To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. 2SK2114 Silicon N Channel MOS FET REJ03G0998-0200 (Previous: ADE-208-1346) Rev.2.00 Sep 07, 2005 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220C*FM) D 1. Gate 2. Drain 3. Source G 12 Rev.2.00 Sep 07, 2005 page 1 of 6 3 S 2SK2114 Absolute Maximum Ratings (Ta = 25C) Item Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Ratings 450 30 5 20 5 35 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min 450 30 Typ -- -- Max -- -- Unit V V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage IGSS IDSS VGS(off) Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage RDS(on) -- -- 2.0 -- -- -- -- 1.0 10 250 3.0 1.4 A A V VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2.5 A, VGS = 10 V*3 2.5 -- -- -- -- -- -- -- -- -- 4.0 640 160 20 10 25 50 30 0.95 300 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns ID = 2.5 A, VDS = 10 V*3 Body to drain diode reverse recovery time Note: 3. Pulse Test Rev.2.00 Sep 07, 2005 page 2 of 6 |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr VDS = 10 V, VGS = 0, f = 1 MHz ID = 2.5 A, VGS = 10 V, RL = 12 IF = 5 A, VGS = 0 IF = 5 A, VGS = 0, diF / dt = 100 A / s 2SK2114 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 50 Drain Current ID (A) 20 0 1 5 100 s 2 1 0.5 Operation in this Area is Limited by RDS (on) 0.2 Ta = 25C 0.05 150 1 3 10 30 100 300 1,000 Case Temperature TC (C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 V 10 Pulse Test 6V 5.5 V 8 Drain Current ID (A) 10 50 m s 0.1 0 Drain Current ID (A) 10 s 40 10 10 20 ) ) ot C Sh 25 (1 C= s m n (T 10 tio = ra e PW Op C D Channel Dissipation Pch (W) 60 6 5.0 V 4 4.5 V 2 -25C TC = 25C VDS = 20 V Pulse Test 8 75C 6 4 2 VGS = 4 V 10 20 30 40 50 2 6 4 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 8 5A 6 4 2A 2 ID = 1 A 0 0 4 8 12 16 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 6 20 Static Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage VDS (on) (V) 0 10 Pulse Test 5 VGS = 10 V 15 V 2 1.0 0.5 0.2 0.1 0.5 1.0 2 5 10 20 Drain Current ID (A) 50 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) () 2SK2114 5 VGS = 10 V Pulse Test 4 3 ID = 5 A 2 1A 1 0 -40 0 40 80 2A 120 160 2 1.0 0.5 0.2 0.1 0.05 0.2 0.1 0.5 Typical Capacitance vs. Drain to Source Voltage 1,000 di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test Capacitance C (pF) Ciss 500 200 VGS = 0 f = 1 MHz 100 Coss 10 Crss 100 1 0.5 0.2 2 1.0 5 10 0 30 50 40 Dynamic Input Characteristics Switching Characteristics VDS 16 400 V 12 300 VGS 200 8 ID = 5 A VDD = 400 V 250 V 100 V 100 4 0 8 16 24 32 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 6 500 20 VDD = 100 V 250 V 0 20 Drain to Source Voltage VDS (V) 500 400 10 Reverse Drain Current IDR (A) 40 Gate to Source Voltage VGS (V) 50 0.1 5 2 1.0 Body to Drain Diode Reverse Recovery Time * VGS = 10 V VDD = 30 V PW = 2 s, duty < 1% * Switching Time t (ns) Reverse Recovery Time trr (ns) 5 Drain Current ID (A) 1,000 Drain to Source Voltage VDS (V) -25C TC = 25C 75C VDS = 20 V Pulse Test Case Temperature TC (C) 5,000 2,000 10 200 100 td (off) 50 tf 20 tr td (on) 10 5 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 10 2SK2114 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 Pulse Test 8 6 4 5, 10 V 2 VGS = 0, -10 V 0.8 0.4 0 1.2 2.0 1.6 Normalized Transient Thermal Impedance S (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C D=1 1.0 0.5 0.3 0.2 ch-c (t) = S (t) * ch-c ch-c = 3.57C/W, TC = 25C 0.1 0.1 0.05 PDM 0.02 0.01 ulse P hot 1S 0.03 0.01 10 T 100 1m 10 m 100 m D = PW T PW 1 10 Pulse Width PW (s) Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor Vin D.U.T 10 % RL Vout 50 Vin = 10 V Rev.2.00 Sep 07, 2005 page 5 of 6 . VDD =. 30 V td(on) 10 % 90 % tr 10 % 90 % td(off) tf 2SK2114 Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0003AE-A TO-220CFM / TO-220CFMV 1.9g 0.6 0.1 2.54 4.1 0.3 1.0 0.2 1.15 0.2 3.2 0.2 12.0 0.3 10.0 0.3 2.54 Unit: mm 4.5 0.3 2.7 0.2 15.0 0.3 2.5 0.2 13.6 1.0 JEITA Package Code 0.7 0.1 Ordering Information Part Name 2SK2096-E Quantity 30 pcs Shipping Container Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. 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