mΩ (VGS = -10V)
RDS(ON) < 8mΩ (VGS = -4.5V)
RDS(ON) < 9mΩ (VGS = -4V)
ESD Protected!
General Description
The AO4447AL uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.This
device is ideal for load switch and battery protection
applications.
-RoHS Compliant
-Halogen Free
SOIC-8
G
S
D
G
D
S
Rg
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4447AL
Symbol Min Typ Max Units
BVDSS -30 V
-1
TJ = 55°C -5
IGSS ±10
µ
A
VGS(th) -0.8 -1.3 -1.6 V
ID(ON) -160 A
5.5 7
TJ=125°C 7 8.5
6.5 8
6.9 9
gFS 70 S
VSD -0.62 -1 V
IS-3 A
Ciss 4580 5500 pF
Coss 755 pF
Crss 564 pF
Rg160 210 Ω
Qg (-10V) 87 105 nC
Qg (-4.5V) 41 nC
Qgs 12.8 nC
Qgd 17 nC
tD(on) 180 ns
tr260 ns
tD(off) 1.2
µ
s
tf9.7
µ
s
trr 32 40 ns
Qrr 77 nC
#REF!
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
RDS(ON)
VGS=0V, VDS=0V, f=1MHz
VGS=0V, VDS=-15V, f=1MHz
Input Capacitance
mΩ
VGS =-4V, ID =-13A
Static Drain-Source On-Resistance
µA
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-17A
Output Capacitance
IS =-1A,VGS = 0V
VDS =-5V, ID =-17AForward Transconductance
Gate resistance
SWITCHING PARAMETERS
DYNAMIC PARAMETERS
IDSS
Drain-Source Breakdown Voltage
Turn-Off DelayTime
VGS=-10V, VDS=-15V
RL=-0.9Ω, RGEN=3Ω
Turn-Off Fall Time
Turn-On DelayTime
Turn-On Rise Time
Gate Source Charge
Gate Drain Charge
Maximum Body-Diode Continuous Current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-17A, dI/dt=300A/µs
VGS =-10V, ID =-17A
Reverse Transfer Capacitance
IF=-17A, dI/dt=300A/µs
Diode Forward Voltage
VGS =-4.5V, ID =-15A
Total Gate Charge
On state drain current
ID =-250µA, VGS = 0V
VGS =-10V, VDS =-5V
VDS =-30V, VGS = 0V
VDS = 0V, VGS =±16V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage VDS =VGS ID =-250µA
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 0: Aug 2008
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4447AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
IF=-6.5A, dI/dt=100A/µs
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
G
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
20
40
60
80
100
120
140
160
012345
-VDS (Volts)
Figure 1: On-Region Characteristics(Note E)
-ID (A)
-3.5V
-4V-10V
-3V
-4.5V
0
20
40
60
80
100
01234
-VGS(Volts)
Figure 2: Transfer Characteristics(Note E)
-ID(A)
25°C
125°C
VDS=-5V
2
4
6
8
10
0 5 10 15 20 25 30
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage(Note E)
RDS(ON) (mΩ)
VGS=-10V
VGS=-4.5V
VGS=-4V
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
0.0 0.2 0.4 0.6 0.8 1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics(Note E)
IS (A)
25°C
125°C
0.8
1.0
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature(Note E)
Normalized On-Resistance
0
4
8
12
16
20
246810
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source
Voltage(Note E)
RDS(ON) (mΩ)
ID= -17A
25°C
125°C
VGS= -2.5V
VGS= -10V
ID= -17A
VGS= -4.5V
ID= -15A
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4447AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
IF=-6.5A, dI/dt=100A/µs
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
G
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
2
4
6
8
10
0 20406080100
Qg (nC)
Figure 7: Gate-Charge Characteristics
-VGS (Volts)
0
1000
2000
3000
4000
5000
6000
7000
0 5 10 15 20 25 30
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
C
Crss
0
10
20
30
40
0.001 0.1 10 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Power (W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
ZθJA Normalized Transient
Thermal Resistance
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
-VDS (Volts)
-ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
1
0
m
s
1ms
100ms
10s
10
µ
s
DC
VDS=-15V
ID= -17A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
T
o
nT
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4447AL
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
trr
-Isd
-Vds
F
-I
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
tt
t
tt
t
90%
10%
r
on
d(off) f
off
d(on)
Alpha & Omega Semiconductor, Ltd. www.aosmd.com