Si SGS -THOMSON MICROELECTRONICS BTA08 B/C BTBO8 B/C STANDARD TRIACS FEATURES a HIGH SURGE CURRENT CAPABILITY a COMMUTATION : (dV/dt)c > 5 V/us a BTA Family : INSULATING VOLTAGE = 2500VAms) 8 (UL RECOGNIZED : E81734) hs DESCRIPTION The BTA/BTBO8 B/C triac family are high perfor- mance glass passivated PNPN devices. Ay As These parts are suitables for general purpose ap- G plications where high surge current capability is re- TO 220 AB quired. Application such as phase control and (Plastic) static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current BTA Te = 75C 8 A (360 conduction angle) BTB Te = 80C ITSM Non repetitive surge peak on-state current tp = 8.3 ms 84 A ( Tj initial = 25C ) tp = 10 ms 80 it [2t value tp = 10 ms 32 As di/dt Critical rate of rise of on-state current Repetitive 10 Alus Gate supply : IG = 500mA_ dig/dt = 1A/us F = 50 Hz Non 50 Repetitive Tstg Storage and operating junction temperature range - 40 to + 150 c Tj - 40 to +125 c Tl Maximum lead temperature for soldering during 10s at 4.5 mm 230 C from case Symbol Parameter BTA / BTBO8.-... B/C Unit 400 600 700 800 VDRM Repetitive peak off-state voltage 400 600 700 800 v VRRM Tj = 125 C July 1991 V5 301 BTAOS B/C / BTBOS B/C THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a) Junction to ambient 60 CiwW Rth (j-c) DC | Junction to case for DC BTA 4.4 SCAN BTB 3.2 Rth (j-c) AC | Junction to case for 360 conduction angle BTA 3.3 C/W ( F= 50 Hz) BTB 2.4 GATE CHARACTERISTICS (maximum values) PG (aAv)=1W PGM= 40W (tp =20 us) IGMm=4A(tp=20us) VGMm = 16V (tp = 20 ps). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suffix Unit B Cc IGT Vp=12V (OC) RL=330 Tj=25C I-It-ttl MAX | 50 25 mA IV MAX 100 50 VGT Vp=12V (DC) RL=33Q Tj=25C [-II-HH-IV MAX 1.5 v VGaD Vp=VORM AL=3.3kQ Tj=110C {-II-HI-IV MIN 0.2 v tgt Vp=VoRM Ig = 500mA Tj=25C LI-ieiv. | TYP 2 ps dig/dt = 3A/us IL Ig=t.2 lat Tj=25C I-lHL-IV TYP | 40 20 mA Ul 70 35 IH * IT= 500mA gate open Tj=25C MAX 50 25 mA VIM * ITM= 11A_ tp= 380ps Tj=25C MAX 1.75 v IDRM Vorm Rated Tj=25C MAX 0.01 mA (RAM VRRM Fated Tj=110C MAX 0.5 dV/dt * | Linear slope up to Vp=67%VDRM Tj=110C MIN 250 100 Vius gate open (dV/dt}c * | (di/dt)c = 3.5A/ms Tj=110C MIN 10 5 V/us * For either polarity of electrode Az voltage with reference to electrode Ay. 2/5 302 k SGS-THOMSON JA icRoELEcrReMes BTAO8 B/C / BTBO8 B/C ORDERING INFORMATION Package / Vv BTA 400 (Insulated) 600 700 800 BTB 400 (Uninsulated) 600 700 800 Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50H7z). (Curves are cut off by (di/di)c limitation) P (WwW) 12 , 180 | 10 ae - O= 180 8 Ql 120 I 6 | Qs 90. sg T | Ol+ 60 41 Ges 30 F7 i _|Le 1 (A) T(RMS) o 1 2 3 4 5 6 7 8 Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). P (W) Tease (C) 12 Rth=__o* cow 1 "Cow 5 C/w |+80 8 7.5 C/w 6 90 4 100 Tamb (C) 110 20 40 60 80 100 120 140 i SGS-THOMSON JF nicROELECTROWICS xX [KX |x ix Tx Tx ]O B Xx xX Xx x xX x xX X Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). P (Ww) Tease (C) 12 Rth=_o c/w 1 2.5C/w 5 c/w |F80 8 7.5C/wW 6 90 4 100 Tamb (C) Oo 0 20 40 60 110 80 100 120 140 Fig.4 : RMS on-state current versus case temperature. \T(RMs) fA) BTB BTA Ql = 180 \ Tease("C) 4 1 1 Oo 0 10 20 30 40 50 60 70 80 90 100110120 3/5 303 BTA08 B/C / BTBO8 B/C Fig.5 : Thermal transient impedance junction to case Fig.4 : Relative variation of gate trigger current and and junction to ambient versus pulse duration. holding current versus junction temperature. (2th j-c : BTA version only) Zth ( C/W) lgtl Tj) _nITjl : IgtlTj#25C In[Tje25 C 1.0E+02 = 2.5 2 1.0E+01 lot 15 i 9 md 1.0E+00 1 th ST | | PTS +__| 0.5 t Tj (C) 1.0E-01 0 i #DE-03 10E-02 10E-01 106-00 106+01 1.0E*02 1.0&+09 -40-30-20-10 0 10 20 30 40 50 60 70 60 90 100110 Fig.7 : Non Repetitive surge peak on-state current Fig.8 : Non repetitive surge peak on-state current for a versus number of cycles. sinusoidal pulse with width : t < 10ms, and corresponding value of [2t. ItgulA) ITg(A). It (A*s) $00 Tj initial = 25C Tj initial = 25C 'T3m 100 Number of cycles 1 10 100 41000 Fig.9 : On-state characteristics (maximum values). traf) 100 Tj initial 26C Tj max Vto = 10V Rt 0.0650 Vim (V) 1 2 3 4 6 6 7 4/8 i SGS-THOMSON VL isicnoelecrnomes 304 BTA08 B/C / BTBOS8 B/C PACKAGE MECHANICAL DATA (in millimeters) TO 220 AB Plastic ee lo 88 |B9 1o.gto1 Salex 4.85 0.17 +) 1 , . co" eo] 4.25 - 9: uy Gy 12.7 min 14.7 max 2.429. Cooling method : by conduction (method C) Marking : type number Weight : 2g Polarity: NA 5/5 k SGS-THOMSON YZ. incrosuscrnomes 305