PD - 95462 IRF7389PbF HEXFET(R) Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Top View Description N-Ch P-Ch 30V -30V VDSS RDS(on) 0.029 0.058 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage TA = 25C TA = 70C Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range V DS V GS ID IDM IS Maximum P-Channel N-Channel 30 7.3 5.9 30 2.5 -5.3 -4.2 -30 -2.5 2.5 1.6 PD EAS IAR EAR dv/dt TJ, TSTG -30 20 82 4.0 Units V A W 140 -2.8 0.20 mJ A mJ V/ ns 3.8 -2.2 -55 to + 150 C Symbol Limit Units RJA 50 C/W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient www.irf.com 1 6/29/04 IRF7389PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance V GS(th) Gate Threshold Voltage gfs Forward Transconductance I DSS Drain-to-Source Leakage Current I GSS Gate-to-Source Forward Leakage Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min. 30 -30 1.0 -1.0 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Typ. Max. 0.022 0.022 0.023 0.029 0.032 0.046 0.042 0.058 0.076 0.098 14 7.7 1.0 -1.0 25 -25 100 22 33 23 34 2.6 3.9 3.8 5.7 6.4 9.6 5.9 8.9 8.1 12 13 19 8.9 13 13 20 26 39 34 51 17 26 32 48 650 710 320 380 130 180 Units V V/C V S A nA nC ns pF Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.7A VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.6A VDS = VGS, I D = 250A VDS = VGS, I D = -250A VDS = 15V, I D = 5.8A VDS = -15V, I D = -4.9A VDS = 24V, V GS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, T J = 55C VDS = -24V, V GS = 0V, TJ = 55C VGS = 20V N-Channel I D = 5.8A, VDS = 15V, VGS = 10V P-Channel I D = -4.9A, V DS = -15V, VGS = -10V N-Channel VDD = 15V, ID = 1.0A, RG = 6.0, RD = 15 P-Channel VDD = -15V, ID = -1.0A, RG = 6.0, RD = 15 N-Channel V GS = 0V, V DS = 25V, = 1.0MHz P-Channel V GS = 0V, V DS = -25V, = 1.0MHz Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions 2.5 -2.5 A 30 -30 0.78 1.0 TJ = 25C, IS = 1.7A, VGS = 0V V -0.78 -1.0 TJ = 25C, IS = -1.7A, VGS = 0V 45 68 N-Channel ns 44 66 TJ = 25C, I F =1.7A, di/dt = 100A/s 58 87 P-Channel nC TJ = 25C, I F = -1.7A, di/dt = 100A/s 42 63 Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 22 ) Surface mounted on FR-4 board, t 10sec. N-Channel ISD 4.0A, di/dt 74A/s, VDD V(BR)DSS, TJ 150C P-Channel I SD -2.8A, di/dt 150A/s, VDD V(BR)DSS, TJ 150C N-Channel Starting TJ = 25C, L = 10mH RG = 25, IAS = 4.0A. (See Figure 12) P-Channel Starting TJ = 25C, L = 35mH RG = 25, IAS = -2.8A. 2 www.irf.com IRF7389PbF N-Channel 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 20s PULSE WIDTH TJ = 25C A 1 0.1 1 10 3.0V 20s PULSE WIDTH TJ = 150C A 1 10 0.1 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 Fig 2. Typical Output Characteristics 100 ISD , Reverse Drain Current (A) 100 I D , Drain-to-Source Current (A) 1 VDS, Drain-to-Source Voltage (V) TJ = 25C TJ = 150C 10 VDS = 10V 20s PULSE WIDTH 1 3.0 3.5 4.0 4.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com A 5.0 TJ = 150C 10 TJ = 25C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 A 1.6 VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 IRF7389PbF RDS (on) , Drain-to-Source On Resistance () RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 N-Channel ID = 5.8A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 0.040 0.032 0.028 0.024 0 0.08 0.06 I D = 5.8A 0.04 0.02 0.00 12 V GS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 4 15 A E AS , Single Pulse Avalanche Energy (mJ) RDS (on) , Drain-to-Source On Resistance () 0.10 9 20 30 40 A Fig 6. Typical On-Resistance Vs. Drain Current 0.12 6 10 I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature 3 V GS = 10V 0.020 TJ , Junction Temperature ( C) 0 V GS = 4.5V 0.036 200 TOP BOTTOM 160 ID D 1.8A 3.2A 4.0A 120 80 40 0 25 50 75 100 125 A 150 Starting T J , Junction Temperature (C) Fig 8. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7389PbF N-Channel 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 900 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 1200 Ciss Coss 600 Crss 300 0 1 10 100 A ID = 5.8A VDS = 15V 16 12 8 4 0 0 10 20 30 40 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 PDM 0.02 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7389PbF 100 P-Channel 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 10 -3.0V 20s PULSE WIDTH TJ = 25C A 1 0.1 1 10 -3.0V 20s PULSE WIDTH TJ = 150C A 1 0.1 10 Fig 12. Typical Output Characteristics 100 -ISD , Reverse Drain Current (A) -I D , Drain-to-Source Current (A) 10 Fig 13. Typical Output Characteristics 100 TJ = 25C TJ = 150C 10 V DS = -10V 20s PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 5.5 6.0 -VGS , Gate-to-Source Voltage (V) Fig 14. Typical Transfer Characteristics 6 1 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) A TJ = 150C 10 TJ = 25C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 A 1.4 -VSD , Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage www.irf.com IRF7389PbF RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 RDS(on) , Drain-to-Source On Resistance ( ) P-Channel ID = 4.9A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 0.6 0.5 0.4 0.3 0.1 VGS = -10V 0.0 80 100 120 140 160 0 TJ , Junction Temperature ( C) 10 20 Fig 17. Typical On-Resistance Vs. Drain Current 300 0.12 I D = -4.9A 0.04 0.00 0 3 6 9 12 15 -VGS , Gate -to-Source Voltage (V) Fig 18. Typical On-Resistance Vs. Gate Voltage www.irf.com A EAS , Single Pulse Avalanche Energy (mJ) 0.16 0.08 30 -ID , Drain Current (A) Fig 16. Normalized On-Resistance Vs. Temperature RDS(on) , Drain-to-Source On Resistance ( ) V GS = -4.5V 0.2 ID -1.3A -2.2A BOTTOM -2.8A TOP 250 200 150 100 50 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) 150 Fig 19. Maximum Avalanche Energy Vs. Drain Current 7 A IRF7389PbF VGS = 0V Ciss = Cgs + Cgd + Cds Crss = Cgd 1200 20 f = 1 MHz SHORTED -VGS , Gate-to-Source Voltage (V) 1400 P-Channel C, Capacitance (pF) Coss = Cds + Cgd 1000 Ciss 800 Coss 600 Crss 400 200 0 1 10 100 A ID = -4.9A VDS =-15V 16 12 8 4 0 0 10 20 30 40 QG , Total Gate Charge (nC) - V DS , Drain-to-Source Voltage (V) Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 PDM 0.02 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com IRF7389PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A 6 8 7 6 5 1 2 3 4 H E 0.25 [.010] A e e1 8X b 0.25 [.010] A MILLIMET ERS MAX MIN .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 MAX b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC .025 BASIC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 e1 6X INCHES MIN .0532 A K x 45 C y 0.10 [.004] A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A SUBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER 100 www.irf.com 9 IRF7389PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/04 10 www.irf.com